SOI-NMOS晶体管在低温下的多稳定行为

Proceedings. SOS/SOI Technology Workshop Pub Date : 1988-10-03 DOI:10.1109/SOI.1988.95447

M. Tack, E. Simoen, X.Q. Li, C. Claeys, G. Declerck

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引用次数: 3

摘要

只提供摘要形式。研究了激光再结晶SOI材料制备的NMOS晶体管在77 K和4 K下的工作特性。结果表明，后门电压(及其历史)对其特性有重要影响。研究发现，通过在后门施加足够的脉冲，可以建立各种稳定的工作状态，这些状态反映在各种阈值电压上。这种SOI-NMOS晶体管在低温下的多稳态行为在77 K双稳态情况下得到了说明。通过应用不同的后门条件，可以获得不同的高阈值状态。应力测量证实了各种状态的稳定性。对于工作在4k >的晶体管，也发现了非常相似的行为

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The multi-stable behaviour of SOI-NMOS transistors at low temperatures

Summary form only given. The operation of NMOS transistors made in laser-recrystallized SOI material has been investigated at both 77 K and 4 K. The back-gate voltage (and its history) turns out to have an important influence on the characteristics. It is found that by applying adequate pulses at the back gates, a variety of stable operating states, which are reflected in a variety of threshold voltages, can be established. This multistable behavior of SOI-NMOS transistors at low temperatures is illustrated for a bistable case at 77 K. By applying different back-gate conditions it is possible to obtain different high-threshold states. Stress measurements confirm the stability of the various states. A very similar behavior is also found for transistors operating at 4 K.<>

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Proceedings. SOS/SOI Technology Workshop

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