International Report on Wafer Level Reliability Workshop最新文献

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Sensor-Based Control for Semiconductor Manufacturing Plasma EtchingAsA ProcessVehicle 半导体制造等离子蚀刻工艺车辆的传感器控制
International Report on Wafer Level Reliability Workshop Pub Date : 1900-01-01 DOI: 10.1109/IWLR.1992.657992
F. L. Terry, J. Freudenberg, M. Elta, M. Giles, J. Grizzle, S. Lafortune, P. Kabamba, P. Khargonekar, S. Meerkov, D. Teneketzis
{"title":"Sensor-Based Control for Semiconductor Manufacturing Plasma EtchingAsA ProcessVehicle","authors":"F. L. Terry, J. Freudenberg, M. Elta, M. Giles, J. Grizzle, S. Lafortune, P. Kabamba, P. Khargonekar, S. Meerkov, D. Teneketzis","doi":"10.1109/IWLR.1992.657992","DOIUrl":"https://doi.org/10.1109/IWLR.1992.657992","url":null,"abstract":"","PeriodicalId":395564,"journal":{"name":"International Report on Wafer Level Reliability Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124394232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
EEPROM-based Charging-Effects Sensors for Plasma Etching and Ion Implantation 基于eeprom的等离子体刻蚀和离子注入充电效应传感器
International Report on Wafer Level Reliability Workshop Pub Date : 1900-01-01 DOI: 10.1109/IWLR.1992.657991
W. Lutkaszek
{"title":"EEPROM-based Charging-Effects Sensors for Plasma Etching and Ion Implantation","authors":"W. Lutkaszek","doi":"10.1109/IWLR.1992.657991","DOIUrl":"https://doi.org/10.1109/IWLR.1992.657991","url":null,"abstract":"Conventional studies of damage effects associated with plasma-based processes and ion implantation have focused on characterization of the damage inflicted on typical IC structures and devices. Although essential, these studies provide little insight regarding the nature and magnitudes of the driving forces behind the damage, which is essential for the design of more benign wafer processing equipment, process optimization, etc. This talk describes the design, characterization, and application of re-usable, EEPROM-transistor-based, wafer-level, sensors intended to quantify the driving forces behind the damage, and to v unipolar monitors for capturing information about transients of opposite polarities; extended range UV monitors; and structures for characterization of process environment equivalent networks needed for damage modeling. Most of the sensors incorporated on the monitor wafers employ EEPROM transistors, due to their sensitivity to electrostatic and photo-electric effects, and due to their ability to remember critical attributes of these driving forces. Individual sensors are personalized for specific tasks by additional elements attached to the EEPROM transistors, and by suitable pre-conditioning and test techniques. Experimental results from plasma etching and high-current ion implant experiments are presented to illustrate the capabilities of these (CHARM2) monitors.","PeriodicalId":395564,"journal":{"name":"International Report on Wafer Level Reliability Workshop","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131278300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Consistency Of Similarly Designed Wafer Level Reliability test Structures Produced In Multiple Fabrication Areas 在多个制造区域生产的相似设计晶圆级可靠性测试结构的一致性
International Report on Wafer Level Reliability Workshop Pub Date : 1900-01-01 DOI: 10.1109/IWLR.1992.658006
T. Turner
{"title":"Consistency Of Similarly Designed Wafer Level Reliability test Structures Produced In Multiple Fabrication Areas","authors":"T. Turner","doi":"10.1109/IWLR.1992.658006","DOIUrl":"https://doi.org/10.1109/IWLR.1992.658006","url":null,"abstract":"","PeriodicalId":395564,"journal":{"name":"International Report on Wafer Level Reliability Workshop","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114806892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low-field I-V Method For Improved Dielectric Reliability 提高电介质可靠性的低场I-V法
International Report on Wafer Level Reliability Workshop Pub Date : 1900-01-01 DOI: 10.1109/IWLR.1992.657995
J. Klema
{"title":"Low-field I-V Method For Improved Dielectric Reliability","authors":"J. Klema","doi":"10.1109/IWLR.1992.657995","DOIUrl":"https://doi.org/10.1109/IWLR.1992.657995","url":null,"abstract":"","PeriodicalId":395564,"journal":{"name":"International Report on Wafer Level Reliability Workshop","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123989967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Influence Of Preoxidation Cleaning Chemistry And Wafer Substrate On Thin Gate Oxide Defect Density 预氧化清洗化学和晶圆衬底对薄栅氧化缺陷密度的影响
International Report on Wafer Level Reliability Workshop Pub Date : 1900-01-01 DOI: 10.1109/IWLR.1992.657990
B. Triplett, M. Tran, M. Aminzadeh
{"title":"The Influence Of Preoxidation Cleaning Chemistry And Wafer Substrate On Thin Gate Oxide Defect Density","authors":"B. Triplett, M. Tran, M. Aminzadeh","doi":"10.1109/IWLR.1992.657990","DOIUrl":"https://doi.org/10.1109/IWLR.1992.657990","url":null,"abstract":"","PeriodicalId":395564,"journal":{"name":"International Report on Wafer Level Reliability Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129717293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Wafer Level joule-heated J-Constant EM Tests 晶圆级焦耳加热j -常数电磁测试
International Report on Wafer Level Reliability Workshop Pub Date : 1900-01-01 DOI: 10.1109/IWLR.1992.658003
H. Katto
{"title":"Wafer Level joule-heated J-Constant EM Tests","authors":"H. Katto","doi":"10.1109/IWLR.1992.658003","DOIUrl":"https://doi.org/10.1109/IWLR.1992.658003","url":null,"abstract":"","PeriodicalId":395564,"journal":{"name":"International Report on Wafer Level Reliability Workshop","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126640630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Summary Report: Component Design Discussion Group 总结报告:组件设计讨论组
International Report on Wafer Level Reliability Workshop Pub Date : 1900-01-01 DOI: 10.1109/IWLR.1992.658010
V. Tyree, C. Kuo
{"title":"Summary Report: Component Design Discussion Group","authors":"V. Tyree, C. Kuo","doi":"10.1109/IWLR.1992.658010","DOIUrl":"https://doi.org/10.1109/IWLR.1992.658010","url":null,"abstract":"","PeriodicalId":395564,"journal":{"name":"International Report on Wafer Level Reliability Workshop","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126014601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thin Film Cracking / Delamination Evaluation Using Assembly Test Chip 用组装测试芯片评价薄膜开裂/分层
International Report on Wafer Level Reliability Workshop Pub Date : 1900-01-01 DOI: 10.1109/IWLR.1992.658000
C. Hong
{"title":"Thin Film Cracking / Delamination Evaluation Using Assembly Test Chip","authors":"C. Hong","doi":"10.1109/IWLR.1992.658000","DOIUrl":"https://doi.org/10.1109/IWLR.1992.658000","url":null,"abstract":"We have utilized an Assembly Test Chip (ATC) to study die and packaging interaction during a new fab process development. This paper shows a case study of using ATC to evaluate 2 plastic-package specific failure mechanisms, Thin Film Cracking (TFC) and Thin Film Delamination (TFD). Special test structures have been designed and shown to be sensitive to TFC and TFD. Failures can be detected electrically by simple continuity test, as opposed to the conventional decap &visual technique. We find that Temperature Cycling induces TFC for large die size and Steam induces TFD for thin film stack. New process options have been developed in order to achieve optimum TFC and TFD performance, using the ATC.","PeriodicalId":395564,"journal":{"name":"International Report on Wafer Level Reliability Workshop","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114584040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Summary Report: Package/assembly Discussion Group 摘要报告:包/组装讨论组
International Report on Wafer Level Reliability Workshop Pub Date : 1900-01-01 DOI: 10.1109/IWLR.1992.658009
K. Mohan, G. Shirley, J. Sweet
{"title":"Summary Report: Package/assembly Discussion Group","authors":"K. Mohan, G. Shirley, J. Sweet","doi":"10.1109/IWLR.1992.658009","DOIUrl":"https://doi.org/10.1109/IWLR.1992.658009","url":null,"abstract":"","PeriodicalId":395564,"journal":{"name":"International Report on Wafer Level Reliability Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128500915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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