晶圆上射频测试表征GaAs mesfet的电流SAG

46th ARFTG Conference Digest Pub Date : 1995-11-01 DOI:10.1109/ARFTG.1995.327132

T. Driver, M. de Baca, M. Golio, D. Halchin, W. Knappenberger

{"title":"晶圆上射频测试表征GaAs mesfet的电流SAG","authors":"T. Driver, M. de Baca, M. Golio, D. Halchin, W. Knappenberger","doi":"10.1109/ARFTG.1995.327132","DOIUrl":null,"url":null,"abstract":"A relatively simple measurement technique aids in MESFET characterization of the phenomena known as current sag. Current sag is described as a decrease in the net DC drain current when low to medium RF power is applied. These on-wafer measurements are taken on an ATN active load pull system. The output impedance can be swept from a short to an open along the real axis of the Smith chart to understand the relationship between load line and current sag.","PeriodicalId":403073,"journal":{"name":"46th ARFTG Conference Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"On Wafer RF Testing Characterizes Current SAG on GaAs MESFETs\",\"authors\":\"T. Driver, M. de Baca, M. Golio, D. Halchin, W. Knappenberger\",\"doi\":\"10.1109/ARFTG.1995.327132\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A relatively simple measurement technique aids in MESFET characterization of the phenomena known as current sag. Current sag is described as a decrease in the net DC drain current when low to medium RF power is applied. These on-wafer measurements are taken on an ATN active load pull system. The output impedance can be swept from a short to an open along the real axis of the Smith chart to understand the relationship between load line and current sag.\",\"PeriodicalId\":403073,\"journal\":{\"name\":\"46th ARFTG Conference Digest\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"46th ARFTG Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTG.1995.327132\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"46th ARFTG Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.1995.327132","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

一种相对简单的测量技术有助于MESFET表征电流凹陷现象。电流凹陷被描述为低至中等射频功率施加时净直流漏极电流的减少。这些测量是在ATN主动负载牵引系统上进行的。输出阻抗可以沿着史密斯图的实轴从短路扫至开路，以了解负载线与电流凹陷之间的关系。

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On Wafer RF Testing Characterizes Current SAG on GaAs MESFETs

A relatively simple measurement technique aids in MESFET characterization of the phenomena known as current sag. Current sag is described as a decrease in the net DC drain current when low to medium RF power is applied. These on-wafer measurements are taken on an ATN active load pull system. The output impedance can be swept from a short to an open along the real axis of the Smith chart to understand the relationship between load line and current sag.

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来源期刊

46th ARFTG Conference Digest

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