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2019 IEEE High Power Diode Lasers and Systems Conference (HPD)最新文献

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Simulation of the slow-axis beam properties of broad-area lasers and its use in the development of high-brightness sources 广域激光器慢轴光束特性的模拟及其在高亮度光源开发中的应用
2019 IEEE High Power Diode Lasers and Systems Conference (HPD) Pub Date : 2019-10-01 DOI: 10.1109/hpd48113.2019.8938668
C. Holly, S. McDougall
{"title":"Simulation of the slow-axis beam properties of broad-area lasers and its use in the development of high-brightness sources","authors":"C. Holly, S. McDougall","doi":"10.1109/hpd48113.2019.8938668","DOIUrl":"https://doi.org/10.1109/hpd48113.2019.8938668","url":null,"abstract":"The objective of this work is to demonstrate that the slow-axis beam properties of broad-area diode lasers can be predicted by numerical modeling and that the results guide design decisions in the semiconductor laser development. We present a numerical study for 6 different semiconductor laser single emitter designs and compare the computed results to experimental values. The devices differ in width of the contact opening, cavity length, position and depth of an index trench, and facet reflectivity.","PeriodicalId":384472,"journal":{"name":"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117076141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GPU-accelerated wave-optical simulation of beam-transformation system for high-power diode lasers 高功率二极管激光器光束变换系统的gpu加速波光模拟
2019 IEEE High Power Diode Lasers and Systems Conference (HPD) Pub Date : 2019-10-01 DOI: 10.1109/hpd48113.2019.8938673
M. Adams, S. Rauch, C. Holly, T. Bussek, M. Traub, D. Hoffmann
{"title":"GPU-accelerated wave-optical simulation of beam-transformation system for high-power diode lasers","authors":"M. Adams, S. Rauch, C. Holly, T. Bussek, M. Traub, D. Hoffmann","doi":"10.1109/hpd48113.2019.8938673","DOIUrl":"https://doi.org/10.1109/hpd48113.2019.8938673","url":null,"abstract":"In this work we present results of a GPU-accelerated wave-optical model for external-cavity diode lasers containing a beam transformation system to symmetrize the beam qualities in fast and slow axis. We show the rotation of the beam profile and analyze the feedback field into the diode. We further consider the effect of misaligned optical elements on the feedback field.","PeriodicalId":384472,"journal":{"name":"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126394489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High power diode laser pump sources in the 1.2-1.9 μm range 1.2 ~ 1.9 μm范围内的大功率二极管激光泵浦源
2019 IEEE High Power Diode Lasers and Systems Conference (HPD) Pub Date : 2019-10-01 DOI: 10.1109/hpd48113.2019.8938677
T. Tanbun-ek, Zuntu Xu, J. Mott
{"title":"High power diode laser pump sources in the 1.2-1.9 μm range","authors":"T. Tanbun-ek, Zuntu Xu, J. Mott","doi":"10.1109/hpd48113.2019.8938677","DOIUrl":"https://doi.org/10.1109/hpd48113.2019.8938677","url":null,"abstract":"The design, fabrication and characterization of high power diode laser pump sources covering the wavelength from 1.2-1.9 μm are described. Problem statements of designing a shorter wavelength of 1.2 μm using InGaAsP/InP are elucidated as mainly due to the low electron confinement at the heterobarrier and an alternative reliable combination of InGaAsP/AlInGaAs/InP is proposed. High power laser diodes with wavelength range from 1.28μm to 1.9μm can be reliably manufactured using a conventional InGaAsP/InP alloy system.","PeriodicalId":384472,"journal":{"name":"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115181758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Coherent beam combining of tapered amplifiers under QCW regime QCW体制下锥形放大器的相干光束组合
2019 IEEE High Power Diode Lasers and Systems Conference (HPD) Pub Date : 2019-10-01 DOI: 10.1109/hpd48113.2019.8938675
P. Albrodt, M. Niemeyer, P. Crump, J. Hamperl, F. Moron, P. Georges, G. Lucas-Leclin
{"title":"Coherent beam combining of tapered amplifiers under QCW regime","authors":"P. Albrodt, M. Niemeyer, P. Crump, J. Hamperl, F. Moron, P. Georges, G. Lucas-Leclin","doi":"10.1109/hpd48113.2019.8938675","DOIUrl":"https://doi.org/10.1109/hpd48113.2019.8938675","url":null,"abstract":"We demonstrate the coherent beam combining of four high-brightness tapered amplifiers in quasi continuous wave operation. A maximum combined power of 22.7 W was achieved with > 64 % combining efficiency. The beam quality of the combined output was increased with regard to the individual amplifiers thanks to the inherent clean-up of the superposition, resulting in a diffraction-limited power gt 20 W.","PeriodicalId":384472,"journal":{"name":"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125532402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High power single mode photonic integration 高功率单模光子集成
2019 IEEE High Power Diode Lasers and Systems Conference (HPD) Pub Date : 2019-10-01 DOI: 10.1109/hpd48113.2019.8938603
G. Morrison, L. Johansson, M. Mashanovitch, Bob B. Buckley, J. Sherman, K. Ottosson, H. Grant, P. Leisher, Jenna Campbell, F. Foong, D. Renner
{"title":"High power single mode photonic integration","authors":"G. Morrison, L. Johansson, M. Mashanovitch, Bob B. Buckley, J. Sherman, K. Ottosson, H. Grant, P. Leisher, Jenna Campbell, F. Foong, D. Renner","doi":"10.1109/hpd48113.2019.8938603","DOIUrl":"https://doi.org/10.1109/hpd48113.2019.8938603","url":null,"abstract":"High power single mode lasers with linewidths less than 500 kHz and CW output powers of 200 mW or higher have been integrated with additional optoelectronic components for value-added functionality at O-band, C-band and U-band wavelengths. Several different photonic integration techniques are described with results presented. High power functionalities including optical attenuation, amplification, wavelength multiplexing, and wavelength tuning at these high powers are described.","PeriodicalId":384472,"journal":{"name":"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126611595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
The impact of carrier recombination and loss processes on high efficiency and high power lasers 载流子复合和损耗过程对高效高功率激光器的影响
2019 IEEE High Power Diode Lasers and Systems Conference (HPD) Pub Date : 2019-10-01 DOI: 10.1109/hpd48113.2019.8938683
S. Sweeney
{"title":"The impact of carrier recombination and loss processes on high efficiency and high power lasers","authors":"S. Sweeney","doi":"10.1109/hpd48113.2019.8938683","DOIUrl":"https://doi.org/10.1109/hpd48113.2019.8938683","url":null,"abstract":"This paper considers how issues related to fundamental recombination processes occurring in semiconductor lasers limits their efficiency and output powers and the influence of this on system design. As part of this, the paper considers common assumptions regarding ideal laser behavior and the extent to which these no longer apply under typical laser operating conditions.","PeriodicalId":384472,"journal":{"name":"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129111339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact module for high power coherent beam combining of tapered amplifiers 用于锥形放大器的高功率相干光束组合的紧凑模块
2019 IEEE High Power Diode Lasers and Systems Conference (HPD) Pub Date : 2019-10-01 DOI: 10.1109/hpd48113.2019.8938676
J. Hamperl, P. Albrodt, P. Georges, G. Lucas-Leclin
{"title":"Compact module for high power coherent beam combining of tapered amplifiers","authors":"J. Hamperl, P. Albrodt, P. Georges, G. Lucas-Leclin","doi":"10.1109/hpd48113.2019.8938676","DOIUrl":"https://doi.org/10.1109/hpd48113.2019.8938676","url":null,"abstract":"We describe the design and evaluation of a small footprint interferometer for the coherent beam combining of high-brightness semiconductor amplifiers. The setup relies on off-the-shelf commercial devices only. The combined output power reaches 9.7 W in a nearly diffraction-limited beam.","PeriodicalId":384472,"journal":{"name":"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122153261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
[Copyright notice] (版权)
2019 IEEE High Power Diode Lasers and Systems Conference (HPD) Pub Date : 2019-10-01 DOI: 10.1109/hpd48113.2019.8938601
{"title":"[Copyright notice]","authors":"","doi":"10.1109/hpd48113.2019.8938601","DOIUrl":"https://doi.org/10.1109/hpd48113.2019.8938601","url":null,"abstract":"","PeriodicalId":384472,"journal":{"name":"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)","volume":"43 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133037092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Approaches for higher power in GaAs-based broad area diode lasers 高功率gaas基广域二极管激光器的方法
2019 IEEE High Power Diode Lasers and Systems Conference (HPD) Pub Date : 2019-10-01 DOI: 10.1109/hpd48113.2019.8938605
S. Arslan, G. Erbert, A. Boni, M. Wilkens, A. Maaßdorf, J. Fricke, A. Ginolas, P. Crump
{"title":"Approaches for higher power in GaAs-based broad area diode lasers","authors":"S. Arslan, G. Erbert, A. Boni, M. Wilkens, A. Maaßdorf, J. Fricke, A. Ginolas, P. Crump","doi":"10.1109/hpd48113.2019.8938605","DOIUrl":"https://doi.org/10.1109/hpd48113.2019.8938605","url":null,"abstract":"We present here a comparison of design approaches for improved continuous wave electro-optical performance in GaAs-based high power broad area diode lasers emitting at 970 nm. Diode lasers with $90 {mu } mathrm {m}$ stripe width based on established asymmetric large optical cavity designs achieve high peak conversion efficiency (68% at 5 W for 3 mm resonator length) but efficiency drops rapidly with power. In spite of halved electrical and thermal resistance, devices with longer resonators (6 mm) operate with only marginally improved efficiency and power (efficiency at 12 W increases from 57 to 59%, peak power increases from 13 to 14 W). In contrast, development in epitaxial design enables strong improvement in power and efficiency at high power. Specifically, recent progress in extreme double and triple asymmetric epitaxial designs have enabled devices with $90 {mu } mathrm {m}$ stripe width and 4 mm resonator length to improve their efficiency at 12 W output power from 56% to 66%, with their peak (saturation) power rising from 14 to 19 W.","PeriodicalId":384472,"journal":{"name":"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130616550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
High power horizontal cavity surface-emitting InGaN superluminescent diode 高功率水平腔面发射InGaN超发光二极管
2019 IEEE High Power Diode Lasers and Systems Conference (HPD) Pub Date : 2019-10-01 DOI: 10.1109/hpd48113.2019.8938606
Juan S. D. Morales, R. Cahill, B. Corbett
{"title":"High power horizontal cavity surface-emitting InGaN superluminescent diode","authors":"Juan S. D. Morales, R. Cahill, B. Corbett","doi":"10.1109/hpd48113.2019.8938606","DOIUrl":"https://doi.org/10.1109/hpd48113.2019.8938606","url":null,"abstract":"In this work, a high power horizontal cavity surfaceemitting InGaN superluminescent diode is demonstrated. The amplified spontaneous emission is accomplished by angling the facets at 45° producing total internal reflection and surface emission on the substrate side. This novel structure allows total optical peak power above 2 W during pulsed mode operation. This optical peak power is the highest reported for a superluminescent diode based on GaN. Also, the electroluminescence spectrum for current above the superluminescent threshold shows a smooth emission with a full width at half maximum of 6 nm centered in 416 nm.","PeriodicalId":384472,"journal":{"name":"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)","volume":"231 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121112716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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