Proceedings of First International Caracas Conference on Devices, Circuits and Systems最新文献_第7页

A comparison of three adaptive algorithms used to improve evoked potential estimation 改进诱发电位估计的三种自适应算法的比较

Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499168

M. Stefanelli, T. de Perez, F. D'Alvano, J. Regidor, M. Juanatey

{"title":"A comparison of three adaptive algorithms used to improve evoked potential estimation","authors":"M. Stefanelli, T. de Perez, F. D'Alvano, J. Regidor, M. Juanatey","doi":"10.1109/ICCDCS.1995.499168","DOIUrl":"https://doi.org/10.1109/ICCDCS.1995.499168","url":null,"abstract":"The objective of this work is to compare three adaptive algorithms used in a proposed noise canceller with an enhanced reference signal, to improve the Evoked Potential (EP) estimation. EEG averaging is a common method to obtain EP. A disadvantage of this method is the large number of stimuli needed to get a good visualization of one useful average EP. We use a two channel adaptive canceller to obtain single stimulus evoked potentials. The canceller reference signal is the quasi-periodic extension of an average EP over a few periods, aligned by the maximization of its cross-correlation with the primary signal. The Least Mean Square (LMS), Carlos Davila (CDA) and Recursive Modified Gram-Schmidt (RMGS) algorithms were used to update filter weights. To test the different algorithms, the described technique was applied to simulated signals based on actual registers obtained from visually stimulated subjects. The proposed adaptive cancellation technique provides, with fewer stimuli, individual estimates, allowing the analysis of the EPs variability between stimuli. The fastest convergence rate and best estimate were obtained with the CDA and RMGS algorithms. CDA stands out for its simplicity.","PeriodicalId":373470,"journal":{"name":"Proceedings of First International Caracas Conference on Devices, Circuits and Systems","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133413858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analysis and design of a zero voltage switching dc-to-ac inverter 零电压直流-交流开关逆变器的分析与设计

Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499127

A. Khan, R. Narayanan, I. Batarseh, J. Liou, A. Kussay Kayyali

引用次数: 1

New short-circuit protection for voltage regulator 新型稳压器短路保护装置

Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499162

B. Allocca

引用次数: 0

ADPCM compression of speech signals using a frequency domain LMS algorithm ADPCM采用频域LMS算法压缩语音信号

Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499167

R. Badra, F. D'Alvano, T. de Perez

引用次数: 0

Numerical simulation of the electrical current transport in a metal-ultra thin insulating layer-InP epitaxial layer junction 金属-超薄绝缘层- inp外延层结中电流输运的数值模拟

Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499179

R. Resplandor, P. Cova

{"title":"Numerical simulation of the electrical current transport in a metal-ultra thin insulating layer-InP epitaxial layer junction","authors":"R. Resplandor, P. Cova","doi":"10.1109/ICCDCS.1995.499179","DOIUrl":"https://doi.org/10.1109/ICCDCS.1995.499179","url":null,"abstract":"A new approach to the numerical simulation of the electrical current transport in a tunnel MIS epitaxial diode was developed. The theoretical model proposed took into account a voltage dependence distribution of interface states and the effect of the interface states on the oxide potential and included the barrier lowering due to the image force, the hole and electron tunneling currents through the ultra thin insulating layer, the surface-state current, the minority-carrier diffusion current and exact formula for the generation-recombination current. The theoretical analysis shows that none of electrical current mechanisms could dominate over the entire voltage range studied in this work (-1.0 V/spl les/V/spl les/0.5 V). Therefore, all the current components must be included. The verification for our theory was done by comparing the value of the barrier height at zero bias (/spl phi//sub b0/) and the position of peak value of the rectification ratio, as a function of shallow dopant concentration (N/sub A/), with those reported in the literature and extracted from the I-V data. Excellent agreement between the experimental and numerical results strongly support the validity of our theoretical expression for the I-V characteristics. For an Au/p-InP epitaxial MIS diode, our results indicated that the values of /spl phi//sub b0/ is a linear function of the metal work function (/spl phi//sub m/).","PeriodicalId":373470,"journal":{"name":"Proceedings of First International Caracas Conference on Devices, Circuits and Systems","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115245579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Proceedings of the 1995 First IEEE International Caracas Conference on Devices, Circuits and Systems 1995年第一届IEEE国际加拉加斯设备、电路和系统会议论文集

Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1900-01-01 DOI: 10.1109/ICCDCS.1995.499106

C. N. P. I. C. Y. Tecnológicas

引用次数: 1

Application of the generalized Thevenin theorem for solving asymmetrical series faults 广义Thevenin定理在求解不对称序列故障中的应用

Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1900-01-01 DOI: 10.1109/ICCDCS.1995.499158

R.V. Gil B.

引用次数: 2

Back-to-back shunt capacitor switching performance with different kinds of vacuum interrupters 背靠背并联电容器在不同真空灭弧下的开关性能

Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1900-01-01 DOI: 10.1109/ICCDCS.1995.499176

J.M. Perez R.

引用次数: 0