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High-level free-carrier injection in advance bipolar junction transistors 高级自由载流子注入双极结晶体管
Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499139
J. Liou, Y. Yue
{"title":"High-level free-carrier injection in advance bipolar junction transistors","authors":"J. Liou, Y. Yue","doi":"10.1109/ICCDCS.1995.499139","DOIUrl":"https://doi.org/10.1109/ICCDCS.1995.499139","url":null,"abstract":"This paper presents a comprehensive study on the effects of high-level free-carrier injection on the current transport of bipolar junction transistors (BJTs). Detailed information for the free-carrier concentration, electric field, and drift and diffusion current components in the quasi-neutral base (QNB) under high-level injection are calculated using the modified ambipolar transport equation and using several different approximations for the majority-carrier current in the QND. It is shown that high-level injection can create a large retarding field which is in the opposite direction of the built-in field associated with the nonuniform doping concentration. High-level injection also enhances recombination in the QNB, thus resulting in a position-dependent minority-carrier current in the region even if the base is thin. Our results further suggest that the widely used zero majority current approximation gives rise to a larger error compared to other lesser known approximations.","PeriodicalId":373470,"journal":{"name":"Proceedings of First International Caracas Conference on Devices, Circuits and Systems","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128192884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A comprehensive methodology and model for the characterization of hot-carrier induced MOS device degradation 热载流子诱导MOS器件退化的综合表征方法和模型
Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499140
W. Wong, A. Icel
{"title":"A comprehensive methodology and model for the characterization of hot-carrier induced MOS device degradation","authors":"W. Wong, A. Icel","doi":"10.1109/ICCDCS.1995.499140","DOIUrl":"https://doi.org/10.1109/ICCDCS.1995.499140","url":null,"abstract":"One of the main concerns in the submicron MOS technologies is the device lifetime associated with the hot carrier injection into the gate oxide due to the high electric fields on the drain/source terminals or across the channel. Many previous works have been devoted to the MOS device degradation theory and the lifetime prediction. This paper, on the other hand, presents a comprehensive methodology and model for hot-carrier stressing and lifetime characterization. Since the model takes into account the lifetime dependence on the channel length and the applied drain voltage, the transistor lifetime for different MOS geometries under various drain voltages can be easily determined. This model is useful to determine the channel length that will provide 10-20 years DC lifetime for the MOS technologies, where the lifetime for the minimum channel length is much less than 10 years.","PeriodicalId":373470,"journal":{"name":"Proceedings of First International Caracas Conference on Devices, Circuits and Systems","volume":"01 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127227517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
WISS/sup TM/: Well Intelligent Supervisory System WISS/sup TM/: Well智能监控系统
Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499172
J.J. Rodriguez, G. Mora, F. Pernia, F. Gómez, L. Marcano, I. Rotzer, J. Zapico
{"title":"WISS/sup TM/: Well Intelligent Supervisory System","authors":"J.J. Rodriguez, G. Mora, F. Pernia, F. Gómez, L. Marcano, I. Rotzer, J. Zapico","doi":"10.1109/ICCDCS.1995.499172","DOIUrl":"https://doi.org/10.1109/ICCDCS.1995.499172","url":null,"abstract":"This paper introduces the main features of the Well Intelligent Supervisory System, WISS/sup TM/, which is the result of the current efforts bring conducted by Intevep S.A. In response to the increasing demands by the Venezuelan Oil Industry, specially, Maraven S.A., a subsidiary of Petroleos de Venezuela, S.A., PDVSA, in attaining a reliable, efficient, and affordable system for supervising and controlling their day-by-day oil field operation. The system integrates our own as well as commercially available field sensors, a highly reliable communications system, and the state of the art of microcomputer technology. Preliminary results of the first field tests demonstrate a high degree of system availability.","PeriodicalId":373470,"journal":{"name":"Proceedings of First International Caracas Conference on Devices, Circuits and Systems","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131463810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Neural networks for the identification of a three component distillation column 三组分精馏塔的神经网络识别
Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499150
E. Margaglio, M. Uria, J.J. Rodriguez
{"title":"Neural networks for the identification of a three component distillation column","authors":"E. Margaglio, M. Uria, J.J. Rodriguez","doi":"10.1109/ICCDCS.1995.499150","DOIUrl":"https://doi.org/10.1109/ICCDCS.1995.499150","url":null,"abstract":"The identification of a three-component distillation column was performed using a multilayered neural network trained with the backpropagation algorithm. To find an appropriate network size, several adjustment tests were carried out during the experimentation. These tests included changing the number of hidden layers and number of the nodes in the hidden layer. Validation of the resulting neural model was made by comparison of network and process responses to inputs different from those used during training. The network adequately identified the system. Also, it was observed that the network is able to approximate the nonlinearities of the process with greater accuracy than an ARX model whose parameters were estimated using the classical least squares method.","PeriodicalId":373470,"journal":{"name":"Proceedings of First International Caracas Conference on Devices, Circuits and Systems","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131572527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Degradation of zinc oxide varistors 氧化锌压敏电阻的降解
Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499175
J.C. Montenegro, J. Ramirez
{"title":"Degradation of zinc oxide varistors","authors":"J.C. Montenegro, J. Ramirez","doi":"10.1109/ICCDCS.1995.499175","DOIUrl":"https://doi.org/10.1109/ICCDCS.1995.499175","url":null,"abstract":"The zinc oxide varistors are the most recent component used in manufacturing modern surge arresters for power system protection. Fast degradation and loss of the nonlinear characteristics of the varistors drastically reduces the arrester's life expectancies. Some of the most important factors are presented here and how they could affect performance in protecting power systems from overvoltages.","PeriodicalId":373470,"journal":{"name":"Proceedings of First International Caracas Conference on Devices, Circuits and Systems","volume":"156 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115971662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Determination of worst case line energization overvoltages 线路通电过电压最坏情况的测定
Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499116
O. Castellanos, L. Rugeles, A. Urdaneta, A. Brillembourg, A. Hernandez, B. Nouel
{"title":"Determination of worst case line energization overvoltages","authors":"O. Castellanos, L. Rugeles, A. Urdaneta, A. Brillembourg, A. Hernandez, B. Nouel","doi":"10.1109/ICCDCS.1995.499116","DOIUrl":"https://doi.org/10.1109/ICCDCS.1995.499116","url":null,"abstract":"An optimization methodology, is presented, for the automatic determination of the maximum transient overvoltage due to transmission line energization. The approach is based upon digital simulations of the electromagnetic phenomena, and uses a modified version of the Hooke and Jeeves direct search nonlinear optimization method, specially adapted to the particular characteristics of the problem, for the determination of the closing times of the circuit breaker poles which cause the maximum transient line energization overvoltage. Results are presented for the application of the proposed technique to different test cases, including transmission lines from 115 kV to 765 kV from the Venezuelan electric system. The overall method is shown to be accurate and reliable.","PeriodicalId":373470,"journal":{"name":"Proceedings of First International Caracas Conference on Devices, Circuits and Systems","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114797101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis of induction machine slot harmonics in the TF domain 感应电机槽谐波在TF域的分析
Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499129
J. Restrepo, P. Bowler
{"title":"Analysis of induction machine slot harmonics in the TF domain","authors":"J. Restrepo, P. Bowler","doi":"10.1109/ICCDCS.1995.499129","DOIUrl":"https://doi.org/10.1109/ICCDCS.1995.499129","url":null,"abstract":"A method for measuring the rotor speed, in AC machines, is based on sensing the rotor slot harmonics. Current implementations of this technique can give a good measurement of rotor speed only for steady state conditions. This paper examines the use of Time-Frequency distributions to analyze the behaviour of rotor slot harmonics, during transient state.","PeriodicalId":373470,"journal":{"name":"Proceedings of First International Caracas Conference on Devices, Circuits and Systems","volume":"6 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120917035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Capacitive compensation in electrical power systems feeding deep petroleum well stations 深油井站供电系统的容性补偿
Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499160
G. Pesse, J. Aller, P. Arizon, A. Bueno, A. Ginart
{"title":"Capacitive compensation in electrical power systems feeding deep petroleum well stations","authors":"G. Pesse, J. Aller, P. Arizon, A. Bueno, A. Ginart","doi":"10.1109/ICCDCS.1995.499160","DOIUrl":"https://doi.org/10.1109/ICCDCS.1995.499160","url":null,"abstract":"Today, most of the deep petroleum extraction systems, using centrifugal type pumps, are being activated by electronic frequency converters. In the presence of a weak energy transmission system, where capacitive compensation to improve voltage profile is required, power electronics converters that inject a high harmonic content toward the network, may cause a great number of problems in the electric power system like resonance, heating, derating of equipment, etc. Obviously this problem must be carefully analyzed. In this work, the different components of: the electric power system, the frequency electronic converter and the induction machine, are modeled using the ATP (Alternative Transient Program) software in order to evaluate the harmonic injections in the load flow. This simulation evaluates the impact of different reactive compensation alternatives in the network and the converter.","PeriodicalId":373470,"journal":{"name":"Proceedings of First International Caracas Conference on Devices, Circuits and Systems","volume":"163 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131600484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pulse width modulation for induction motor drives 感应电机驱动的脉宽调制
Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499126
P. Bowler
{"title":"Pulse width modulation for induction motor drives","authors":"P. Bowler","doi":"10.1109/ICCDCS.1995.499126","DOIUrl":"https://doi.org/10.1109/ICCDCS.1995.499126","url":null,"abstract":"The properties and generation of subharmonic and stored pattern pulse width modulation waveforms are discussed. Measured examples of the waveforms are compared with computer predictions and the effects of varying carrier frequency with a particular motor load are shown demonstrating the effects of restricted wave length on digital modulator performance. Practical aspects of transistor GTO and IGBT power stages are discussed and compared.","PeriodicalId":373470,"journal":{"name":"Proceedings of First International Caracas Conference on Devices, Circuits and Systems","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129186566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thermal shunt approach for microwave power heterojunction bipolar transistors-a review (invited) 微波功率异质结双极晶体管的热分流方法综述(特邀)
Proceedings of First International Caracas Conference on Devices, Circuits and Systems Pub Date : 1995-12-12 DOI: 10.1109/ICCDCS.1995.499144
C.I. Huang, L. Liou, J. Barrette
{"title":"Thermal shunt approach for microwave power heterojunction bipolar transistors-a review (invited)","authors":"C.I. Huang, L. Liou, J. Barrette","doi":"10.1109/ICCDCS.1995.499144","DOIUrl":"https://doi.org/10.1109/ICCDCS.1995.499144","url":null,"abstract":"The newly developed thermal-shunt approach for AlGaAs/GaAs microwave power heterojunction bipolar transistors is reviewed from its inception through thermal modeling to fabrication and performance evaluation. Its merits of providing low noise figure and generating high power density at microwave frequency are summarized.","PeriodicalId":373470,"journal":{"name":"Proceedings of First International Caracas Conference on Devices, Circuits and Systems","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114729488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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