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2007 International Workshop on Physics of Semiconductor Devices最新文献

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III-V compound semiconductor nanowires for optoelectronic applications 光电应用的III-V型化合物半导体纳米线
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2012-02-15 DOI: 10.1364/AOEE.2013.JSA1A.2
Q. Gap, H. Joyce, Y. Kim, H. Tan, C. Jagadish, H. Wang, Y. Guo, J. Zou
{"title":"III-V compound semiconductor nanowires for optoelectronic applications","authors":"Q. Gap, H. Joyce, Y. Kim, H. Tan, C. Jagadish, H. Wang, Y. Guo, J. Zou","doi":"10.1364/AOEE.2013.JSA1A.2","DOIUrl":"https://doi.org/10.1364/AOEE.2013.JSA1A.2","url":null,"abstract":"Summary form only given. In the last few years, semiconductor nanowires (NWs) have attracted intensive attention due to both the intriguing fundamental properties and their potential applications in optoelectronic devices. GaAs NWs grown by metalorganic chemical vapor deposition (MOCVD) often exhibit tapered and kinked morphologies, depending on growth temperature. However, straight NWs of uniform diameter are preferred for device applications. We have developed a two-temperature growth procedure using MOCVD to simultaneously minimize adatom diffusion, tapering and kinking. GaAs NWs grown by this procedure have shown no planar defects and smooth sidewalls. This procedure should enable the development of ternary NWs with uniform composition and shape. Compared with a large amount of studies on GaAs, InP and GaN based III-V NWs, the antimonide III-V NWs have received little attention, despite their great potential for near- and mid-infrared device applications. Recently, GaSb subwavelength-wire lasers emitting near 1.55 mum have been demonstrated which opened the possibility to use NWs for telecommunications. In this talk, we report a successful growth of GaSb/GaAs heterostructure NWs on GaAs (111) B substrate by MOCVD. No misfit dislocations can be observed in the GaSb NW part from HRTEM, which suggests a complete strain relaxation of the GaSb NW on the GaAs NW.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123378915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Safranine T dye based photo electrochemical solar cell: Effect of electrodes on device mechanism 橘红色T染料基光电化学太阳能电池:电极对器件机理的影响
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472584
S. Maity, N. Manik
{"title":"Safranine T dye based photo electrochemical solar cell: Effect of electrodes on device mechanism","authors":"S. Maity, N. Manik","doi":"10.1109/IWPSD.2007.4472584","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472584","url":null,"abstract":"We made two photovoltaic devices using blend of Safranine T dye in a thin film of polyvinyl alcohol mixed with solid electrolyte made by PEO and LiClO4, placed between two electrodes, resulting photo electrochemical cell (PEC) structure. One of the cells made of two ITO coated glass plates as electrodes and the other with ITO and Silver. The current voltage relation of the cells has been measured in the dark. Detail analysis of the dark I-V curve shows two distinct regions below and above certain voltage for the second cell unlike to first cell, which has only one region. I- V curve for the cells indicates trap charge limited (TCL) conduction through exponentially distributed traps. Characteristic trap energy (Et) has been calculated for both the cells. Use of dissimilar electrodes increases efficiency up to one order in magnitude than the other. From photovoltaic current growth nature we discussed the charge transport process through these materials using concept of dispersive transport model.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115589791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High temperature electrical properties of ultra thin Ta2O5 films on ZnO/n-Si heterolayrs ZnO/n-Si异质层上超薄Ta2O5薄膜的高温电学性能
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472537
S. Nandi, J. Tiwari
{"title":"High temperature electrical properties of ultra thin Ta2O5 films on ZnO/n-Si heterolayrs","authors":"S. Nandi, J. Tiwari","doi":"10.1109/IWPSD.2007.4472537","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472537","url":null,"abstract":"Ultrathin Ta2O5 films have been deposited on ZnO/n-Si substrate by microwave plasma enhanced chemical vapor deposition technique. Using metal insulator semiconductor (MIS) capacitor structures, the capacitance-voltage and the leakage current characteristics of Ta2O5 films have been investigated in the temperature range of 27-200degC. Poole-Frenkel current conduction mechanism was found to be dominated at high temperature.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115650216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polymer based 13 MHz RFID transponders 基于聚合物的13兆赫RFID转发器
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472565
F. Walter
{"title":"Polymer based 13 MHz RFID transponders","authors":"F. Walter","doi":"10.1109/IWPSD.2007.4472565","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472565","url":null,"abstract":"Summary form only given. Printed electronics based on polymer transistors will enable the availability of electronics on nearly every product. This will create a new electronics revolution, not by replacing standard electronics based on silicon, but it will enable the realization of electronic intelligence to products, where there is no electronics today. This includes low cost radio frequency identification (RFID) applications, e.g. as a substitute of the optical barcode, as well as smart objects and electronics for flexible displays. This is possible due to the new polymer electronics technology, based on organic conducting and semi conducting materials. By using this technology, PolylC combines soluble electronic polymer materials with high volume printing processes to achieve low cost, high volume printed electronics. Recent results on our technology as well as our roadmap towards printed electronics products will be presented, including fast and stable circuits as well as RFID tags working at 13.56 MHz.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116660083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of direct tunneling current in carbon nanotube based floating gate devices 碳纳米管浮栅器件中直接隧穿电流的研究
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472660
G. Chakraborty, C. Sarkar
{"title":"Study of direct tunneling current in carbon nanotube based floating gate devices","authors":"G. Chakraborty, C. Sarkar","doi":"10.1109/IWPSD.2007.4472660","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472660","url":null,"abstract":"In this study a metal oxide semiconductor (MOS) structure has been proposed using single walled semiconducting carbon nanotube (SWCNT) as floating gate and high-k dielectric Hafnium Aluminate (HfAlO) as tunnel and control oxide. This composite gate dielectric shows a low gate leakage current which is generally a direct tunneling current. To evaluate this direct tunneling current two important parameters such as barrier height and effective mass have been modified. This MOS transistor used as nonvolatile memory or flash memory in present VLSI technology.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116978618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
MMIC technology at Gallium Arsenide Enabling Technology Centre 砷化镓使能技术中心的MMIC技术
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472504
R. Muralidharan
{"title":"MMIC technology at Gallium Arsenide Enabling Technology Centre","authors":"R. Muralidharan","doi":"10.1109/IWPSD.2007.4472504","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472504","url":null,"abstract":"An overview of the activities at Gallium Arsenide Enabling TEchnology Centre (GAETEC) at Hyderabad, India is being presented here. GAETEC is a vertically integrated foundry with design, fabrication, assembly, testing, packaging and module-making facilities. The technologies available for production would be described in detail, and mention would be made of those being implemented. Examples of products developed and delivered, and those under development would also be given.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127136838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multiscale modeling of point defects in strained silicon 应变硅中点缺陷的多尺度建模
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472452
V. Tewary, Bo Yang
{"title":"Multiscale modeling of point defects in strained silicon","authors":"V. Tewary, Bo Yang","doi":"10.1109/IWPSD.2007.4472452","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472452","url":null,"abstract":"A multiscale Green's function method is described for modeling impurities in strained silicon. The model seamlessly links the length scales from atomistic to macro. The model accounts for the discrete lattice effects, elastic anisotropy, nonlinear effects, and the presence of point defects as well as surfaces and interfaces in the solid. An effective force, called the Kanzaki force, is defined, which is a characteristic of the defect configuration. This force can be calculated and stored for later use, which makes the method numerically convenient for subsequent calculations. The Kanzaki force is used to calculate the dipole tensor that is a measure of the strength of the defects and can be directly used to calculate the strains from the familiar continuum Green's function. Numerical results are presented for the lattice distortion and the dipole tensors for various point defects (vacancy and substitutional germanium and carbon impurities) in strained silicon. Calculated values of elastic constants are reported for strained silicon.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125072726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Diamond Schottky diodes for power conversion 用于功率转换的钻石肖特基二极管
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472632
G. Amaratunga
{"title":"Diamond Schottky diodes for power conversion","authors":"G. Amaratunga","doi":"10.1109/IWPSD.2007.4472632","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472632","url":null,"abstract":"The replacement of silicon with wide bandgap materials for fabricating power devices rated at more than 200V is a topic of much ongoing interest. The use of Si p-i-n diodes as freewheeling diodes in circuits working at very high frequencies causes significant power losses due to their bipolar turn-off. Silicon carbide Schottky barrier diodes (SBDs) rated up to 1.2kV are already commercially available. Given the superior electronic properties of single crystal diamond, SBDs in diamond could be the ideal solution in terms of increasing efficiency in power electronics.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125114136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Concepts in next generation photovoltaic devices - materials engineering perspective 新一代光电器件的概念-材料工程观点
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472645
N. Patibandla
{"title":"Concepts in next generation photovoltaic devices - materials engineering perspective","authors":"N. Patibandla","doi":"10.1109/IWPSD.2007.4472645","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472645","url":null,"abstract":"Summary form only given. Over the next quarter century photovoltaic (PV) electricity generation is projected to grow at a double digit rate. Advancements in PV device architecture, improvements in processing technologies, manufacturing scale-up, and a broader adoption of grid-interconnection standards are expected to enhance this growth further. In this presentation current state of the art in PV device fabrication techniques will be reviewed as well as concepts for developing photovoltaic devices that are nano-architectured to achieve higher device efficiency and for lowering the manufacturing costs by the use of traditional processing techniques will be discussed.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126817561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance enhancement of the tunnel field effect transistor using a SiGe source 利用SiGe源提高隧道场效应晶体管的性能
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472465
N. Patel, A. Ramesha, S. Mahapatra
{"title":"Performance enhancement of the tunnel field effect transistor using a SiGe source","authors":"N. Patel, A. Ramesha, S. Mahapatra","doi":"10.1109/IWPSD.2007.4472465","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472465","url":null,"abstract":"Due to extremely low off state current (IOFF) and excellent sub-threshold characteristics, the tunnel field effect transistor (TFET) has attracted a lot of attention for low standby power applications. In this work, we aim to increase the on state current (ION) of the device. A novel device architecture with a SiGe source is proposed. The proposed structure shows an order of improvement in ION compared to the conventional Si structure. A process flow adaptable to conventional CMOS technology is also addressed.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122348808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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