Advanced High-Power Lasers and Applications最新文献_第7页

Ultrafast distributed feedback dye lasers 超快分布反馈染料激光器

Advanced High-Power Lasers and Applications Pub Date : 2000-04-03 DOI: 10.1117/12.380950

N. Khan

{"title":"Ultrafast distributed feedback dye lasers","authors":"N. Khan","doi":"10.1117/12.380950","DOIUrl":"https://doi.org/10.1117/12.380950","url":null,"abstract":"A distributed feedback dye laser (DFDL) was experimentally studied to determine the utmost lower limit on ultrafast pulse generation. The ultimate aim was to determine its suitability as a cheaper high peak power laser source. The dye cell was excited by the second harmonic of a laboratory built cavity dumped passively q switched and modelocked Nd:YAG Laser to induce temperature phase grating in dye solution. Different features studied include threshold conditions, pulse shortening, by reducing cavity length, polymerization limitations, simultaneous induction of multiple superimposed gratings, line narrowing, polarization, temporal and spectral characteristics. The pump polarization affect on dynamic gratings and threshold conditions indicated the number of lasing lines (maximum nine) or intensity of a single line depends upon the state of pump polarization (SOP). Various types of tuning methods such as Bragg index, refractive index, half angle and state of pump polarization were tested for improved divergence, bandwidth, line-width and wider spectral ranges. The combined effect of coherence length and SOP of excitation laser on emission of multiple lines was studied without using external gratings. The results of this critical and contemporary work on DFDL is in agreement with most of the published results and opens a new era for their potential suitability in optical communication, sensing and photonic devices.","PeriodicalId":375593,"journal":{"name":"Advanced High-Power Lasers and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116089287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Generation of a high-power radially polarized beam 产生高功率径向偏振光

Advanced High-Power Lasers and Applications Pub Date : 2000-04-03 DOI: 10.1117/12.380954

V. P. Yakunin, A. Nesterov, V. Niziev

引用次数: 28

Defects and degradation of InGa(Al)As/GaAs high-power diode lasers InGa(Al)As/GaAs高功率二极管激光器的缺陷与退化

Advanced High-Power Lasers and Applications Pub Date : 2000-04-03 DOI: 10.1117/12.380936

N. Wiedmann, J. Jandeleit, D. Hoffmann, P. Loosen, R. Poprawe

{"title":"Defects and degradation of InGa(Al)As/GaAs high-power diode lasers","authors":"N. Wiedmann, J. Jandeleit, D. Hoffmann, P. Loosen, R. Poprawe","doi":"10.1117/12.380936","DOIUrl":"https://doi.org/10.1117/12.380936","url":null,"abstract":"High power diode lasers are mainly used for applications such as pumping of solid state lasers, direct material processing (i.e. welding, soldering, hardening, annealing) and printing. The outstanding characteristics of diode lasers are their compactness, their high efficiency and their reliability accompanied by a long lifetime. Since high power diode lasers are composed of an array of single emitters (multi-stripe or broad area) their lifetimes can widely differ from those of the corresponding single emitters. The lifetime of high power diode lasers depends on the driving current and the cooling temperature they are run with. Their degradation is caused by different degradation mechanisms which have not been definitively clarified up to now. Defects and degradation of InGa(Al)As/GaAs DQW diode laser bars mounted on copper micro channel heat sinks were investigated. The analytical techniques used for this investigation are optical microscopy, scanning electron microscopy, white light interference microscopy. The high power diode lasers were investigatively accompanied through the different phases of their setup process (i.e. mounting, characterization and burn-in). Afterwards a long-term lifetest was performed. The influence of a raised current and a raised cooling temperature on their degradation was investigated respectively. Changes in surface morphology and surface composition of the facets were detected as well as changes in the threshold current, slope efficiency and emission spectrum. Due to the degradation the threshold current increases and the slope efficiency decreases while the emission wavelengths are shifted to higher values showing a broadened spectral width. Formation of micro cracks and dislocations through the facets was also observed. The influence of these changes on performance and lifetime of the high power diode lasers will be discussed.","PeriodicalId":375593,"journal":{"name":"Advanced High-Power Lasers and Applications","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121019187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Carbon monoxide lasers: problems of physics and engineering 一氧化碳激光器:物理和工程问题

Advanced High-Power Lasers and Applications Pub Date : 2000-04-03 DOI: 10.1117/12.380913

A. Ionin

引用次数: 3

Vector analysis of fast focusing by hyperbolic and spherical lenses 双曲和球面透镜快速聚焦的矢量分析

Advanced High-Power Lasers and Applications Pub Date : 2000-04-03 DOI: 10.1117/12.380869

A. Shih, C. Shih

引用次数: 0

High-average-power high-beam-quality vis-UV sources based on kinetically enhanced copper vapor lasers 基于动力增强铜蒸气激光器的高平均功率高光束质量可见-紫外光源

Advanced High-Power Lasers and Applications Pub Date : 2000-04-03 DOI: 10.1117/12.380892

D. Brown, M. Withford, R. Carman, R. Mildren, J. Piper

{"title":"High-average-power high-beam-quality vis-UV sources based on kinetically enhanced copper vapor lasers","authors":"D. Brown, M. Withford, R. Carman, R. Mildren, J. Piper","doi":"10.1117/12.380892","DOIUrl":"https://doi.org/10.1117/12.380892","url":null,"abstract":"Investigations of the factors that limit average power scaling of elemental copper vapor lasers (CVLs) have demonstrated that decay of the electron density in the interpulse period is critical in restricting pulse repetition rate and laser aperture scaling. We have recently developed the 'kinetic enhancement' (or KE) technique to overcome these limitations, whereby optimal plasma conditions are engineered using low concentrations of HCl/H2 additive gases in the Ne buffer. Dissociative electron attachment of HCl and subsequent mutual neutralization of Cl- and Cu+ promote rapid plasma relaxation and fast recovery of Cu densities, permitting operation at elevated Cu densities and pulse rates for given apertures. Using this approach, we have demonstrated increases in output power and efficiency of a factor of 2 or higher over conventional CVLs of the same size. For a 38 mm- bore KE-CVL, output powers up to 150 W have been achieved at 22 kHz, corresponding to record specific powers (80 mW/cm3) for such a 'small/medium-scale' device. In addition, kinetic enhancement significantly extends the gain duration and restores gain on-axis, even for high pulse rates, thereby promoting substantial increases (5 - 10x) in high- beam-quality power levels when operating with unstable resonators. This has enabled us to achieve much higher powers in second-harmonic generation from the visible copper laser output to the ultraviolet (e.g. 5 W at 255 nm from a small- scale KE-CVL). Our approach to developing KE-CVLs including computer modeling and experimental studies will be reviewed, and most recent results in pulse rate scaling and scaling of high-beam-quality power using oscillator-amplifier configurations, will be presented.","PeriodicalId":375593,"journal":{"name":"Advanced High-Power Lasers and Applications","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127012183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Transformation of the ytterbium laser spectrum with pulsed selective pumping 脉冲选择性泵浦对镱激光光谱的变换

Advanced High-Power Lasers and Applications Pub Date : 2000-04-03 DOI: 10.1117/12.380946

Y. Senatsky, N. Bykovsky, D. Ivanov, S. I. Mikhailov, A. R. Petrykhin, I. Zubarev

{"title":"Transformation of the ytterbium laser spectrum with pulsed selective pumping","authors":"Y. Senatsky, N. Bykovsky, D. Ivanov, S. I. Mikhailov, A. R. Petrykhin, I. Zubarev","doi":"10.1117/12.380946","DOIUrl":"https://doi.org/10.1117/12.380946","url":null,"abstract":"The Yb-doped crystals and glasses present promising active media for high power lasers. These media are typical of broad gain linewidths -- near 10 nm for Yb:YAG and 100 nm for glasses. The experiments have been performed on pumping Yb- doped YAG and glass samples in a cavity by Nd:YAG laser at 0.94 micrometer. The pumping intensity was 105 divided by 106 W/cm2, stored energy density, 1 - 2 J/cm3. For Yb:YAG simultaneous oscillations have been produced at transitions near 1.03 and 1.05 micrometer. The spectral width for both bands reached 3 nm. There was established a competitive character of lasing at these transitions displayed in opposite amplitude modulation of the corresponding oscillation envelopes. The laser spectrum transformation using the interconnection of 1.03 and 1.05 micrometer transitions is discussed. When pumping the Yb-doped silicate glass there were registered the spectra near 1.03, 1.04 and 1.06 micrometer with the total width over 40 nm. A method of the laser spectrum transformation based on the stored energy transfer over inhomogeneously broadened emission line is proposed for Yb glasses. The expected range of the spectrum transformation makes several tens of nm, the transfer rate 103 - 104s-1. The obtained results are of interest for the creation of pulse-repetitive laser sources with the spectrum varying from shot to shot.","PeriodicalId":375593,"journal":{"name":"Advanced High-Power Lasers and Applications","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128146458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Noncritically phase-matched UV generation in GdYCOB crystal GdYCOB晶体中非临界相匹配紫外的产生

Advanced High-Power Lasers and Applications Pub Date : 2000-04-03 DOI: 10.1117/12.380916

H. Furuya, H. Nakao, I. Yamada, K. Murase, M. Yoshimura, Y. Mori, T. Sasaki

引用次数: 1

Novel high-power red laser diode transverse structure 新型大功率红色激光二极管横向结构

Advanced High-Power Lasers and Applications Pub Date : 2000-04-03 DOI: 10.1117/12.380901

M. Dumitrescu, S. Orsila, P. Savolainen, M. Toivonen, M. Pessa

{"title":"Novel high-power red laser diode transverse structure","authors":"M. Dumitrescu, S. Orsila, P. Savolainen, M. Toivonen, M. Pessa","doi":"10.1117/12.380901","DOIUrl":"https://doi.org/10.1117/12.380901","url":null,"abstract":"In the already classical separate confinement (SCH) quantum well (QW) semiconductor laser diode structures many of the desired performances are contradictory coupled through the structural parameters -- i.e. a structural parameter modification leading to the improvement of one or more laser performances will produce the deterioration of at least another performance. Based on an analysis of this contradictory coupling a novel transverse layer structure that alleviates the problem and enables improved laser diode performances is proposed. Both optical simulation and a fully self-consistent model are used in a design optimization methodology and simple evaluation and optimization criteria for the new transverse structure are derived. A number of the analyzed high-power edge-emitting GazIn1-zP/(AlxGa1- x)yIn1-yP/GaAs quantum well laser structures were prepared using all-solid-source molecular beam epitaxy (SS-MBE) for layer growth and remarkable performances were obtained (continuous wave output powers of 3 W at 670 nm, 2 W at 650 nm, and 1 W at 630 nm; threshold current densities of 350 - 450 Angstrom/cm2 for 670 nm, 500 - 540 A/cm2 for 650 nm, and 600 - 680 A/cm2 for 630 nm). Although only a few of the optimization features were implemented the good agreement between measurements and simulations for the prepared structures indicate that significant performance improvements -- predicted by the simulations -- are still possible.","PeriodicalId":375593,"journal":{"name":"Advanced High-Power Lasers and Applications","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124649171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

AlGaAs/InGaAs/GaAs high-power 1060-nm diode lasers with reduced fast axis divergence AlGaAs/InGaAs/GaAs高功率1060nm二极管激光器，轴散度降低

Advanced High-Power Lasers and Applications Pub Date : 2000-04-03 DOI: 10.1117/12.380931

Igor D. Zalevsky, V. V. Bezotosny, E. I. Davidova, V. P. Koniaev, A. Marmaluk, A. Padalitsa, V. A. Shishkin

引用次数: 0