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2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)最新文献

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2D Nano Materials for CMOS compatible Gas Sensors 用于CMOS兼容气体传感器的二维纳米材料
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919352
R. Jha, N. Sakhuja, N. Bhat
{"title":"2D Nano Materials for CMOS compatible Gas Sensors","authors":"R. Jha, N. Sakhuja, N. Bhat","doi":"10.1109/SBMicro.2019.8919352","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919352","url":null,"abstract":"Among the 2D materials family, the Transition Metal Dichalcogenides (TMD) offer interesting opportunities for application in chemi-resistive gas sensors. Along with high surface to volume ratio, an ideal characteristic for surface adsorption driven gas sensing phenomenon, TMDs lend themselves for wide range of tunability of other important parameters such as bandgap and conductivity. In order to build CMOS compatible gas sensors for system-on-chip applications, it is also important to develop low temperature processes for the integration of sensing materials at the back end of the CMOS line. In this context liquid exfoliation of 2D TMD materials can be exploited for room temperature synthesis of sensing material on top of CMOS platform. We present high performance gas sensors realized using few layer WS2 and MoSe22 for NH3 and H2S gases respectively.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126172266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
SBMicro 2019 Program Committee SBMicro 2019项目委员会
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/sbmicro.2019.8919267
{"title":"SBMicro 2019 Program Committee","authors":"","doi":"10.1109/sbmicro.2019.8919267","DOIUrl":"https://doi.org/10.1109/sbmicro.2019.8919267","url":null,"abstract":"","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"331 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116233104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Oriented PLDL Nanofibers 取向PLDL纳米纤维
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919299
Nayara M. S. Carvalho, M. F. Passos, M. R. W. Maciel, R. M. Filho, R. Furlan
{"title":"Oriented PLDL Nanofibers","authors":"Nayara M. S. Carvalho, M. F. Passos, M. R. W. Maciel, R. M. Filho, R. Furlan","doi":"10.1109/SBMicro.2019.8919299","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919299","url":null,"abstract":"In this work, we present novel results of poly (Lco-D, L lactic acid) (PLDL) nanofibers deposited using a nonconventional electrospinning process. It allows to obtain fibers with vertical and horizontal alignment simultaneously. Extending the deposition time, a membrane-like structure with oriented fibers can be collected that is a prospective material for biomedical applications. Fibers with a higher concentration of PLDL, dissolved in chloroform and acetone, resulted in well-formed fibers with small diameters (600 nm to 710 nm).","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122172082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Intrinsic Voltage Gain and Unit-Gain Frequency of Omega-Gate Nanowire SOI MOSFETs ω栅极纳米线SOI mosfet的固有电压增益和单位增益频率
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919278
W. Perina, J. Martino, P. Agopian
{"title":"Intrinsic Voltage Gain and Unit-Gain Frequency of Omega-Gate Nanowire SOI MOSFETs","authors":"W. Perina, J. Martino, P. Agopian","doi":"10.1109/SBMicro.2019.8919278","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919278","url":null,"abstract":"This paper shows the influence of channel width (W<inf>NW</inf>) and channel length (L) on intrinsic voltage gain (A<inf>V</inf>) and on unit-gain frequency (f<inf>t</inf>) of omega-gate nanowire SOI MOSFET. The f<inf>t</inf> is calculated taking into consideration the experimental gate capacitance. The device showed excellent electrostatic control for the W<inf>NW</inf> of 10 nm, which improved transconductance, consequently, improving both A<inf>V</inf> and f<inf>t</inf>. This technology showed values of A<inf>V</inf> around 80 dB and a f<inf>t</inf> of over 200 GHz, proving that this device is an excellent for future analog applications like 5G communications and Internet-of-Things (IoT).","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126270120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Analytical Modeling of the p-Type BESOI MOSFET at Linear Region Operation Leonard 线性区域运算Leonard下p型BESOI MOSFET的解析建模
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919440
L. Yojo, R. Rangel, K. Sasaki, J. Martino
{"title":"Analytical Modeling of the p-Type BESOI MOSFET at Linear Region Operation Leonard","authors":"L. Yojo, R. Rangel, K. Sasaki, J. Martino","doi":"10.1109/SBMicro.2019.8919440","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919440","url":null,"abstract":"The BESOI MOSFET is a reconfigurable transistor, i.e., it can work as an n-type or a p-type device due to its back enhanced operating principle. The back gate is used to induce carriers at the back interface (silicon film/buried oxide) to the low doped channel. This work aims to propose a first order model for the drain current at linear region of the p-type BESOI MOSFET based on the back and front silicon film/SiO2 interfaces conduction. The analytical expression takes into account the series resistance, that plays an important role in the BESOI MOSFET due to the low doped channel and the drain and source Schottky contacts. The comparison between simulated and modeled data showed a very good agreement for a first order modeling.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130438132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Influence of Silver nanoparticles on Tb3+ doped TeO2-ZnO glasses covered Silicon solar cell 纳米银对Tb3+掺杂TeO2-ZnO玻璃覆盖硅太阳能电池的影响
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919331
D. K. Kumada, M. S. Peixoto, L. A. Gómez-Malagón, R. Onmori, J. A. García, L. Kassab
{"title":"Influence of Silver nanoparticles on Tb3+ doped TeO2-ZnO glasses covered Silicon solar cell","authors":"D. K. Kumada, M. S. Peixoto, L. A. Gómez-Malagón, R. Onmori, J. A. García, L. Kassab","doi":"10.1109/SBMicro.2019.8919331","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919331","url":null,"abstract":"This work shows the increase of silicon solar cell efficiency due to Tb$^{3+}$ doped tellurite (TeO}2-ZnO-Na2 O-PbO) glass with silver nanoparticles used as cover layer. Due to Tb$^{3+}$ down-conversion process optimized by the plasmon resonance of the metallic nanoparticles, enhancement of $sim 4.93$% was observed when compared to the efficiency of the uncovered solar cell. The samples are prepared using the melting quenching techinique and the electrical characterization is performed using a solar simulator in order to obtain the current-voltage and power-voltage curve. As there is a mismatch between the solar spectrum and the one of the silicon solar cell, the procedure presented in this work represents an alternative to increase the number of photons that are converted from the ultraviolet region to the visible one and opens the posibility for application with new photovoltaic devices based on organic or inorganic materials.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122253001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of a simple electrical characterization platform for semiconducting organic films 一个简单的半导体有机薄膜电表征平台的设计
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919256
Cesar do Amaral, Danilo L. Li, V. Pereira, S. Blawid
{"title":"Design of a simple electrical characterization platform for semiconducting organic films","authors":"Cesar do Amaral, Danilo L. Li, V. Pereira, S. Blawid","doi":"10.1109/SBMicro.2019.8919256","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919256","url":null,"abstract":"Printed organic electronic devices are considered a key technology for enabling the Internet of Things. The development of organic electronics is fueled by new materials, which allow the printing of thin films on flexible substrates at low cost. Green materials are preferable, which are recyclable or biodegradable and are based on environment-friendly, noncorrosive and abundant chemical precursors processed at low temperature without toxic waste. Especially for countries with large biodiversity, like Brazil, the screening of natural materials is a viable strategy to discover suitable prototype materials that may be further developed. We report here on the design of a simple electrical characterization platform able to distinguish between conducting, semiconducting and insulating behavior. In an exemplary case study we show that curcumin, a natural dye, resembles an insulator.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134420744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of substrate bias on the mobility of n-type ɷ-gate SOI nanowire MOSFETs 衬底偏压对n型<s:1>栅极SOI纳米线mosfet迁移率的影响
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919463
F. Bergamaschi, S. Barraud, M. Cassé, M. Vinet, O. Faynot, B. C. Paz, M. Pavanello
{"title":"Impact of substrate bias on the mobility of n-type ɷ-gate SOI nanowire MOSFETs","authors":"F. Bergamaschi, S. Barraud, M. Cassé, M. Vinet, O. Faynot, B. C. Paz, M. Pavanello","doi":"10.1109/SBMicro.2019.8919463","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919463","url":null,"abstract":"This work presents the impact of substrate bias on the mobility of high-$mathbf kappa$/metal gate n-type $Omega$-gate SOI nanowire MOS transistors. The analysis is performed through experimental measurements and tridimensional numerical simulations. Mobility and its degradation coefficients are extracted using the Y-function method. The results showed that back bias increase has a beneficial effect on mobility for negative voltages and up to 10V, due to reduction in surface roughness scattering. But for higher back bias levels, mobility starts undergoing severe degradation. Simulations show that strong positive back bias drags the inversion layer down to the second interface, where mobility is shown to be lower.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130871081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Comparasion between TiO2 thin films deposited by DC and RF sputtering. 直流和射频溅射制备TiO2薄膜的比较。
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919318
R. Cesar, A. Pascon, J. A. Diniz, E. Joanni, M. Mederos, R. Texeira
{"title":"Comparasion between TiO2 thin films deposited by DC and RF sputtering.","authors":"R. Cesar, A. Pascon, J. A. Diniz, E. Joanni, M. Mederos, R. Texeira","doi":"10.1109/SBMicro.2019.8919318","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919318","url":null,"abstract":"This paper compares titanium oxide (TiO2) thin films deposited by RF and DC sputtering. Structural characterization was used to investigate the morphology of TiO2 thin films. Both films show the rutile and anatase crystal structure; ellipsometry show thickness and refractive index of 50 nm and 2.43 for the TiO2 deposited by DC sputtering and 40 nm and 2.32 for the film by RF sputtering; AFM shows the roots mean square (RMS) roughness of 6.5 nm and 8 nm for TiO2 deposited by DC and RF sputtering, respectively. For electrical characterization was developed MOS capacitor; from them was possible to determine which method forms the best dielectric film, defined by high dielectric constant value (high-k), lower charge density (Q0/q) and flat-band voltage (VFB) around -0.9V. Therefore, the best method to deposit TiO2 is DC reactive sputtering; because this method showed a better electrical conditions and a well-defined crystalline structure","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114417462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical characterization of bulk heterojunction organic solar cells using PAni:PSS Layer-by-Layer films 用聚苯胺:聚硫醚层膜研究体异质结有机太阳能电池的电学特性
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919283
G. Santos, G. S. Braga, I. Cambauva, F. Fonseca
{"title":"Electrical characterization of bulk heterojunction organic solar cells using PAni:PSS Layer-by-Layer films","authors":"G. Santos, G. S. Braga, I. Cambauva, F. Fonseca","doi":"10.1109/SBMicro.2019.8919283","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919283","url":null,"abstract":"Herein we report the evaluation of a PAni:PSS Layer-by-Layer (LbL) ultrathin film as hole transport layer (HTL) of Bulk Heterojunction Organic Solar Cells (OSC). It was also highlighted the importance of using a lithium fluorite (LiF) dielectric layer to improve devices overall performance. The best result was found for devices comprising five PAni:PSS bilayers and a LiF dielectric layer in a thin film structure. There is a perspective of increasing device’s efficiency based on LbL materials used as HTL and their deposition parameters.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116001554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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