中波段太阳能电池II型In(As)P/InGaP量子点的跃迁能量计算

2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI:10.1109/SBMicro.2019.8919441

B. V. Rocha, R. Jakomin, R. Kawabata, L. Dornelas, M. Pires, P. L. Souza

{"title":"中波段太阳能电池II型In(As)P/InGaP量子点的跃迁能量计算","authors":"B. V. Rocha, R. Jakomin, R. Kawabata, L. Dornelas, M. Pires, P. L. Souza","doi":"10.1109/SBMicro.2019.8919441","DOIUrl":null,"url":null,"abstract":"In this work, we perform computational simulations of InAsP type II quantum dots for an intermediate band solar cell. We have varied parameters such as height, width and percentage of P of the quantum dots alloy to determine their influence on the optical transitionsˋ energies and electronic confinement within the quantum dots.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Transition Energy Calculations of Type II In(As)P/InGaP Quantum Dots for Intermediate Band Solar Cells\",\"authors\":\"B. V. Rocha, R. Jakomin, R. Kawabata, L. Dornelas, M. Pires, P. L. Souza\",\"doi\":\"10.1109/SBMicro.2019.8919441\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we perform computational simulations of InAsP type II quantum dots for an intermediate band solar cell. We have varied parameters such as height, width and percentage of P of the quantum dots alloy to determine their influence on the optical transitionsˋ energies and electronic confinement within the quantum dots.\",\"PeriodicalId\":403446,\"journal\":{\"name\":\"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMicro.2019.8919441\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMicro.2019.8919441","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在这项工作中，我们对中间波段太阳能电池的InAsP II型量子点进行了计算模拟。我们采用不同的参数，如量子点合金的高度、宽度和P的百分比，来确定它们对量子点内的光学跃迁、能量和电子约束的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Transition Energy Calculations of Type II In(As)P/InGaP Quantum Dots for Intermediate Band Solar Cells

In this work, we perform computational simulations of InAsP type II quantum dots for an intermediate band solar cell. We have varied parameters such as height, width and percentage of P of the quantum dots alloy to determine their influence on the optical transitionsˋ energies and electronic confinement within the quantum dots.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)

自引率

0.00%

发文量