硼的氢钝化对四分之一微米MOSFET暂态降解的评价

{"title":"硼的氢钝化对四分之一微米MOSFET暂态降解的评价","authors":"K. Tsukamoto, T. Sadoh, A. Ikeda","doi":"10.15017/1474936","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":39314,"journal":{"name":"Research Reports on Information Science and Electrical Engineering of Kyushu University","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The Evaluation of Temporary Degradation in Quarter Micron MOSFET by Hydrogen Passivation of Boron\",\"authors\":\"K. Tsukamoto, T. Sadoh, A. Ikeda\",\"doi\":\"10.15017/1474936\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":39314,\"journal\":{\"name\":\"Research Reports on Information Science and Electrical Engineering of Kyushu University\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-09-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Research Reports on Information Science and Electrical Engineering of Kyushu University\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.15017/1474936\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Research Reports on Information Science and Electrical Engineering of Kyushu University","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15017/1474936","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}