发布求助
文献互助 智能选刊 最新文献

2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)最新文献

筛选
英文 中文
Miniaturized Gas Sensor Platform for Selective Vapors Detection at Room Temperature 用于室温下选择性蒸汽检测的小型气体传感器平台
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919257
H. Peres, E. Galeazzo, M. Dantas, M. Sparvoli, Francislei S. A. Santos, M. P. H. Falla
{"title":"Miniaturized Gas Sensor Platform for Selective Vapors Detection at Room Temperature","authors":"H. Peres, E. Galeazzo, M. Dantas, M. Sparvoli, Francislei S. A. Santos, M. P. H. Falla","doi":"10.1109/SBMicro.2019.8919257","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919257","url":null,"abstract":"Gas sensors are usually made of metallic oxides and need to operate at relatively high temperatures (about hundreds of Celsius degrees). Besides, they generally present drawbacks: low selectivity, elevated response time, and degradation. Novel nanostructured materials such as carbon nanotubes and graphene, among others, have been proposed to overcome these problems due to their unique electronic properties. However, these materials also present low selectivity for many gas species. In order to take advantage of the benefits of using carbon materials for gas sensing at room temperature, this work presents a proposal of humidity and volatile organic compounds (VOCs) sensing based on a miniaturized platform composed of four sensors. The lack of selectivity of individual materials is compensated by crossing the responses of each sensor. Results showed very fast response and recovery times (just few seconds), as well as good sensitivity (response variation up to four orders of magnitude). With this approach, the selectivity to discriminate the vapors can be improved, since each substance has an individual response pattern in the gas sensor array.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128667559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transition Energy Calculations of Type II In(As)P/InGaP Quantum Dots for Intermediate Band Solar Cells 中波段太阳能电池II型In(As)P/InGaP量子点的跃迁能量计算
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919441
B. V. Rocha, R. Jakomin, R. Kawabata, L. Dornelas, M. Pires, P. L. Souza
{"title":"Transition Energy Calculations of Type II In(As)P/InGaP Quantum Dots for Intermediate Band Solar Cells","authors":"B. V. Rocha, R. Jakomin, R. Kawabata, L. Dornelas, M. Pires, P. L. Souza","doi":"10.1109/SBMicro.2019.8919441","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919441","url":null,"abstract":"In this work, we perform computational simulations of InAsP type II quantum dots for an intermediate band solar cell. We have varied parameters such as height, width and percentage of P of the quantum dots alloy to determine their influence on the optical transitionsˋ energies and electronic confinement within the quantum dots.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121727947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Bifacial Tandem Solar Panels with MOS Cells on the Backside for Applications in Deserts 背面MOS电池的双面串联太阳能电池板在沙漠中的应用
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919381
F. L. N. Santos, M. Watanabe, William Chiappim Júnior, S. G. S. Filho, J. Martino
{"title":"Bifacial Tandem Solar Panels with MOS Cells on the Backside for Applications in Deserts","authors":"F. L. N. Santos, M. Watanabe, William Chiappim Júnior, S. G. S. Filho, J. Martino","doi":"10.1109/SBMicro.2019.8919381","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919381","url":null,"abstract":"This work proposes bifacial tandem solar panels with MOS cells on the backside aiming at applications in deserts. MOS solar cells were fabricated using Al(200nm)/ Mg(30nm)/SiO2 (1.73nm)/Si-p structures. The gate oxide was grown by rapid thermal processing (RTP) and the main parameters studied were extracted by means of electric characterization through IxV curves of the MOS solar cells. For the operation temperature of the MOS cell varying from 25°C to 70°C, it was shown that the loss of the conversion efficiency ($eta$) was at least 25% lower compared to conventional solar modules based on PN junctions and multi-crystalline-Si [9, 12]. As a result, the use of MOS solar cell on the backside of two different generations of CdS_CdTe cells with different conversion efficiencies at 25° C (15.8% and 21.0%), operating at the typical temperature of 70°C in deserts, promotes the increase of the conversion efficiency of 10.0% for CdS_CdTe1 (15.8%) and 6.0% for CdS_CdTe2 (21.0%).","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125174772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Correlation Between the Electric Field and the Negative Temperature Bias Instabilities Degradation in Junctionless Nanowire Transistors 电场与无结纳米线晶体管负温偏稳定性退化的关系
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919273
N. Graziano, F. J. da Costa, R. Trevisoli, R. Doria
{"title":"Correlation Between the Electric Field and the Negative Temperature Bias Instabilities Degradation in Junctionless Nanowire Transistors","authors":"N. Graziano, F. J. da Costa, R. Trevisoli, R. Doria","doi":"10.1109/SBMicro.2019.8919273","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919273","url":null,"abstract":"In this work, we have correlated the degradation by Negative Bias Temperature Instability (NBTI) in MOS Junctionless Nanowire Transistors (JNTs) to the electric field inside the devices. We have measured samples with doping concentrations of $1times 10^{19} cm^{-3}$, biased at two different drain voltages, with several channel lengths (L) and widths (W). To extend the analysis, aiming at the understanding the physical behavior of the devices, we performed simulations of NBTI considering devices with similar characteristics. As a result, a higher degradation by the NBTI effect was obtained for the JNTs with lower doping concentration and shorter channel. The behavior of the NBTI has been correlated to the electric field of the devices and it is shown that the electric field becomes important mainly in accumulation regime.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125175268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thin film conductive composites based on graphite nanoplatelets for heating applications 加热用石墨纳米片薄膜导电复合材料
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919307
S. Nista, J. Tsukamoto, S. Moshkalev
{"title":"Thin film conductive composites based on graphite nanoplatelets for heating applications","authors":"S. Nista, J. Tsukamoto, S. Moshkalev","doi":"10.1109/SBMicro.2019.8919307","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919307","url":null,"abstract":"The studies of graphene and nanographite in the in different forms during last decade open ways for practical applications of these materials. Here we report the first results of experiments aiming at development of composites consisting of nanographite powders and polymeric matrixes showing the possibility to fabricate low-cost flexible conducive composites based on highly abundant natural products with variety of potential applications in particular for flexible heaters.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"33 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132785390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector 亚单层量子点红外探测器中量子约束各向异性的研究
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919349
A. Alzeidan, T. Cantalice, Ailton Garcia, C. Deneke, A. Quivy
{"title":"Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector","authors":"A. Alzeidan, T. Cantalice, Ailton Garcia, C. Deneke, A. Quivy","doi":"10.1109/SBMicro.2019.8919349","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919349","url":null,"abstract":"A submonolayer quantum dot infrared photodetector (SML-QDIP) was grown on a GaAs(001) substrate by molecular beam epitaxy and processed using conventional optical lithography, wet etching and electronbeam metallization. Additionally, a side of the device was polished at 45 degrees in order to allow optical measurements with s- and p-polarized light. The electro-optical properties of the device were investigated both in normal incidence and at 45 degrees in order to study the quantum confinement of the SMLQD along the lateral and vertical directions. The s-to-p photocurrent ratio was found to be between 0.10 and 0.43, showing that, in this new type of quantum dot, the lateral confinement is still weaker than along the vertical direction, but is better than the one of conventional QDs fabricated in the Stranski-Krastanov growth mode. The maximum specific detectivity in normal incidence was $1.3 times 10^{11}$ cm Hz1/2/W at 30 K and 0.9V.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124728055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
2D Nano Materials for CMOS compatible Gas Sensors 用于CMOS兼容气体传感器的二维纳米材料
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919352
R. Jha, N. Sakhuja, N. Bhat
{"title":"2D Nano Materials for CMOS compatible Gas Sensors","authors":"R. Jha, N. Sakhuja, N. Bhat","doi":"10.1109/SBMicro.2019.8919352","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919352","url":null,"abstract":"Among the 2D materials family, the Transition Metal Dichalcogenides (TMD) offer interesting opportunities for application in chemi-resistive gas sensors. Along with high surface to volume ratio, an ideal characteristic for surface adsorption driven gas sensing phenomenon, TMDs lend themselves for wide range of tunability of other important parameters such as bandgap and conductivity. In order to build CMOS compatible gas sensors for system-on-chip applications, it is also important to develop low temperature processes for the integration of sensing materials at the back end of the CMOS line. In this context liquid exfoliation of 2D TMD materials can be exploited for room temperature synthesis of sensing material on top of CMOS platform. We present high performance gas sensors realized using few layer WS2 and MoSe22 for NH3 and H2S gases respectively.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126172266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
SBMicro 2019 Author's Index SBMicro 2019作者索引
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/sbmicro.2019.8919447
{"title":"SBMicro 2019 Author's Index","authors":"","doi":"10.1109/sbmicro.2019.8919447","DOIUrl":"https://doi.org/10.1109/sbmicro.2019.8919447","url":null,"abstract":"The SBMicro symposium is an international forum dedicated to fabrication and modeling of microsystems, integrated circuits and devices, held annually in Brazil. The goal of the symposium is to bring together researchers in the areas of processing, materials, characterization, modeling and TCAD of integrated circuits, microsensors, microactuators and MEMS. The SBMicro2019 will be located in São Paulo, the economic center and most important metropolis in Brazil. This international conference offers a unique blend of microelectronics and serves as a major conference for the discussion of interdisciplinary research around the world through a variety of formats, such as oral presentations, poster sessions, exhibits, panel discussions, and tutorial sessions. All approved papers will be published at the IEEEXplore. The best papers presented at the symposium will be invited to resubmit an extended version that will be considered for publication at the JICS – Journal of Integrated Circuits and Systems.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"122 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131487238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microelectronics at the heart of the digital society: technological and training challenges 微电子在数字社会的核心:技术和培训的挑战
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919405
O. Bonnaud, L. Fesquet
{"title":"Microelectronics at the heart of the digital society: technological and training challenges","authors":"O. Bonnaud, L. Fesquet","doi":"10.1109/SBMicro.2019.8919405","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919405","url":null,"abstract":"The desire to develop the all-digital society at the global level implies the development of connected objects and the Internet of Things at a large scale. These objects require a physical implementation based on microelectronic devices, circuits and systems. The exponential growth of these objects leads to major needs in all the microelectronic sectors, in terms of basic devices, circuits and systems, which require today to be energy efficient. Many challenges are emerging for designing new low-power techniques that ensure quality, reliability and security. This paper deals on the one hand with the presentation of the context, limitations and potential solutions, and on the other hand with the need for skills that must be taught by adapting the training of specialists to the most advanced technologies.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134282756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Analysis and measurement of the non-linear refractive index of SiOx Ny using pedestal waveguides 基于基座波导的SiOx - Ny非线性折射率分析与测量
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919392
Julián H. Sierra, D. O. Carvalho, R. Samad, R. Rangel, M. I. Alayo
{"title":"Analysis and measurement of the non-linear refractive index of SiOx Ny using pedestal waveguides","authors":"Julián H. Sierra, D. O. Carvalho, R. Samad, R. Rangel, M. I. Alayo","doi":"10.1109/SBMicro.2019.8919392","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919392","url":null,"abstract":"In this work, the non-linear refractive index (n2) of silicon oxynitride (SiOx Ny) is determined, obtaining a value for this material of n2 = 2.11×10-19 m2/W. The results demonstrate that this material has interesting properties for the development of non-linear optical devices. The paper presents in detail the waveguide fabrication process using the pedestal technique, which allows using different materials since it does not require etching to define the sidewalls of the waveguides. We show the results of the measurement of the n2 employing the non-linear optical phenomena of Self-Phase Modulation (SPM).","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133323145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信