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2007 International Workshop on Physics of Semiconductor Devices最新文献

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An improvement of the breakdown voltage characteristic of trench gate IGBTs by using a shielding layer 采用屏蔽层改善沟槽栅igbt击穿电压特性
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472639
Jong-Seok Lee, H. Shin, H. Lee, E. Kang, M. Sung
{"title":"An improvement of the breakdown voltage characteristic of trench gate IGBTs by using a shielding layer","authors":"Jong-Seok Lee, H. Shin, H. Lee, E. Kang, M. Sung","doi":"10.1109/IWPSD.2007.4472639","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472639","url":null,"abstract":"A trench gate insulated gate bipolar transistor(IGBT) employing a shielding layer, which improves the breakdown voltage characteristic is proposed and verified by 2D numerical simulation. The shielding layer concept is proposed to alleviate the electric field of concentrated on the trench bottom corner. By simulation results, we verified that a shielding layer reduced the electric fields not only in the gate oxide but in the p-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126906551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High-k/Metal Gates- from research to reality 高k/金属门-从研究到现实
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472451
V. Narayanan
{"title":"High-k/Metal Gates- from research to reality","authors":"V. Narayanan","doi":"10.1109/IWPSD.2007.4472451","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472451","url":null,"abstract":"Miniaturization of the Si MOSFET required in order to attain higher transistor performance and greater economies of scale have spurred the need for significant materials innovations. This is most apparent in the search for the ideal high-k/metal gate stack as replacement for conventional SiON/Poly-Si gate stacks. In this paper, some of the key advances that have made high-k/metal gate stacks a reality will be reviewed. The innovations included optimized metal and interfaces for improved electron mobility in HfO2/metal gate stacks and insertion of nanoscale gp. IIA and IIIB elements layers between the HfO2 and metal electrode stack for band-edge nMOSFETs. Significant hurdles prevented similar solutions for pMOSFET stacks, primarily due to the presence of thermally activated point defects. However, by careful engineering optimization, pMOSFETs have also been realized, resulting in scalable high performance CMOS using High-k/metal gate stacks.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"2003 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125824475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Study on magneto-transport in thin HgCdTe crystals HgCdTe薄晶体中磁输运的研究
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472549
R. Manchanda, R.K. Sharma, O. P. Thakur, R. Pal, A. Raina, R. Venkatraman, P. K. Basu
{"title":"Study on magneto-transport in thin HgCdTe crystals","authors":"R. Manchanda, R.K. Sharma, O. P. Thakur, R. Pal, A. Raina, R. Venkatraman, P. K. Basu","doi":"10.1109/IWPSD.2007.4472549","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472549","url":null,"abstract":"Variable magnetic field Hall and magneto- resistance measurements were carried out at 77K on thin HgCdTe samples of different thickness. A simultaneous multi-carrier fitting of magneto resistance and Hall coefficient vs. magnetic field data was used to extract the bulk and surface carrier information. Studies have been conducted on both chemo-mechanically polished bare samples as well as the ones passivated with anodic oxide. The bulk carrier concentration in very thin (< 30 mum) samples have been found to vary with thickness.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126543228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of electrical transport of hole-doped TPD 空穴掺杂TPD的电输运研究
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472594
D. Ray, M. Patankar, K. L. Narasimhan
{"title":"Study of electrical transport of hole-doped TPD","authors":"D. Ray, M. Patankar, K. L. Narasimhan","doi":"10.1109/IWPSD.2007.4472594","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472594","url":null,"abstract":"In this paper we study the electrical properties of hole-doped TPD using C-V and I-V-T measurements. F4- TCNQ is the acceptor molecule used to dope TPD. From C- V measurements the Fermi level of the system is determined to be at 0.15 eV with respect to the HOMO of TPD. The activation energy of the hole mobility is found from temperature dependence of the ohmic dark current.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121799125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Formation of Ge-based nanowires for nanoelectronic applications by vapor-liquid-solid mechanism 气-液-固机制制备纳米电子用锗基纳米线
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472524
K. Das, S. P. Mondal, A. Dhar, S. Ray
{"title":"Formation of Ge-based nanowires for nanoelectronic applications by vapor-liquid-solid mechanism","authors":"K. Das, S. P. Mondal, A. Dhar, S. Ray","doi":"10.1109/IWPSD.2007.4472524","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472524","url":null,"abstract":"Using vapour-liquid-solid mechanism, we have grown Ge and composition modulated Ge:SnO2 nanowires on gold coated silicon substrates with diameter distribution ranging from 30-100 nm, and length more than tens of micrometers. The outer sheath of pure Ge nanowires consists of GeO2 as revealed from the XRD and TEM analyses. Raman spectra of the as-grown nanowires exhibit a blue shift, which is attributed to the compressive strain in the wires. The formed T-junction Ge:SnO2 axial nanowire heterostructure is attractive for novel optical and electronic devices.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124980820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Efficient CW terahertz generation with n-i-pn-i-p photomixers 用n-i-pn-i-p光混合器产生高效的连续波太赫兹
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472515
G. Dohler, S. Preu, S. Malzer, L.J. Wang, M. Hanson, J. Zimmerman, A. Gossard, T. Wilkinson, E. Brown
{"title":"Efficient CW terahertz generation with n-i-pn-i-p photomixers","authors":"G. Dohler, S. Preu, S. Malzer, L.J. Wang, M. Hanson, J. Zimmerman, A. Gossard, T. Wilkinson, E. Brown","doi":"10.1109/IWPSD.2007.4472515","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472515","url":null,"abstract":"We report on a concept for highly efficient generation of terahertz (THz) radiation and its verification by experimental studies. The THz generation is based on photomixing in a periodic stack of specially designed pin- photodiodes. This design allows to suppress the slow hole transport, to optimize high-speed ballistic electron transport in the photodiodes and, at the same time, to avoid the degradation of the high-frequency performance due to the usual \"RC- roll-off.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125000720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An efficient technique of integrating parallel neural networks for faster and power efficient nanodevices for ultradense VLSI circuits 一种集成并行神经网络的高效技术，用于超密集VLSI电路中更快、更节能的纳米器件
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472490
S. Sarkar, A. Ghosh, M. Gautham, A. SobhaRani, D. Samanta
{"title":"An efficient technique of integrating parallel neural networks for faster and power efficient nanodevices for ultradense VLSI circuits","authors":"S. Sarkar, A. Ghosh, M. Gautham, A. SobhaRani, D. Samanta","doi":"10.1109/IWPSD.2007.4472490","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472490","url":null,"abstract":"Recently power dissipation (in addition to the earlier three aspects e.g. speed, size and cost) has become the main design concern in several applications. However, power saving should be achieved without compromising high performance or minimum area, thereby creating a new design culture for VLSI. Power consideration has been the ultimate design criteria in some special portable applications like pacemakers, mobile sets and wristwatches. As an attempt towards this, in the present work parallel back propagation artificial neural networks are employed to optimize and predict the various system parameter of a (In, Ga)As nanodevice so that the relevant device will exhibit better high frequency response and will be power efficient. Moreover prediction time is reduced using parallelism in ANN thereby making the design less time consuming.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131619111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Photoluminescence study of polycrystalline and single crystal diamond 多晶和单晶金刚石的光致发光研究
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472665
D. R. Mohapatra, P. Rai, A. Misra, P. Tyagi, D. S. Misra
{"title":"Photoluminescence study of polycrystalline and single crystal diamond","authors":"D. R. Mohapatra, P. Rai, A. Misra, P. Tyagi, D. S. Misra","doi":"10.1109/IWPSD.2007.4472665","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472665","url":null,"abstract":"Employing photoluminescence (PL) spectroscopy, we have carried out a detailed study of the different luminescence center in chemical-vapor- deposited (CVD) single-crystal and poly-crystalline diamond and natural diamonds. In addition to the zero phonon line, the fine structure of the PL emission spectra reveals vibronic bands corresponding to both phonon emission and absorption. At lower temperature, the emission intensity increases and peak position shifts towards higher energy band.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125249362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Electronic structure of GaxAl1-xSb alloys by empirical pseudopotential method 经验赝势法研究GaxAl1-xSb合金的电子结构
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472533
N. Patel, K. B. Joshi
{"title":"Electronic structure of GaxAl1-xSb alloys by empirical pseudopotential method","authors":"N. Patel, K. B. Joshi","doi":"10.1109/IWPSD.2007.4472533","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472533","url":null,"abstract":"Electronic band structure calculations are reported for the Ga<sub>x</sub>Al<sub>1-x</sub>Sb alloys using empirical pseudopotential method within the virtual crystal approximation. The calculations show that the system of Ga<sub>x</sub>Al<sub>1-x</sub>Sb alloys consists of multiple valley conduction bands. The Gamma-L crossover is found for the Ga<sub>0.74</sub>Al<sub>0.26</sub>Sb alloy well in agreement with the experimental findings. The conduction band minimum (CBM) has been observed to switch at the (0.87,0,0) point for Ga<sub>0.51</sub>Al<sub>0.49</sub>Sb. The CBM shifts to the X point for Ga<sub>0.21</sub>Al<sub>0.79</sub>Sb alloy and remains at X leading Anally to indirect band gap in AlSb. The calculations have been used to report bowing parameters E<sub>X</sub> and E<sub>L</sub> for the alloys. Our findings may be useful to select the materials in a range of composition to examine the bowing parameter E<sub>X</sub> and effective mass experimentally to design low dimensional quantum systems. Refractive indices for all the alloys are also calculated for possible comparison with experiments to appear in future.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124691381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ATLAS simulation of LWIR photodetector based on mercury cadmium telluride 基于碲化汞镉的LWIR光电探测器的ATLAS模拟
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472540
P. Saxena, P. Chakrabarti
{"title":"ATLAS simulation of LWIR photodetector based on mercury cadmium telluride","authors":"P. Saxena, P. Chakrabarti","doi":"10.1109/IWPSD.2007.4472540","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472540","url":null,"abstract":"In the present paper the performance of p<sup>+</sup>-n<sup>0</sup>-n<sup>+</sup> homojunction Hg<sub>1-x</sub>Cd<sub>x</sub>Te (lambda<sub>c</sub> = 10.6 mum photodetector has been analyzed theoretically at 77 K. Electrical characterization of the homojunction photodetector has been carried out using ATLAS software of SILVACO<sup>reg</sup> and the results are compared and contrasted with the results of our theoretical model. The dependence of the p<sup>+</sup>-n<sup>0</sup> junction position within homostructure on bandgap energy profiles and the influence of doping concentration on photodetector parameters have been studied. The dark current-voltage characteristics and dynamic resistance versus voltage are simulated and analyzed theoretically. Results of our study reveal that suitable biasing conditions the photodetector exhibits a dark current, I<sub>D</sub> ap10<sup>-7</sup> A, and a zero bias resistance, R<sub>0</sub> = 10<sup>6</sup>Omega.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116588405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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