发布求助
文献互助 智能选刊 最新文献

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices最新文献

筛选
英文 中文
Polarization Switching in HfO2-Based Devices 基于hfo2器件的极化开关
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00016-4
H. Mulaosmanovic, S. Slesazeck
{"title":"Polarization Switching in HfO2-Based Devices","authors":"H. Mulaosmanovic, S. Slesazeck","doi":"10.1016/B978-0-08-102430-0.00016-4","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00016-4","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"28 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120905510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Index 指数
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/b978-0-08-102430-0.09997-6
{"title":"Index","authors":"","doi":"10.1016/b978-0-08-102430-0.09997-6","DOIUrl":"https://doi.org/10.1016/b978-0-08-102430-0.09997-6","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122987468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Contributors 贡献者
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/b978-0-08-102430-0.09991-5
N. Balke, Rohit Batra, U. Böttger, E. Breyer, Keum Do Kim, C. Fancher, F. Fengler, S. Fujii, Hiroshi Funakubo, D. Griesche, E. Grimley, A. Gruverman, M. Hoffmann, Cheol Seong Hwang, S. Hyun, J. Ihlefeld, Brienne S. Johnson, Jacob L. Jones, Alfred Kersch, Han Joon Kim, Christopher Künneth, Luca Larcher, J. Lebeau, Young Hwan Lee, S. Migita, Thomas Mikolajick, J. Mueller, H. Mulaosmanovic, M. Park, M. Pešić, R. Ramprasad, G. Rossetti, Masumi Saitoh, T. Schenk, T. Schneller, U. Schroeder, S. Shibayama, Takao Shimizu, S. Slesazeck, S. Starschich, I. Stolichnov, X. Tian, A. Toriumi, L. Xu
{"title":"Contributors","authors":"N. Balke, Rohit Batra, U. Böttger, E. Breyer, Keum Do Kim, C. Fancher, F. Fengler, S. Fujii, Hiroshi Funakubo, D. Griesche, E. Grimley, A. Gruverman, M. Hoffmann, Cheol Seong Hwang, S. Hyun, J. Ihlefeld, Brienne S. Johnson, Jacob L. Jones, Alfred Kersch, Han Joon Kim, Christopher Künneth, Luca Larcher, J. Lebeau, Young Hwan Lee, S. Migita, Thomas Mikolajick, J. Mueller, H. Mulaosmanovic, M. Park, M. Pešić, R. Ramprasad, G. Rossetti, Masumi Saitoh, T. Schenk, T. Schneller, U. Schroeder, S. Shibayama, Takao Shimizu, S. Slesazeck, S. Starschich, I. Stolichnov, X. Tian, A. Toriumi, L. Xu","doi":"10.1016/b978-0-08-102430-0.09991-5","DOIUrl":"https://doi.org/10.1016/b978-0-08-102430-0.09991-5","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117336242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Field Cycling Behavior of Ferroelectric HfO2-Based Capacitors 铁电hfo2基电容器的场循环行为
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00017-6
F. Fengler, M. Park, T. Schenk, M. Pešić, U. Schroeder
{"title":"Field Cycling Behavior of Ferroelectric HfO2-Based Capacitors","authors":"F. Fengler, M. Park, T. Schenk, M. Pešić, U. Schroeder","doi":"10.1016/B978-0-08-102430-0.00017-6","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00017-6","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125505658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Dopants in Chemical Solution-Deposited HfO2 Films 化学溶液沉积HfO2薄膜中的掺杂剂
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00010-3
U. Böttger, S. Starschich, D. Griesche, T. Schneller
{"title":"Dopants in Chemical Solution-Deposited HfO2 Films","authors":"U. Böttger, S. Starschich, D. Griesche, T. Schneller","doi":"10.1016/B978-0-08-102430-0.00010-3","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00010-3","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128036170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Structures, Phase Equilibria, and Properties of HfO2 HfO2的结构、相平衡和性质
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00002-4
Brienne S. Johnson, Jacob L. Jones
{"title":"Structures, Phase Equilibria, and Properties of HfO2","authors":"Brienne S. Johnson, Jacob L. Jones","doi":"10.1016/B978-0-08-102430-0.00002-4","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00002-4","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133936571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Structural Origin of Temperature-Dependent Ferroelectricity 温度相关铁电性的结构起源
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00012-7
M. Park, Takao Shimizu, H. Funakubo, U. Schroeder
{"title":"Structural Origin of Temperature-Dependent Ferroelectricity","authors":"M. Park, Takao Shimizu, H. Funakubo, U. Schroeder","doi":"10.1016/B978-0-08-102430-0.00012-7","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00012-7","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114999576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ferroelectric Field Effect Transistor for Neuromorphic Applications 神经形态应用的铁电场效应晶体管
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00025-5
H. Mulaosmanovic, S. Slesazeck
{"title":"Ferroelectric Field Effect Transistor for Neuromorphic Applications","authors":"H. Mulaosmanovic, S. Slesazeck","doi":"10.1016/B978-0-08-102430-0.00025-5","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00025-5","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127297499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fundamentals of Ferroelectric and Piezoelectric Properties 铁电和压电性质基础
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00001-2
J. Ihlefeld
{"title":"Fundamentals of Ferroelectric and Piezoelectric Properties","authors":"J. Ihlefeld","doi":"10.1016/B978-0-08-102430-0.00001-2","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00001-2","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132234163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Impact of Zr Content in Atomic Layer Deposited Hf1−Zr O2 Thin Films Zr含量对原子层沉积Hf1−Zr O2薄膜的影响
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00007-3
M. Park, Han Joon Kim, Keum Do Kim, Young Hwan Lee, S. Hyun, C. Hwang
{"title":"Impact of Zr Content in Atomic Layer Deposited Hf1−Zr O2 Thin Films","authors":"M. Park, Han Joon Kim, Keum Do Kim, Young Hwan Lee, S. Hyun, C. Hwang","doi":"10.1016/B978-0-08-102430-0.00007-3","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00007-3","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134599921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信