Characterization of CoSi_2 Gate MOS Structure Formed by Ion Irradiation

Q4 Engineering

Research Reports on Information Science and Electrical Engineering of Kyushu University Pub Date : 1999-03-26 DOI:10.15017/1498421

A. Matsushita, Yiqun Zhang, T. Sadoh

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引用次数: 0

Abstract

CoSi2 gate MOS structures were formed by 20, 30, and 40 keV Si2+ Focused Ion Beam (FIB) irradiation to the 14/50 and 21 /75 nm Co/Si layers on 20 mii SiO2 films, and electrical properties of the structures were investigated. The results of the C-V measurement show that the flat-band shift increases with increasing the irradiation damage in SiO2 films. The leak current was also investigated by the I-V measurement, and it is concluded that the leak current was caused by the irradiation damage in SiO2 films and the Si-rich layers near the silicide/SiO2 interface formed by insufficient mixing of Co and Si atoms. In order to optimize the fabrication process of the CoSi2 gate MOS structures by the irradiation, the irradiation damage induced in SiO2 films should be minimized, and the sufficient energy should be deposited in Co/Si layers to induce the mixing of Co and Si atoms. For the 21/75 inn Co/Si sample irradiated with 40 keV Si2+ to 5x 1015 cm-2, the Fowler-Nordheirn tunneling current was observed, and flat-band shift was 1.6 V.

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离子辐照形成CoSi_2栅极MOS结构的表征

采用20、30和40 keV Si2+聚焦离子束(FIB)辐照20 mii SiO2薄膜上的14/50和21 /75 nm Co/Si层，形成CoSi2栅极MOS结构，并对结构的电学性能进行了研究。C-V测量结果表明，SiO2薄膜的平带位移随辐照损伤的增加而增加。通过对泄漏电流的I-V测量，得出泄漏电流是由于辐照损伤SiO2薄膜和Co和Si原子混合不足而形成的硅化物/SiO2界面附近的富Si层造成的。为了优化辐照制备CoSi2栅极MOS结构的工艺，应尽量减少在SiO2薄膜中引起的辐照损伤，并在Co/Si层中沉积足够的能量以诱导Co和Si原子的混合。以40 keV Si2+辐照至5 × 1015 cm-2，观察到21/75 inn Co/Si样品的Fowler-Nordheirn隧穿电流，平带位移为1.6 V。

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Research Reports on Information Science and Electrical Engineering of Kyushu University Engineering-Electrical and Electronic Engineering

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期刊介绍： Research Reports on Information Science and Electrical Engineering of Kyushu University provides quick publication in English or in Japanese on the most recent findings and achievements in the Faculty of Information Science and Electrical Engineering, Kyushu University.