{"title":"载流子复合和损耗过程对高效高功率激光器的影响","authors":"S. Sweeney","doi":"10.1109/hpd48113.2019.8938683","DOIUrl":null,"url":null,"abstract":"This paper considers how issues related to fundamental recombination processes occurring in semiconductor lasers limits their efficiency and output powers and the influence of this on system design. As part of this, the paper considers common assumptions regarding ideal laser behavior and the extent to which these no longer apply under typical laser operating conditions.","PeriodicalId":384472,"journal":{"name":"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The impact of carrier recombination and loss processes on high efficiency and high power lasers\",\"authors\":\"S. Sweeney\",\"doi\":\"10.1109/hpd48113.2019.8938683\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper considers how issues related to fundamental recombination processes occurring in semiconductor lasers limits their efficiency and output powers and the influence of this on system design. As part of this, the paper considers common assumptions regarding ideal laser behavior and the extent to which these no longer apply under typical laser operating conditions.\",\"PeriodicalId\":384472,\"journal\":{\"name\":\"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/hpd48113.2019.8938683\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/hpd48113.2019.8938683","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The impact of carrier recombination and loss processes on high efficiency and high power lasers
This paper considers how issues related to fundamental recombination processes occurring in semiconductor lasers limits their efficiency and output powers and the influence of this on system design. As part of this, the paper considers common assumptions regarding ideal laser behavior and the extent to which these no longer apply under typical laser operating conditions.