Proceedings of First International Caracas Conference on Devices, Circuits and Systems最新文献_第3页

New approach to the current measuring system solution 现有测量系统解决方案的新方法

Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499154

J. Lastowiecki

引用次数: 2

The case for cryoelectronics 低温电子学的案例

Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499107

R. Anderson

引用次数: 0

An analytical model for the I-V and C-V characteristics of a non-abrupt n/p-InP epitaxial junction grown by metal organic vapor phase epitaxy 金属有机气相外延生长的n/p-InP非突变外延结的I-V和C-V特性分析模型

Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499180

D. Serrano, P. Cova

{"title":"An analytical model for the I-V and C-V characteristics of a non-abrupt n/p-InP epitaxial junction grown by metal organic vapor phase epitaxy","authors":"D. Serrano, P. Cova","doi":"10.1109/ICCDCS.1995.499180","DOIUrl":"https://doi.org/10.1109/ICCDCS.1995.499180","url":null,"abstract":"A new approach to analyze the current-voltage (I-V) and 1 MHz capacitance-voltage (C-V) characteristics of a non-abrupt p/n-InP epitaxial junction was developed. The theoretical model took into account the diffusion of shallow-dopant impurities during the fabrication process and also provide a non-destructive way to determine shallow-dopant profiles in p/n-semiconductor epitaxial junctions. Our results suggest that the I-V and C-V characteristics are independent of the diffusion of shallow-dopant impurities in the n-side for a n/p-InP epitaxial junction with a donor impurity concentration N/sub A/=10/sup 18/ cm/sup -3/. Moreover, for an acceptor impurity concentration is N/sub D//spl ges/10/sup -3/ N/sub A/, the C-V characteristics can not be analyzed in terms of the Mott-Schottky equation. The verification for our theory was done by comparing the calculated values of the capacitance at 1 MHz and electrical current for a n/p-InP epitaxial junction with those reported in the literature and extracted from the I-V data. Excellent agreement between these values strongly support the validity of our theoretical expression for the I-V and 1 MHz C-V characteristics.","PeriodicalId":373470,"journal":{"name":"Proceedings of First International Caracas Conference on Devices, Circuits and Systems","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128239926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A dual-tone multifrequency generator based on switched-capacitor filtering 基于开关电容滤波的双音多频发生器

Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499108

J. Finol, S.G. Rodrigues

引用次数: 0

Load effects on DC-DC converters for simultaneous speed and voltage control by the load in asynchronous generation 异步发电中负载对DC-DC变换器同时控制速度和电压的影响

Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499159

C. A. Portolann, F. Farret, R. Machado

引用次数: 1

INTERFACE MODULE FOR REGULATED CURRENT PULSE DELIVERY IN GASTRO-THORACIC STIMULATION 接口模块用于调节电流脉冲传送在胃胸刺激

Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499161

O. Escalona, J. Anderson, G. Dempsey

引用次数: 1

Defect level induced peak in the capacitance-voltage plots of Al/n-GaAs/In and W/n-GaAs/In devices fabricated by RF sputtering 射频溅射制备Al/n-GaAs/ in器件和W/n-GaAs/ in器件的电容电压图中缺陷电平诱导峰

Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499120

A. Singh, L. Velásquez

{"title":"Defect level induced peak in the capacitance-voltage plots of Al/n-GaAs/In and W/n-GaAs/In devices fabricated by RF sputtering","authors":"A. Singh, L. Velásquez","doi":"10.1109/ICCDCS.1995.499120","DOIUrl":"https://doi.org/10.1109/ICCDCS.1995.499120","url":null,"abstract":"The 1 MHz capacitance-voltage (C-V) measurements were performed on five Schottky diodes (four W/n-GaAs/In diodes and one Al/n-GaAs/In diode) fabricated by rf sputtering, and one Al/n-GaAs/In diode fabricated by thermal deposition. A peak in the 1 MHz capacitance-voltage (C-V) plots and a minima in the 1 MHz C/sup -2/-V plots of all diodes fabricated by sputtering were observed. Such a peak or minima was absent in the diode fabricated by thermal evaporation. Using the Chan and Shih model, the series resistance of the devices was estimated from the value C/sup -2/ at minima of the C/sup -2/-V plots which was 18-20 times greater than the actual value of 3.6 /spl Omega/ determined from the I-V characteristics of the In/n-GaAs/In ohmic structure fabricated on the same substrate used in the device fabrication. This fact provided a clear evidence that the minima in the C/sup -2/-V plots of diodes fabricated by sputtering was not due to series resistance, but was related to the process of fabrication of the metal rectifying contact by rf sputtering. The observed peak in the C-V plot may be caused by the presence of high concentration acceptor type traps induced by rf sputtering near the metal/n-GaAs interface, during sputter etching of the polished surface of n-GaAs or sputter deposition of the metal. By comparing the linear portions of the C/sup -/2-V plots of diodes fabricated by sputtering with the Mott-Schottky plot of the diode fabricated by thermal method, some estimates of the concentration of the sputter induced donor defects is also made.","PeriodicalId":373470,"journal":{"name":"Proceedings of First International Caracas Conference on Devices, Circuits and Systems","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134367336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Supplying power at low voltage (3.3 V) 低压供电(3.3 V)

Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499153

J. Uceda, J. Cobos

引用次数: 5

Reversible image sequence compression method using motion estimation with interpolation 利用运动估计插值的可逆图像序列压缩方法

Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499166

L. Urbano, F. D'Alvano, R. Barreto, J. Regidor, C. Bruscianelli, R. Duvauferrier

{"title":"Reversible image sequence compression method using motion estimation with interpolation","authors":"L. Urbano, F. D'Alvano, R. Barreto, J. Regidor, C. Bruscianelli, R. Duvauferrier","doi":"10.1109/ICCDCS.1995.499166","DOIUrl":"https://doi.org/10.1109/ICCDCS.1995.499166","url":null,"abstract":"A technique of Image Sequence Compression, whose application domain is medicine, is proposed in this work. It is an adaptation of the Walker-Rao scheme to an interpolation environment which preserves its fundamental advantage: the recursive motion estimation algorithm avoids sending the displacement vectors from transmitter to receiver, because they are obtained similarly at both ends. The parameters of the algorithm were varied in the tests, employing the zero order entropy of the error image as an indicator of the ideally achievable compression rate. This figure of merit was influenced by the application sequence of the decorrelation schemes. For all the processed sequences, the zero order entropy value of the error image in the intraframe-interframe case was lower than in the interframe-intraframe case. However, those results are inferior to the ones obtained just using interframe compression with motion compensation, which in turn, are worse than plain unregistered interpolation. These findings coincide significantly with evaluations done by other researchers, even though the improvements proposed by them were implemented in this work.","PeriodicalId":373470,"journal":{"name":"Proceedings of First International Caracas Conference on Devices, Circuits and Systems","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134439660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Synthesis of dynamic feedback controllers for uncertain linear systems 不确定线性系统动态反馈控制器的综合

Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499152

W. Colmenares, O. Pérez, D. Henrion, J. Bernussou, E. Granado

引用次数: 1