{"title":"Testing of the 2.4 GHz Band Spread Spectrum Sound Transceiver Unit Using an Elastic Type SAW Convolver","authors":"S. Kato, Kazuhiko Yamanouch, H. Ide","doi":"10.1109/ARFTG.1995.327137","DOIUrl":"https://doi.org/10.1109/ARFTG.1995.327137","url":null,"abstract":"The spread-spectrum communication method was developed for military communications during World War II. It is favored mostly for its resistance to interference and keeping signal security. When a signal is spread with a coded \"key\", redundant information is transmitted with lower power throughout a given RF band. Since interference occurs at very specific frequencies, it is difficult for it to disrupt the signal at each frequency within the band. Because of these characteristics the method has been used widely ranging from commercial to military applications such as an automobile navigation system (with using GPS), a LAN system, a sound system, and the space shuttle communication.","PeriodicalId":403073,"journal":{"name":"46th ARFTG Conference Digest","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123866214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Driver, M. de Baca, M. Golio, D. Halchin, W. Knappenberger
{"title":"On Wafer RF Testing Characterizes Current SAG on GaAs MESFETs","authors":"T. Driver, M. de Baca, M. Golio, D. Halchin, W. Knappenberger","doi":"10.1109/ARFTG.1995.327132","DOIUrl":"https://doi.org/10.1109/ARFTG.1995.327132","url":null,"abstract":"A relatively simple measurement technique aids in MESFET characterization of the phenomena known as current sag. Current sag is described as a decrease in the net DC drain current when low to medium RF power is applied. These on-wafer measurements are taken on an ATN active load pull system. The output impedance can be swept from a short to an open along the real axis of the Smith chart to understand the relationship between load line and current sag.","PeriodicalId":403073,"journal":{"name":"46th ARFTG Conference Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133066231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Impedance Matching Probes for Wireless Applications","authors":"S. Basu, M. Fennelly, J. Pence, E. Strid","doi":"10.1109/ARFTG.1995.327136","DOIUrl":"https://doi.org/10.1109/ARFTG.1995.327136","url":null,"abstract":"This work describes the motivation, technology, design, and performance of impedance matching probes that address the needs of wireless applications. The impedance matching solution can be implemented in two distinctly different technologies, air-coplanar and thin-film membrane. Impedance matched probes offer improved load-pull characterization of power, gain and efficiency, and accurate characterization of devices with non-standard impedances.","PeriodicalId":403073,"journal":{"name":"46th ARFTG Conference Digest","volume":"13 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125762137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Two-Tier Multiline TRL for Calibration of Low-Cost Network Analyzers","authors":"J. Jargon, R. Marks","doi":"10.1109/ARFTG.1995.327126","DOIUrl":"https://doi.org/10.1109/ARFTG.1995.327126","url":null,"abstract":"We compare calibrations for use on three-sampler vector network analyzers (VNAs), which do not allow the direct application of some advanced error-correction schemes such as TRL (thru-reflect-line). Here we compare various alternatives, including an approximate version of TRL that has been introduced commercially and two-tier multiline TRL using external software. We consider both coaxial and coplanar open-short-load -thru (OSLT) calibrations for the first tier, showing that the latter can lead to inaccuracies. Finally, we investigate the stability of the load reflection terms to show that the first tier calibration need not be frequently repeated.","PeriodicalId":403073,"journal":{"name":"46th ARFTG Conference Digest","volume":" 99","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120834673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Load-Pull Characterization and Modeling of Chip and Plastic Packaged HBT'S for PCS Amplifier Applications","authors":"G. Henderson, Der-woei Wu","doi":"10.1109/ARFTG.1995.327131","DOIUrl":"https://doi.org/10.1109/ARFTG.1995.327131","url":null,"abstract":"GaAs HBT’s are excellent candidates for PCS power amplifier applications which require a single low-voltage supply with good efficiency and linearity [l]. This paper describes the characterization and modeling of M/A-COM’s chip and plastic-packaged HBT for linear power amplifier applications at 1.88GHz. This analysis includes (1) a discussion of the device and package characteristics required for PCS amplifier applications (2) a complete load-pull characterization for power, efficiency, and linearity (3) a discussion of how these contours can be used to identify optimum matching conditions for linear amplifier design, and (4) the development and demonstration of a complete large-signal chip and packaged device model that accurately predicts the measured power, efficiency, and linearity. Through this analysis it is shown that for the GaAs HBT a significant improvement can be achieved in amplifier linearity by trading the device gain for linearity through an appropriate output termination.","PeriodicalId":403073,"journal":{"name":"46th ARFTG Conference Digest","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129731134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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