High power diode laser pump sources in the 1.2-1.9 μm range

2019 IEEE High Power Diode Lasers and Systems Conference (HPD) Pub Date : 2019-10-01 DOI:10.1109/hpd48113.2019.8938677

T. Tanbun-ek, Zuntu Xu, J. Mott

引用次数: 3

Abstract

The design, fabrication and characterization of high power diode laser pump sources covering the wavelength from 1.2-1.9 μm are described. Problem statements of designing a shorter wavelength of 1.2 μm using InGaAsP/InP are elucidated as mainly due to the low electron confinement at the heterobarrier and an alternative reliable combination of InGaAsP/AlInGaAs/InP is proposed. High power laser diodes with wavelength range from 1.28μm to 1.9μm can be reliably manufactured using a conventional InGaAsP/InP alloy system.

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1.2 ~ 1.9 μm范围内的大功率二极管激光泵浦源

介绍了波长为1.2 ~ 1.9 μm的高功率二极管激光泵浦源的设计、制造和特性。指出了利用InGaAsP/InP设计1.2 μm波长较短的问题主要是由于其在异势垒处的电子约束较低，并提出了一种可靠的InGaAsP/AlInGaAs/InP的替代组合。使用传统的InGaAsP/InP合金体系可以可靠地制造波长范围为1.28 ~ 1.9μm的高功率激光二极管。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 IEEE High Power Diode Lasers and Systems Conference (HPD)

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