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Impact of Zr Content in Atomic Layer Deposited Hf1−Zr O2 Thin Films

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI:10.1016/B978-0-08-102430-0.00007-3
M. Park, Han Joon Kim, Keum Do Kim, Young Hwan Lee, S. Hyun, C. Hwang
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引用次数: 6
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Zr含量对原子层沉积Hf1−Zr O2薄膜的影响
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices
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