Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices最新文献

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Dopants in Atomic Layer Deposited HfO2 Thin Films 原子层沉积HfO2薄膜中的掺杂剂
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00005-X
M. Park, T. Schenk, U. Schroeder
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引用次数: 4
Impact of Electrodes on the Ferroelectric Properties 电极对铁电性能的影响
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00008-5
M. Park, T. Schenk, C. Hwang, U. Schroeder
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引用次数: 2
Ferroelectric Field Effect Transistor 铁电场效应晶体管
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00022-X
Johannes Mueller, S. Slesazeck, T. Mikolajick
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引用次数: 2
Thermodynamics of Phase Stability and Ferroelectricity From First Principles 从第一性原理看相稳定性和铁电性热力学
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00006-1
Christopher Künneth, Rohit Batra, G. Rossetti, R. Ramprasad, A. Kersch
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引用次数: 10
Negative Capacitance in HfO2- and ZrO2-Based Ferroelectrics HfO2和zro2基铁电体中的负电容
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00023-1
M. Hoffmann, S. Slesazeck, T. Mikolajick, C. Hwang
{"title":"Negative Capacitance in HfO2- and ZrO2-Based Ferroelectrics","authors":"M. Hoffmann, S. Slesazeck, T. Mikolajick, C. Hwang","doi":"10.1016/B978-0-08-102430-0.00023-1","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00023-1","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131188091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Piezoresponse Force Microscopy (PFM) 压电响应力显微镜(PFM)
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102430-0.00014-0
N. Balke, T. Schenk, I. Stolichnov, A. Gruverman
{"title":"Piezoresponse Force Microscopy (PFM)","authors":"N. Balke, T. Schenk, I. Stolichnov, A. Gruverman","doi":"10.1016/B978-0-08-102430-0.00014-0","DOIUrl":"https://doi.org/10.1016/B978-0-08-102430-0.00014-0","url":null,"abstract":"","PeriodicalId":401168,"journal":{"name":"Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126109850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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