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2007 International Workshop on Physics of Semiconductor Devices最新文献

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Necessity for quantum mechanical simulation for the future technology nodes 未来技术节点量子力学模拟的必要性
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472662
B. Ray, K. Subhakar, S. Mahapatra
{"title":"Necessity for quantum mechanical simulation for the future technology nodes","authors":"B. Ray, K. Subhakar, S. Mahapatra","doi":"10.1109/IWPSD.2007.4472662","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472662","url":null,"abstract":"In this paper we present and compare the results obtained from semi-classical and quantum mechanical simulation for a double gate MOSFET structure to analyze the electrostatics and carrier dynamics of this device. The geometries like gate length, body thickness of this device have been chosen according to the ITRS specification for the different technology nodes. We have shown the extent of deviation between the semi- classical and quantum mechanical results and hence the need of quantum simulations for the promising nanoscale devices in the future technology nodes predicted in ITRS.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"290 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122716079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Frontier of organic light emitting devices 有机发光器件的前沿
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472568
C. Adachi, T. Matsushima, H. Nakanotani, T. Sakanoue, M. Yahiro, D. Yokoyama
{"title":"Frontier of organic light emitting devices","authors":"C. Adachi, T. Matsushima, H. Nakanotani, T. Sakanoue, M. Yahiro, D. Yokoyama","doi":"10.1109/IWPSD.2007.4472568","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472568","url":null,"abstract":"We report recent progresses on organic light emitting devices such as organic light emitting diode (OLED), light-emitting organic field effect transistor (LE-OFET) and organic laser diode (OLD). We demonstrate very low driving voltage of OLEDs using a p-i-n structure which also provides high current carrier injection over kA/cm2. Further we demonstrate novel organic devices such as light emitting FET. We also discuss future prospect of OLD based on our recent materials' development and analysis of operation mechanism.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121982444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of high carrier injection on the performance of a mid-infrared DH-LED 高载流子注入对中红外dhled性能的影响
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472522
Sanjeev, P. Chakrabarti
{"title":"Effect of high carrier injection on the performance of a mid-infrared DH-LED","authors":"Sanjeev, P. Chakrabarti","doi":"10.1109/IWPSD.2007.4472522","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472522","url":null,"abstract":"In this paper we present a simple analytical approach to determine the effect of high-level injection on the performance of a double heterostructure light emitting diode (DH-LED) suitable for use as a source in absorption gas spectroscopy and/ or in a futuristic optical fiber communication system in the mid-infrared spectral region at room temperature. The effect of high injection on the lifetime of the carriers (both radiative and non-radiative) and carrier confinement in heterostructure has been simulated analytically. It has been seen that an overall reduction in the carrier lifetime and carrier confinement under high injection actually reduces the quantum efficiency and limit the power output.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122065878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microstructural development and phase transformations in TiO2 nanostructures TiO2纳米结构的微观结构发展与相变
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472658
A. Srivastava, M. Deepa, H. Kleebe, H. Fuess,, S. Bhandari
{"title":"Microstructural development and phase transformations in TiO2 nanostructures","authors":"A. Srivastava, M. Deepa, H. Kleebe, H. Fuess,, S. Bhandari","doi":"10.1109/IWPSD.2007.4472658","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472658","url":null,"abstract":"TiO2 nanostructures of particles and wires have been processed by employing a sol-gel technique and subsequent suitable annealing treatments. A systematic evaluation of phase transformations and morphological features has been investigated exploiting the electron beam imaging and corresponding reciprocal space interpretations.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116811069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancement of light out-coupling efficiency of organic light-emitting devices by anti-reflection coating technique 用增反射涂层技术提高有机发光器件的光耦合效率
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472598
D. Mehta, K. Saxena, V. K. Rai, R. Srivastava, M. N. Kamalasanan
{"title":"Enhancement of light out-coupling efficiency of organic light-emitting devices by anti-reflection coating technique","authors":"D. Mehta, K. Saxena, V. K. Rai, R. Srivastava, M. N. Kamalasanan","doi":"10.1109/IWPSD.2007.4472598","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472598","url":null,"abstract":"We report significant enhancement of light out- coupling efficiency in organic light-emitting devices (OLEDs) by means of anti-reflection coating of magnesium fluoride (MgF2) on the backside of glass substrate. OLEDs were fabricated employing the green electrophosphorescent material fac tris (2- phenylpyridine) iridium [Ir(ppy)3] doped in 4, 4', 8-N, N 8-dicarbazole-biphenyl (CBP). Single- layer MgF2 with the thickness of lambda/4 was then vacuum deposited on the backside of glass substrate of OLED.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129568880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of annealing on photoluminescence property of nano particle composite ZnO films 退火对纳米颗粒复合ZnO薄膜光致发光性能的影响
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472656
S. Mandal, H. Mallik, A. Dhar, S. Ray
{"title":"Effect of annealing on photoluminescence property of nano particle composite ZnO films","authors":"S. Mandal, H. Mallik, A. Dhar, S. Ray","doi":"10.1109/IWPSD.2007.4472656","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472656","url":null,"abstract":"The effect of annealing temperature on the structural as well as photoluminescence (PL) properties of the nanocrystalline ZnO films deposited by sol-gel process has been investigated. The as-deposited film is amorphous in nature, and the crystallinity as well as grain sizes have been found to increase on post-deposition annealing. PL intensity is greatly improved with the increase in annealing temperature, and the band gap of ZnO films is red-shifted. A correlation between the structural and optical properties has been investigated in detail.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129673096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Superior performances from fabricated microstructures on MBE-grown IV-VI lead salt materials for mid-infrared applications mbe生长的IV-VI铅盐材料制备的微结构在中红外应用中的优越性能
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472536
S. Mukherjee, S. Jain, J. Kar, Z. Shi
{"title":"Superior performances from fabricated microstructures on MBE-grown IV-VI lead salt materials for mid-infrared applications","authors":"S. Mukherjee, S. Jain, J. Kar, Z. Shi","doi":"10.1109/IWPSD.2007.4472536","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472536","url":null,"abstract":"A detailed study on microstructures in the form of pillars, rods and tubes based on IV-VI lead salt semiconductor structures grown in molecular beam epitaxy (MBE) was described. Several essential fabrication parameters that controlled the morphological aspects of those microstructures were clearly visualized. Tremendous enhancement of pulsed photoluminescence (PL) intensity was achieved from a single microrod or microtube compared to their bulk samples. The micropillar sample, having free-standing pillar diameter of 5 mum with an inter-pillar distance of 8 mum, showed a consistent temperature tunability of ~3.64 cm-1/0K of the pulsed PL emission peaks. All those novel results dictated a promising future of lead-salt based mid-infrared opto-electronics implemented mainly in the field of industrial trace gas-sensing.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126858753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Coulomb Blockade distribution for a disordered ensemble of Quantum Dots 量子点无序系综的库仑封锁分布
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1103/PHYSREVB.77.115302
A. Kamra, P. Pathak, V. Singh
{"title":"Coulomb Blockade distribution for a disordered ensemble of Quantum Dots","authors":"A. Kamra, P. Pathak, V. Singh","doi":"10.1103/PHYSREVB.77.115302","DOIUrl":"https://doi.org/10.1103/PHYSREVB.77.115302","url":null,"abstract":"Techniques for synthesizing quantum dots (QDs) result in an assembly in which a certain amount of disorder is inevitable. Experimental probes often record the collective properties of an assembly of QDs and not exclusively that of a single QD. On the other hand, theoretical calculations often limit themselves to an analysis of a single QD. In the present work we present a mean field theory for Coulomb Blockade (CB) in an assembly of QDs. We consider two types of disorder: (i) Size disorder; e.g QDs have a distribution of sizes which could be a unimodal or bimodal in nature, (ii) Potential disorder with the confining potential assuming a variety of shapes depending on growth condition and external fields. We illustrate our methodology assuming a gaussian distribution in disorder in both size and potential. However our theoretical framework can accommodate an experimentally provided distribution in disorder. To do this we rely on the scaling laws for CB (also termed as Hubbard U) obtained for an isolated QD. We observe that CB is partially suppressed by the disorder. Further, the distribution in U is a skewed gaussian with enhanced broadening.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123493533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of dielectric screening and intersubband coupling on low temperature electron mobility in a AlGaAs / InGaAs / GaAs asymmetric quantum well structure 介电屏蔽和子带间耦合对AlGaAs / InGaAs / GaAs非对称量子阱结构中低温电子迁移率的影响
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472534
T. Sahu, P. K. Subudhi, J. N. Patra, C. Sarkar
{"title":"Effect of dielectric screening and intersubband coupling on low temperature electron mobility in a AlGaAs / InGaAs / GaAs asymmetric quantum well structure","authors":"T. Sahu, P. K. Subudhi, J. N. Patra, C. Sarkar","doi":"10.1109/IWPSD.2007.4472534","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472534","url":null,"abstract":"We study the effects of intersubband coupling and screening on the low temperature electron mobility mu<sub>n</sub> in an Al<sub>0.2</sub>Ga<sub>0.8</sub>As / In<sub>0.2</sub>Ga<sub>0.8</sub>As / GaAs barrier-delta doped asymmetric quantum well structure by considering the ionized impurity scattering and alloy disorder scattering. We note that the effect of screening on the alloy disorder potential, which has been normally neglected due to its short range nature, yields interesting results on mu<sub>n</sub>.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114207411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of annealing on poly (3-hexylthiophene) and [6,6]-phenyl C61-butyric acid methyl ester bulk heterojunction solar cells 退火对聚(3-己基噻吩)和[6,6]-苯基c61 -丁酸甲酯体异质结太阳能电池的影响
2007 International Workshop on Physics of Semiconductor Devices Pub Date : 2007-12-01 DOI: 10.1109/IWPSD.2007.4472571
S. Iyer, V. Pagare
{"title":"Effect of annealing on poly (3-hexylthiophene) and [6,6]-phenyl C61-butyric acid methyl ester bulk heterojunction solar cells","authors":"S. Iyer, V. Pagare","doi":"10.1109/IWPSD.2007.4472571","DOIUrl":"https://doi.org/10.1109/IWPSD.2007.4472571","url":null,"abstract":"Bulk heterojunction organic solar cells based on blends of regioregular poly (3-hexylthiopene) (P3HT) and [6, 6]-phenyl-C61-butyric acid methyl ester (PCBM) were fabricated and the effects of postproduction thermal annealing in nitrogen ambient were investigated. After thermal annealing, significant changes in the physical, optical and electrical properties were observed and, the optimal device annealing temperature was found to be 110degC. Segregation of PCBM in the blend during annealing is suggested as a possible cause for device degradation at higher temperature annealing.","PeriodicalId":399603,"journal":{"name":"2007 International Workshop on Physics of Semiconductor Devices","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124451694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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