{"title":"高功率水平腔面发射InGaN超发光二极管","authors":"Juan S. D. Morales, R. Cahill, B. Corbett","doi":"10.1109/hpd48113.2019.8938606","DOIUrl":null,"url":null,"abstract":"In this work, a high power horizontal cavity surfaceemitting InGaN superluminescent diode is demonstrated. The amplified spontaneous emission is accomplished by angling the facets at 45° producing total internal reflection and surface emission on the substrate side. This novel structure allows total optical peak power above 2 W during pulsed mode operation. This optical peak power is the highest reported for a superluminescent diode based on GaN. Also, the electroluminescence spectrum for current above the superluminescent threshold shows a smooth emission with a full width at half maximum of 6 nm centered in 416 nm.","PeriodicalId":384472,"journal":{"name":"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)","volume":"231 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High power horizontal cavity surface-emitting InGaN superluminescent diode\",\"authors\":\"Juan S. D. Morales, R. Cahill, B. Corbett\",\"doi\":\"10.1109/hpd48113.2019.8938606\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, a high power horizontal cavity surfaceemitting InGaN superluminescent diode is demonstrated. The amplified spontaneous emission is accomplished by angling the facets at 45° producing total internal reflection and surface emission on the substrate side. This novel structure allows total optical peak power above 2 W during pulsed mode operation. This optical peak power is the highest reported for a superluminescent diode based on GaN. Also, the electroluminescence spectrum for current above the superluminescent threshold shows a smooth emission with a full width at half maximum of 6 nm centered in 416 nm.\",\"PeriodicalId\":384472,\"journal\":{\"name\":\"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)\",\"volume\":\"231 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/hpd48113.2019.8938606\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE High Power Diode Lasers and Systems Conference (HPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/hpd48113.2019.8938606","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High power horizontal cavity surface-emitting InGaN superluminescent diode
In this work, a high power horizontal cavity surfaceemitting InGaN superluminescent diode is demonstrated. The amplified spontaneous emission is accomplished by angling the facets at 45° producing total internal reflection and surface emission on the substrate side. This novel structure allows total optical peak power above 2 W during pulsed mode operation. This optical peak power is the highest reported for a superluminescent diode based on GaN. Also, the electroluminescence spectrum for current above the superluminescent threshold shows a smooth emission with a full width at half maximum of 6 nm centered in 416 nm.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
