Effect of Energy Transport with Recoil Atoms on Deposited Energy Distribution in Silicon Irradiated with Energetic Ions

Q4 Engineering

Research Reports on Information Science and Electrical Engineering of Kyushu University Pub Date : 1997-09-26 DOI:10.15017/1523855

Dong-Ju Bai, A. Baba, 馬場昭好, A. Kenjo, 権丈淳, T. Sadoh, 佐道泰造, T. Sado, H. Nakashima, 中島寛, H. Mori, T. Tsurushima, 鶴島稔夫, ババアキヨシ, アツシケンジョウ, タイゾウサドウ, ヒロシナカシマ, モリヒロシ, トシオツルシマ

引用次数: 0

Abstract

Contribution of recoil atoms to the spatial distribution of total energy deposited by ions impinging in silicon is evaluated for 10-250 keV B and Ar ions. The calculated results are compared with the damaged layer thickness obtained by the ion-bombardment-enhanced selective etching, and the effect of energy transport with recoil atoms (recoil atom effect) on deposited energy distributions is discussed.

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反冲原子能量输运对高能离子辐照硅中沉积能量分布的影响

在10-250 keV的B离子和Ar离子条件下，计算了反冲原子对离子撞击硅沉积总能量空间分布的贡献。将计算结果与离子轰击增强选择性刻蚀得到的损伤层厚度进行了比较，并讨论了反冲原子的能量输运(反冲原子效应)对沉积能量分布的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Research Reports on Information Science and Electrical Engineering of Kyushu University Engineering-Electrical and Electronic Engineering

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0.20

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0.00%

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期刊介绍： Research Reports on Information Science and Electrical Engineering of Kyushu University provides quick publication in English or in Japanese on the most recent findings and achievements in the Faculty of Information Science and Electrical Engineering, Kyushu University.