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Proceedings. SOS/SOI Technology Workshop最新文献

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Two-dimensional finite element method process modeling of a silicon-on-insulator (SOI) process 绝缘体上硅(SOI)过程的二维有限元建模
Proceedings. SOS/SOI Technology Workshop Pub Date : 1988-10-03 DOI: 10.1109/SOI.1988.95426
S.M. Tyson, J. Benedetto, R. Reams, B. Rod
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引用次数: 0
Composition and microstructures of low dislocation content SIMOX structures 低位错含量SIMOX组织的组成和显微组织
Proceedings. SOS/SOI Technology Workshop Pub Date : 1988-10-03 DOI: 10.1109/SOI.1988.95394
H. Baumgart, A. van Ommen
{"title":"Composition and microstructures of low dislocation content SIMOX structures","authors":"H. Baumgart, A. van Ommen","doi":"10.1109/SOI.1988.95394","DOIUrl":"https://doi.org/10.1109/SOI.1988.95394","url":null,"abstract":"Summary form only given. Recent improvements have rendered SIMOX (separation by implanted oxygen) material suitable for direct fabrication of radiation-hard and high-performance CMOS devices in the superficial Si film. A persistent problem is the presence of dislocations with undesirably high densities. These residual dislocations are attributed to the vast amounts of Si point defects that are generated in the collision cascades during the high-dose oxygen implantation. By careful optimization of the implant conditions the dislocation content has been reduced by several orders of magnitude to less than 10/sup 5/ cm/sup -2/. For this low-dislocation-content SIMOX material, the superficial Si film exhibits ordering of the oxide precipitates. In the as-implanted structure the dislocations are confined to the lower part of the superficial Si film, where no oxide precipitate ordering occurred. Precipitate ordering and silicon point defects have been shown to play an important role in the establishment of the final microstructure during oxygen implantation.<<ETX>>","PeriodicalId":391934,"journal":{"name":"Proceedings. SOS/SOI Technology Workshop","volume":"52 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131987444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CMOS/SOS circuits for space applications 用于空间应用的CMOS/SOS电路
Proceedings. SOS/SOI Technology Workshop Pub Date : 1988-10-03 DOI: 10.1109/SOI.1988.95457
H. Veloric, R. Green
{"title":"CMOS/SOS circuits for space applications","authors":"H. Veloric, R. Green","doi":"10.1109/SOI.1988.95457","DOIUrl":"https://doi.org/10.1109/SOI.1988.95457","url":null,"abstract":"Summary form only given. The authors have investigated the capability of CMOS/SOS circuits fabricated in a 1.25- mu m DLM technology. The circuits included delay chains, a shift register, gate arrays, and a 8KX8 SRAM. Accurate circuit simulations were possible using the device parameters and current modeling procedures. The preradiation and postradiation performances of circuits were compared to their calculated capability. This included performance under transient radiation conditions. 64K SRAMS were fabricated with an access time under 20 ns. These circuits have demonstrated total dose tolerance in excess of 1 Mrad (Si) and transient upset of 5*10/sup 11/ rad (Si)/s.<<ETX>>","PeriodicalId":391934,"journal":{"name":"Proceedings. SOS/SOI Technology Workshop","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122770811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The multi-stable behaviour of SOI-NMOS transistors at low temperatures SOI-NMOS晶体管在低温下的多稳定行为
Proceedings. SOS/SOI Technology Workshop Pub Date : 1988-10-03 DOI: 10.1109/SOI.1988.95447
M. Tack, E. Simoen, X.Q. Li, C. Claeys, G. Declerck
{"title":"The multi-stable behaviour of SOI-NMOS transistors at low temperatures","authors":"M. Tack, E. Simoen, X.Q. Li, C. Claeys, G. Declerck","doi":"10.1109/SOI.1988.95447","DOIUrl":"https://doi.org/10.1109/SOI.1988.95447","url":null,"abstract":"Summary form only given. The operation of NMOS transistors made in laser-recrystallized SOI material has been investigated at both 77 K and 4 K. The back-gate voltage (and its history) turns out to have an important influence on the characteristics. It is found that by applying adequate pulses at the back gates, a variety of stable operating states, which are reflected in a variety of threshold voltages, can be established. This multistable behavior of SOI-NMOS transistors at low temperatures is illustrated for a bistable case at 77 K. By applying different back-gate conditions it is possible to obtain different high-threshold states. Stress measurements confirm the stability of the various states. A very similar behavior is also found for transistors operating at 4 K.<<ETX>>","PeriodicalId":391934,"journal":{"name":"Proceedings. SOS/SOI Technology Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130388877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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