Electron transport in nanoscale bipolar transistors

Abstract

As base widths are reduced to tens of nanometers in modern bipolar transistors, current transport becomes quasi-ballistic. Classical transport models do not capture transport at this scale. We report the development of a new one-dimensional bipolar transistor simulator - nanoBJT, to study electron transport in nanoscale transistors. The simulator incorporates a variety of carrier transport models, and solves these self-consistently with Poisson's equation. The resulting data demonstrate the limitations of the drift-diffusion and the energy transport models. Directions for future work are proposed.