Two-dimensional finite element method process modeling of a silicon-on-insulator (SOI) process

Abstract

Summary form only given. The authors have used the Finite-Element Diffusion Simulation System (FEDSS), an advanced two-dimensional process simulator, in the simulator of an SOI process technology. They have modeled the nFET portion of one variant of Harry Diamond Laboratories' CMOS process. All portions of the process that affect the nFET device characteristics have been included in the simulation. An input file describing the process was generated along with an initial finite-element mech upon which FEDSS will act. Each step of the process was then modeled, and the results were analyzed to ensure conformance to the process specifications. A cross-sectional profile and the corresponding two-dimensional doping contour characteristics resulted. These were then translated into expected parametric characteristics and compared to the characteristics of actual devices prepared by the process.<>