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Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices最新文献

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Epitaxial Growth of Doped HfO2 Ferroelectric Materials 掺杂HfO2铁电材料的外延生长
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00004-8
Takao Shimizu, H. Funakubo
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引用次数: 1
Pyroelectric and Electrocaloric Effects and Their Applications 热释电和热电效应及其应用
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00013-9
M. Park, Michael J. Hoffmann, C. Hwang
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引用次数: 2
Ferroelectric Tunnel Junction 铁电隧道结
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00021-8
S. Fujii, M. Saitoh
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引用次数: 3
Ferroelectric Films by Physical Vapor Deposition and Ion Implantation 物理气相沉积和离子注入的铁电薄膜
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00009-7
A. Toriumi, L. Xu, S. Shibayama, S. Migita
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引用次数: 1
Antiferroelectric One Transistor/One Capacitor Memory Cell 反铁电单晶体管/单电容存储电池
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/b978-0-08-102430-0.00020-6
M. Pešić, U. Schroeder
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引用次数: 0
Ferroelectric Devices for Logic in Memory 存储器中逻辑用铁电器件
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00024-3
E. Breyer, S. Slesazeck
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引用次数: 4
Modeling of Field Cycling Behavior of Ferroelectric Hafnia-Based Capacitors 铁电hafnia电容器场循环行为的建模
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00018-8
M. Pešić, L. Larcher
{"title":"Modeling of Field Cycling Behavior of Ferroelectric Hafnia-Based Capacitors","authors":"M. Pešić, L. Larcher","doi":"10.1016/B978-0-08-102430-0.00018-8","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00018-8","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124718171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ferroelectric One Transistor/One Capacitor Memory Cell 铁电单晶体管/单电容存储单元
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00019-X
M. Pešić, U. Schroeder, T. Mikolajick
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引用次数: 8
Transmission Electron Microscopy (STEM and TEM) 透射电子显微镜(STEM和TEM)
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00015-2
E. Grimley, J. Lebeau
{"title":"Transmission Electron Microscopy (STEM and TEM)","authors":"E. Grimley, J. Lebeau","doi":"10.1016/B978-0-08-102430-0.00015-2","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00015-2","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126343300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effect of Surface/Interface Energy and Stress on the Ferroelectric Properties 表面/界面能和应力对铁电性能的影响
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00011-5
M. Park, T. Schenk, S. Starschich, C. Fancher, Han Joon Kim, U. Böttger, C. Hwang, A. Toriumi, X. Tian, U. Schroeder
{"title":"Effect of Surface/Interface Energy and Stress on the Ferroelectric Properties","authors":"M. Park, T. Schenk, S. Starschich, C. Fancher, Han Joon Kim, U. Böttger, C. Hwang, A. Toriumi, X. Tian, U. Schroeder","doi":"10.1016/B978-0-08-102430-0.00011-5","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00011-5","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"212 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134088673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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