{"title":"1.2 ~ 1.9 μm范围内的大功率二极管激光泵浦源","authors":"T. Tanbun-ek, Zuntu Xu, J. Mott","doi":"10.1109/hpd48113.2019.8938677","DOIUrl":null,"url":null,"abstract":"The design, fabrication and characterization of high power diode laser pump sources covering the wavelength from 1.2-1.9 μm are described. Problem statements of designing a shorter wavelength of 1.2 μm using InGaAsP/InP are elucidated as mainly due to the low electron confinement at the heterobarrier and an alternative reliable combination of InGaAsP/AlInGaAs/InP is proposed. High power laser diodes with wavelength range from 1.28μm to 1.9μm can be reliably manufactured using a conventional InGaAsP/InP alloy system.","PeriodicalId":384472,"journal":{"name":"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"High power diode laser pump sources in the 1.2-1.9 μm range\",\"authors\":\"T. Tanbun-ek, Zuntu Xu, J. Mott\",\"doi\":\"10.1109/hpd48113.2019.8938677\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design, fabrication and characterization of high power diode laser pump sources covering the wavelength from 1.2-1.9 μm are described. Problem statements of designing a shorter wavelength of 1.2 μm using InGaAsP/InP are elucidated as mainly due to the low electron confinement at the heterobarrier and an alternative reliable combination of InGaAsP/AlInGaAs/InP is proposed. High power laser diodes with wavelength range from 1.28μm to 1.9μm can be reliably manufactured using a conventional InGaAsP/InP alloy system.\",\"PeriodicalId\":384472,\"journal\":{\"name\":\"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/hpd48113.2019.8938677\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/hpd48113.2019.8938677","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High power diode laser pump sources in the 1.2-1.9 μm range
The design, fabrication and characterization of high power diode laser pump sources covering the wavelength from 1.2-1.9 μm are described. Problem statements of designing a shorter wavelength of 1.2 μm using InGaAsP/InP are elucidated as mainly due to the low electron confinement at the heterobarrier and an alternative reliable combination of InGaAsP/AlInGaAs/InP is proposed. High power laser diodes with wavelength range from 1.28μm to 1.9μm can be reliably manufactured using a conventional InGaAsP/InP alloy system.
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