2016 IEEE Students’ Technology Symposium (TechSym)最新文献_第5页

Detection of organic vapours employing droplets having nanoparticles 利用含有纳米颗粒的液滴检测有机蒸气

2016 IEEE Students’ Technology Symposium (TechSym) Pub Date : 2016-09-01 DOI: 10.1109/TECHSYM.2016.7872665

M. Bhattacharjee, Viswanath Pasumarthi, Joydip Chaudhuri, A. K. Singh, H. Nemade, D. Bandyopadhyay

{"title":"Detection of organic vapours employing droplets having nanoparticles","authors":"M. Bhattacharjee, Viswanath Pasumarthi, Joydip Chaudhuri, A. K. Singh, H. Nemade, D. Bandyopadhyay","doi":"10.1109/TECHSYM.2016.7872665","DOIUrl":"https://doi.org/10.1109/TECHSYM.2016.7872665","url":null,"abstract":"In this paper, a droplet based organic vapour detection technique is discussed. The detection was based on solutal Marangoni effect where a strong circulation of fluid was observed inside a droplet once an organic vapour source was introduced near the vicinity of the droplet surface. The reason behind the rotational motion was the surface tension gradient created on the air-droplet and vapour-droplet interfaces. Different organic vapours produced rotational motion of different magnitudes inside the droplet based on the surface tension gradient created on air-droplet and vapour-droplet interfaces. In order to electrically detect the motion, a nanoparticle laden salt solution droplet was placed in between two copper electrodes and the electrodes were further connected to a digital multimeter for measuring the electrical resistance across the droplet. It was observed that there was a change in resistance when the droplet was set in motion by introducing an organic vapour source. A ∼95% change in resistance was observed due to the flow circulation. It was also observed that the magnitude of change in resistance was different for different organic vapours. Thus, the system had the capability of being used as organic vapour sensor. A computational study was also performed in order to explain the phenomenon and to illustrate the effect of contact angle of the droplet.","PeriodicalId":403350,"journal":{"name":"2016 IEEE Students’ Technology Symposium (TechSym)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128259391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A comparative study on phonological feature detection from continuous speech with respect to variable corpus size 不同语料库规模下连续语音语音特征检测的比较研究

2016 IEEE Students’ Technology Symposium (TechSym) Pub Date : 2016-09-01 DOI: 10.1109/TECHSYM.2016.7872702

Tanmay Bhowmik, Krishna Dulal Dalapati, Shyamal Kumar Das Mandal

{"title":"A comparative study on phonological feature detection from continuous speech with respect to variable corpus size","authors":"Tanmay Bhowmik, Krishna Dulal Dalapati, Shyamal Kumar Das Mandal","doi":"10.1109/TECHSYM.2016.7872702","DOIUrl":"https://doi.org/10.1109/TECHSYM.2016.7872702","url":null,"abstract":"In this paper, place and manner of articulation based phonological features have been successfully identified with high accuracy using very minimal amount of training data. In detection-based, bottom-up speech recognition approach, the phonological feature based acoustic-phonetic speech attributes are considered as a key component. After identifying the features, they are merged together to get the phonemes. So this type of feature detection using low corpus size shows a path with which continuous speech can be recognized using inadequate data repository also. To execute the experiment, both the language, Bengali and English have been considered. The sentences were trained using deep neural network. Training procedure is carried out for Bengali using three different corpus sizes with a number of 100, 200, and 500 sentences. The average frame level accuracies were obtained as 87.88%, 88.43% and 88.96% respectively for CDAC speech corpus. Whereas using the same training procedure for TIMIT corpus, the accuracies were 87.97%, 88.84%, and 89.39% respectively. So the average frame level accuracy is almost same irrespective of number of training data. This ensures, in case of small speech corpora, phonological feature based speech attributes can be detected with the bottom-up approach.","PeriodicalId":403350,"journal":{"name":"2016 IEEE Students’ Technology Symposium (TechSym)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130940718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Robust face recognition of inferior quality images using Local Gabor Phase Quantization 基于局部Gabor相位量化的劣质图像鲁棒人脸识别

2016 IEEE Students’ Technology Symposium (TechSym) Pub Date : 2016-09-01 DOI: 10.1109/TECHSYM.2016.7872699

Shubhobrata Bhattacharya, A. Dasgupta, A. Routray

引用次数: 6

Dynamic trajectory planning for mobile robot intercepting a moving target using Bezier curve 基于Bezier曲线的移动机器人拦截运动目标的动态轨迹规划

2016 IEEE Students’ Technology Symposium (TechSym) Pub Date : 2016-09-01 DOI: 10.1109/TECHSYM.2016.7872704

Vaibhav Deshmukh, K. Deshmukh, S. Patil

引用次数: 3

Implementation of double-gate junctionless transistor and its circuit performance analysis 双栅无结晶体管的实现及其电路性能分析

2016 IEEE Students’ Technology Symposium (TechSym) Pub Date : 2016-09-01 DOI: 10.1109/TECHSYM.2016.7872696

R. K. Joshi, T. Arjun, S. Ahish, D. Sharma, M. H. Vasantha, Y. B. N. Kumar

{"title":"Implementation of double-gate junctionless transistor and its circuit performance analysis","authors":"R. K. Joshi, T. Arjun, S. Ahish, D. Sharma, M. H. Vasantha, Y. B. N. Kumar","doi":"10.1109/TECHSYM.2016.7872696","DOIUrl":"https://doi.org/10.1109/TECHSYM.2016.7872696","url":null,"abstract":"In this paper, the utility of double-gate (DG) junctionless (JL) transistor in attaining better DC and analog/RF performances are demonstrated. The analysis is done by extracting drain current versus gate voltage characteristics, transconductance (gm), transconductance generation efficiency (gm/Ids), gate-to-gate capacitance (Cgg), ratio of gate-to-source capacitance (Cgs) to gate-to-drain capacitance (Cgd). Sensitivity analysis show that, JL transistors prove to be less sensitive to channel (gate) length variation as short-channel effect is amply controlled. It is also seen that ON-state current remains almost constant with increase in temperature. At a particular drain current (Ids) JL transistors achieve higher values of unity-gain cut-off frequency (fT) and gain bandwidth (GBW) product for ultra low power operation. Furthermore, mixed-mode circuit simulations have been performed by implementing Inverter circuit and a Common Source (CS) amplifier circuit using DG JL transistor. The inverter shows better noise margin for the given supply voltage. The CS amplifier gain increases with increase in RL. Maximum gain of 18 dB is obtained for RL= 15 KΩ with a 3-dB cut-off frequency of 0.955 THz. The results of these simulations give insights into the circuit level behaviour of JL transistor which can be used as a future device owing to its characteristics.","PeriodicalId":403350,"journal":{"name":"2016 IEEE Students’ Technology Symposium (TechSym)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131421802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A segmented color plane histogram based feature extraction scheme for automatic bleeding detection in wireless capsule endoscopy 基于彩色平面直方图分割的无线胶囊内窥镜出血自动检测方法

2016 IEEE Students’ Technology Symposium (TechSym) Pub Date : 2016-09-01 DOI: 10.1109/TECHSYM.2016.7872690

A. Kundu, Mamshad Nayeem Rizve, T. Ghosh, S. Fattah

{"title":"A segmented color plane histogram based feature extraction scheme for automatic bleeding detection in wireless capsule endoscopy","authors":"A. Kundu, Mamshad Nayeem Rizve, T. Ghosh, S. Fattah","doi":"10.1109/TECHSYM.2016.7872690","DOIUrl":"https://doi.org/10.1109/TECHSYM.2016.7872690","url":null,"abstract":"Wireless capsule endoscopy (WCE) is a recently developed revolutionary video technology to visually inspect the entire gastrointestinal tract in a non-invasive way. However, a major problem associated with this technology is that to detect bleeding, a physician has to analyze the tremendous amount of image frames, which is both time consuming and due to oversight often leads to human error. These limitations give motivation for development of computer aided automatic bleeding detection schemes. In this paper, to investigate bleeding, the analysis of WCE image frames is carried out in normalized RGB (rgb) color space as human perception of bleeding is associated with different shades of red and rgb overcomes some of the drawbacks of conventional RGB color space. In the proposed method, at first, the WCE image frame is segmented based on different ranges of r-values. Then for a certain level of r-value, the variation in g plane is presented with the help of histogram. Features are extracted from the proposed r versus g plane histograms. For the purpose of classification, KNN classifier is employed. Extensive experimentation on several WCE image frames obtained from various publicly available WCE videos makes it evident that the proposed method outperforms some of the existing methods in terms of accuracy (98.12%), sensitivity (94.98%) and specificity (98.55%).","PeriodicalId":403350,"journal":{"name":"2016 IEEE Students’ Technology Symposium (TechSym)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123285750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Performance analysis of a novel hetero-junction tunnel FET based SRAM at 0.3V supply voltage 一种新型异质结隧道场效应管SRAM在0.3V供电电压下的性能分析

2016 IEEE Students’ Technology Symposium (TechSym) Pub Date : 2016-09-01 DOI: 10.1109/TECHSYM.2016.7872686

Mohd Kashif Zia Ansari, S. Ahish, D. Sharma, M. H. Vasantha, Y. B. N. Kumar

{"title":"Performance analysis of a novel hetero-junction tunnel FET based SRAM at 0.3V supply voltage","authors":"Mohd Kashif Zia Ansari, S. Ahish, D. Sharma, M. H. Vasantha, Y. B. N. Kumar","doi":"10.1109/TECHSYM.2016.7872686","DOIUrl":"https://doi.org/10.1109/TECHSYM.2016.7872686","url":null,"abstract":"In this paper, the stability/performance of the conventional SRAM cell architectures have been demonstrated using a novel hetero-junction double gate tunnel FET (H-DGTFET) device at 15 nm technology node. This device has improved ON-current (ION) because of the decrease in width of the depletion region due to a highly doped layer placed in the channel near the source-channel junction. It results in an improved ION /IOFF ratio, consuming significantly less amount of static power. The conventional 6T and 8T SRAM architectures have been implemented using this novel H-DGTFET operating at low supply voltage of 0.3 V. The performance of the 6T and 8T SRAM cells have been analyzed in terms of hold, read & write SNMs and total average power consumption. The read SNM for 6T and 8T SRAM cells have been found to be 54 mV and 69 mV respectively; hold and write SNM for 6T are 90 mV and 103 mV respectively. Total average power consumption for 6T and 8T SRAM cells are 2.13 μW and 2.68 μW respectively in one cycle consisting of two reads and one write “0”/write “1” operations.","PeriodicalId":403350,"journal":{"name":"2016 IEEE Students’ Technology Symposium (TechSym)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115852061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sustainable electrical energy generation technique in shallow water channels 浅水通道可持续发电技术

2016 IEEE Students’ Technology Symposium (TechSym) Pub Date : 2016-09-01 DOI: 10.1109/TECHSYM.2016.7872672

B. Mukherjee, Subhasish Das, A. Mazumdar

引用次数: 5

Elimination of static hazard in 2:1 multiplexer using quantum dot cellular automata 利用量子点元胞自动机消除2:1多路复用器中的静电危害

2016 IEEE Students’ Technology Symposium (TechSym) Pub Date : 2016-09-01 DOI: 10.1109/TECHSYM.2016.7872687

Angshuman Khan, Sikta Mandal

引用次数: 3

Cascaded sliding mode control for position control of a ball in a ball and plate system 用于球板系统中球位置控制的级联滑模控制

2016 IEEE Students’ Technology Symposium (TechSym) Pub Date : 2016-09-01 DOI: 10.1109/TECHSYM.2016.7872659

P. Roy, Soumitra Acharjee, A. Ram, Arindam Das, Tanmoy Sen, B. K. Roy

引用次数: 5