Resistance Increase in CoSi_2 Layer by Irradiation Induced Damage

Q4 Engineering

Research Reports on Information Science and Electrical Engineering of Kyushu University Pub Date : 1999-03-26 DOI:10.15017/1500393

A. Matsushita, T. Sadoh, T. Tsurushima

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Abstract

Damage induced by ion irradiation in CoSi2 layers on Si02 films has been investigated. CoSi2 layers with 25 nm thickness were irradiation with 25 keV Ar+ ions to a dose of 2 x 1014 cm-2 with various dose rate. Pulsed irradiation with various duty ratios was also eniployed. After the irradiation, the change in sheet resistance of the layers was evaluated. The increase in the resistance increased with increasing the dose rate for samples irradiated with dose rates above the critical value of 7.5 x 1011 cm-2 s-1 at room temperature. The increase has been discussed on the basis of our proposed model and attributed to the overlapping of cascade zones induced by irradiation with dose rates above the critical value. The result of the pulsed irradiation showed that the incremental sheet resistance decreases with increasing the irradiation temperature, and the relaxation time was estimated at shorter than 200 is at room temperature. Higher irradiation temperature and lower dose rate than the critical value result in the lower resistivity CoSi2 layers.

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辐照损伤致CoSi_2层电阻增加

研究了离子辐照对二氧化硅薄膜上CoSi2层的损伤。用25 keV的Ar+离子照射25 nm厚度的CoSi2层，剂量为2 × 1014 cm-2，剂量率不同。还采用了不同占空比的脉冲辐照。辐照后，对各层的片阻变化进行了评价。在室温下，当辐照率高于7.5 × 1011 cm-2 s-1的临界值时，样品的电阻随剂量率的增加而增加。在我们提出的模型的基础上讨论了这种增加，并将其归因于剂量率高于临界值的辐照引起的级联区重叠。脉冲辐照的结果表明，随着辐照温度的升高，薄片电阻增量减小，室温下的弛豫时间小于200 s。高于临界值的辐照温度和低于临界值的剂量率导致CoSi2层的电阻率降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Research Reports on Information Science and Electrical Engineering of Kyushu University Engineering-Electrical and Electronic Engineering

CiteScore

0.20

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0.00%

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期刊介绍： Research Reports on Information Science and Electrical Engineering of Kyushu University provides quick publication in English or in Japanese on the most recent findings and achievements in the Faculty of Information Science and Electrical Engineering, Kyushu University.