2D Nano Materials for CMOS compatible Gas Sensors

Abstract

Among the 2D materials family, the Transition Metal Dichalcogenides (TMD) offer interesting opportunities for application in chemi-resistive gas sensors. Along with high surface to volume ratio, an ideal characteristic for surface adsorption driven gas sensing phenomenon, TMDs lend themselves for wide range of tunability of other important parameters such as bandgap and conductivity. In order to build CMOS compatible gas sensors for system-on-chip applications, it is also important to develop low temperature processes for the integration of sensing materials at the back end of the CMOS line. In this context liquid exfoliation of 2D TMD materials can be exploited for room temperature synthesis of sensing material on top of CMOS platform. We present high performance gas sensors realized using few layer WS2 and MoSe22 for NH3 and H2S gases respectively.