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Research Reports on Information Science and Electrical Engineering of Kyushu University最新文献

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Characterization of CoSi_2 Gate MOS Structure Formed by Ion Irradiation 离子辐照形成CoSi_2栅极MOS结构的表征
Research Reports on Information Science and Electrical Engineering of Kyushu University Pub Date : 1999-03-26 DOI: 10.15017/1498421
A. Matsushita, Yiqun Zhang, T. Sadoh
{"title":"Characterization of CoSi_2 Gate MOS Structure Formed by Ion Irradiation","authors":"A. Matsushita, Yiqun Zhang, T. Sadoh","doi":"10.15017/1498421","DOIUrl":"https://doi.org/10.15017/1498421","url":null,"abstract":"CoSi2 gate MOS structures were formed by 20, 30, and 40 keV Si2+ Focused Ion Beam (FIB) irradiation to the 14/50 and 21 /75 nm Co/Si layers on 20 mii SiO2 films, and electrical properties of the structures were investigated. The results of the C-V measurement show that the flat-band shift increases with increasing the irradiation damage in SiO2 films. The leak current was also investigated by the I-V measurement, and it is concluded that the leak current was caused by the irradiation damage in SiO2 films and the Si-rich layers near the silicide/SiO2 interface formed by insufficient mixing of Co and Si atoms. In order to optimize the fabrication process of the CoSi2 gate MOS structures by the irradiation, the irradiation damage induced in SiO2 films should be minimized, and the sufficient energy should be deposited in Co/Si layers to induce the mixing of Co and Si atoms. For the 21/75 inn Co/Si sample irradiated with 40 keV Si2+ to 5x 1015 cm-2, the Fowler-Nordheirn tunneling current was observed, and flat-band shift was 1.6 V.","PeriodicalId":39314,"journal":{"name":"Research Reports on Information Science and Electrical Engineering of Kyushu University","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1999-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"66745294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Infinite-Series Expressions of Current Generators in Wave Scattering from a Conducting Body 导体波散射中电流产生器的无穷级数表达式
Research Reports on Information Science and Electrical Engineering of Kyushu University Pub Date : 1999-03-26 DOI: 10.15017/1498406
M. Tateiba, 光生 立居場, Z. Meng, 孟 志奇, ミツオ タテイバ, モウ シキ
{"title":"Infinite-Series Expressions of Current Generators in Wave Scattering from a Conducting Body","authors":"M. Tateiba, 光生 立居場, Z. Meng, 孟 志奇, ミツオ タテイバ, モウ シキ","doi":"10.15017/1498406","DOIUrl":"https://doi.org/10.15017/1498406","url":null,"abstract":"In order to analyze wave scattering from a conducting body surrounded by random media, we defined current generators as an operator that transforms incident waves into surface currents on the body. Current generators are usually expressed in terms of the inverse matrix of which each element is the inner product of basis functions called sometimes modal functions. If the body is a cylinder with circular or elliptic cross-section, the basis functions can be chosen to be orthogonal ones and the inverse matrix becomes diagonal one; consequently, current generators are expressed in infinite series. This paper deals with the infinite-series expressions of current generators for circular and elliptic cylinders by using cylindrical or Mathieu functions according as the circular or elliptic cross-section of cylinders. These explicit expressions are useful for the analysis of scattering problems.","PeriodicalId":39314,"journal":{"name":"Research Reports on Information Science and Electrical Engineering of Kyushu University","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1999-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"66745236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Fabrication and Characteristics Evaluation of CoSi2-Gate MOS Electron Tunneling Emission Cathode cosi2栅极MOS电子隧穿发射阴极的制备及性能评价
Research Reports on Information Science and Electrical Engineering of Kyushu University Pub Date : 1999-03-26 DOI: 10.15017/1498420
Yiqun Zhang, A. Kenjo, T. Sadoh
{"title":"Fabrication and Characteristics Evaluation of CoSi2-Gate MOS Electron Tunneling Emission Cathode","authors":"Yiqun Zhang, A. Kenjo, T. Sadoh","doi":"10.15017/1498420","DOIUrl":"https://doi.org/10.15017/1498420","url":null,"abstract":"","PeriodicalId":39314,"journal":{"name":"Research Reports on Information Science and Electrical Engineering of Kyushu University","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1999-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"66745248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Resistance Increase in CoSi_2 Layer by Irradiation Induced Damage 辐照损伤致CoSi_2层电阻增加
Research Reports on Information Science and Electrical Engineering of Kyushu University Pub Date : 1999-03-26 DOI: 10.15017/1500393
A. Matsushita, T. Sadoh, T. Tsurushima
{"title":"Resistance Increase in CoSi_2 Layer by Irradiation Induced Damage","authors":"A. Matsushita, T. Sadoh, T. Tsurushima","doi":"10.15017/1500393","DOIUrl":"https://doi.org/10.15017/1500393","url":null,"abstract":"Damage induced by ion irradiation in CoSi2 layers on Si02 films has been investigated. CoSi2 layers with 25 nm thickness were irradiation with 25 keV Ar+ ions to a dose of 2 x 1014 cm-2 with various dose rate. Pulsed irradiation with various duty ratios was also eniployed. After the irradiation, the change in sheet resistance of the layers was evaluated. The increase in the resistance increased with increasing the dose rate for samples irradiated with dose rates above the critical value of 7.5 x 1011 cm-2 s-1 at room temperature. The increase has been discussed on the basis of our proposed model and attributed to the overlapping of cascade zones induced by irradiation with dose rates above the critical value. The result of the pulsed irradiation showed that the incremental sheet resistance decreases with increasing the irradiation temperature, and the relaxation time was estimated at shorter than 200 is at room temperature. Higher irradiation temperature and lower dose rate than the critical value result in the lower resistivity CoSi2 layers.","PeriodicalId":39314,"journal":{"name":"Research Reports on Information Science and Electrical Engineering of Kyushu University","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1999-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"66745306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Energy Transport with Recoil Atoms on Deposited Energy Distribution in Silicon Irradiated with Energetic Ions 反冲原子能量输运对高能离子辐照硅中沉积能量分布的影响
Research Reports on Information Science and Electrical Engineering of Kyushu University Pub Date : 1997-09-26 DOI: 10.15017/1523855
Dong-Ju Bai, A. Baba, 馬場 昭好, A. Kenjo, 権丈 淳, T. Sadoh, 佐道 泰造, T. Sado, H. Nakashima, 中島 寛, H. Mori, T. Tsurushima, 鶴島 稔夫, ババ アキヨシ, アツシ ケンジョウ, タイゾウ サドウ, ヒロシ ナカシマ, モリ ヒロシ, トシオ ツルシマ
{"title":"Effect of Energy Transport with Recoil Atoms on Deposited Energy Distribution in Silicon Irradiated with Energetic Ions","authors":"Dong-Ju Bai, A. Baba, 馬場 昭好, A. Kenjo, 権丈 淳, T. Sadoh, 佐道 泰造, T. Sado, H. Nakashima, 中島 寛, H. Mori, T. Tsurushima, 鶴島 稔夫, ババ アキヨシ, アツシ ケンジョウ, タイゾウ サドウ, ヒロシ ナカシマ, モリ ヒロシ, トシオ ツルシマ","doi":"10.15017/1523855","DOIUrl":"https://doi.org/10.15017/1523855","url":null,"abstract":"Contribution of recoil atoms to the spatial distribution of total energy deposited by ions impinging in silicon is evaluated for 10-250 keV B and Ar ions. The calculated results are compared with the damaged layer thickness obtained by the ion-bombardment-enhanced selective etching, and the effect of energy transport with recoil atoms (recoil atom effect) on deposited energy distributions is discussed.","PeriodicalId":39314,"journal":{"name":"Research Reports on Information Science and Electrical Engineering of Kyushu University","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1997-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"66745344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Evaluation of Temporary Degradation in Quarter Micron MOSFET by Hydrogen Passivation of Boron 硼的氢钝化对四分之一微米MOSFET暂态降解的评价
Research Reports on Information Science and Electrical Engineering of Kyushu University Pub Date : 1996-09-27 DOI: 10.15017/1474936
K. Tsukamoto, T. Sadoh, A. Ikeda
{"title":"The Evaluation of Temporary Degradation in Quarter Micron MOSFET by Hydrogen Passivation of Boron","authors":"K. Tsukamoto, T. Sadoh, A. Ikeda","doi":"10.15017/1474936","DOIUrl":"https://doi.org/10.15017/1474936","url":null,"abstract":"","PeriodicalId":39314,"journal":{"name":"Research Reports on Information Science and Electrical Engineering of Kyushu University","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"66745230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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