Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices

Polarization Switching in HfO2-Based Devices

Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00016-4 H. Mulaosmanovic, S. Slesazeck

Index

Pub Date : 1900-01-01 DOI: 10.1016/b978-0-08-102430-0.09997-6

Contributors

Pub Date : 1900-01-01 DOI: 10.1016/b978-0-08-102430-0.09991-5 N. Balke, Rohit Batra, U. Böttger, E. Breyer, Keum Do Kim, C. Fancher, F. Fengler, S. Fujii, Hiroshi Funakubo, D. Griesche, E. Grimley, A. Gruverman, M. Hoffmann, Cheol Seong Hwang, S. Hyun, J. Ihlefeld, Brienne S. Johnson, Jacob L. Jones, Alfred Kersch, Han Joon Kim, Christopher Künneth, Luca Larcher, J. Lebeau, Young Hwan Lee, S. Migita, Thomas Mikolajick, J. Mueller, H. Mulaosmanovic, M. Park, M. Pešić, R. Ramprasad, G. Rossetti, Masumi Saitoh, T. Schenk, T. Schneller, U. Schroeder, S. Shibayama, Takao Shimizu, S. Slesazeck, S. Starschich, I. Stolichnov, X. Tian, A. Toriumi, L. Xu