Study of direct tunneling current in carbon nanotube based floating gate devices

Abstract

In this study a metal oxide semiconductor (MOS) structure has been proposed using single walled semiconducting carbon nanotube (SWCNT) as floating gate and high-k dielectric Hafnium Aluminate (HfAlO) as tunnel and control oxide. This composite gate dielectric shows a low gate leakage current which is generally a direct tunneling current. To evaluate this direct tunneling current two important parameters such as barrier height and effective mass have been modified. This MOS transistor used as nonvolatile memory or flash memory in present VLSI technology.