2011 37th IEEE Photovoltaic Specialists Conference最新文献_第9页

Toward further development of photovoltaics to overcome current problems occuured bynuclear power plants in Japan 进一步发展光伏发电，以克服目前日本核电站出现的问题

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186642

M. Yamaguchi, Y. Ohshita

引用次数: 1

Development of space solar cells at Spectrolab 光谱学实验室空间太阳能电池的发展

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186250

J. Boisvert, D. Law, R. King, D. Bhusari, X. Liu, S. Mesropian, D. Larrabee, R. Woo, K. Edmondson, D. Krut, D. Peterson, K. Rouhani, B. Benedikt, N. Karam

引用次数: 6

Industrial integration of interdigitated back-contact Si solar cells by laser ablation 采用激光烧蚀技术实现交叉背接触硅太阳能电池的工业集成

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186148

B. Pawlak, B. Sojka, J. Robbelein, S. Singh, T. Janssens, J. Das, N. Posthuma, J. Poortmans

引用次数: 3

Interface modification of ZnO:B Transparent Conducting Oxides for amorphous silicon solar cells ZnO:B透明导电氧化物在非晶硅太阳能电池中的界面改性

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186585

Chien-Hung Lin, Jia-Hsiang Liu, I. Chan

引用次数: 0

Operation design of PV system with storage battery by using next-day residential load forecast 基于次日居民负荷预测的蓄电池光伏系统运行设计

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186427

Yusuke Goto, Takanobu Suzuki, T. Shimoo, Takayoshi Hayashi, S. Wakao

引用次数: 11

Optimizing bottom subcells for III-V-on-Si multijunction solar cells III-V-on-Si多结太阳能电池底部亚电池优化

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186071

E. Garcia-Tabares, I. García, D. Martin, I. Rey‐Stolle

引用次数: 9

20% Efficient screen-printed and aluminum-alloyed back-contact back-junction cells and interconnection scheme of point-shaped metalized cells 20%高效丝网印刷和铝合金背接触背结电池和点状金属化电池的互连方案

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6185843

R. Woehl, R. Keding, M. Rudiger, H. Gentischer, F. Clement, J. Wilde, D. Biro

{"title":"20% Efficient screen-printed and aluminum-alloyed back-contact back-junction cells and interconnection scheme of point-shaped metalized cells","authors":"R. Woehl, R. Keding, M. Rudiger, H. Gentischer, F. Clement, J. Wilde, D. Biro","doi":"10.1109/PVSC.2011.6185843","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6185843","url":null,"abstract":"A back-contact back-junction silicon solar cell is presented that was exclusively structured and metalized by screen-printing technology. On n-type base material the emitter was formed by locally printed and alloyed aluminum structures in a co-firing process. By a varying emitter coverage on the rear the influence on the collection probability and thus the short-circuit current density is analyzed by light beam induced current (LBIC) measurements. Efficiencies of up to 20% were realized and independently confirmed by Fraunhofer ISE CalLab. Two-dimensional simulations of the cell structure are performed and agree well with the processed cell. Variations of several parameters show room for further efficiency increase. Furthermore a new module concept for back-contact cells is presented where the metallization on cell level is point-shaped. The lateral conductance of collected carriers is enabled on module level by a structured printed circuit board. On the contacts an adhesive agent is screen-printed in order to make the aluminum contacts solderable. Afterwards a soldering paste is screen-printed which connects the cell and the printed circuit board or foil during a reflow process. This concept overcomes the restriction in cell size of back-contact back-junction modules due to thick copper layer.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132942591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Fill factor metastabilities in CIGSe-based solar cells investigated by means of photoluminescence techniques 利用光致发光技术研究了cigse基太阳能电池的填充因子亚稳态

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186525

M. Pawłowski, P. Zabierowski, R. Bacewicz, N. Barreau, A. Hultqvist

{"title":"Fill factor metastabilities in CIGSe-based solar cells investigated by means of photoluminescence techniques","authors":"M. Pawłowski, P. Zabierowski, R. Bacewicz, N. Barreau, A. Hultqvist","doi":"10.1109/PVSC.2011.6186525","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186525","url":null,"abstract":"In this paper we aim at a deeper understanding of fill factor (FF) deterioration under the absence of high energy photons in CIGSe-based solar cells (so-called “red kink” effect). In order to elucidate the mechanisms responsible for this phenomenon we take advantage of voltage dependent photoluminescence (PL-V) in combination with current voltage characteristics (I-V). Basing on a close correlation between PL-V and light I-V characteristics we show that the “red kink” effect is due to the redistribution of the electrical field in the absorber space charge region which in turn influences carrier collection. An important observation is that both, PL-V and light I-V, exhibit the same metastable behavior under light soaking (LS) and reverse bias treatment (REV). Since these metastabilities are caused by a defect charge state redistribution in the close-to-interface CIGSe layer (p+ layer), it allows us to locate the source of FF metastable behavior on the absorber side of the junction. Basing on numerical modeling of PL-V and light I-V characteristics we discuss presented results within a framework of existing models in which the redistribution of the negative charge in the window/buffer/absorber interface region has a direct influence on carrier collection. We show that the best agreement with experimental results can be achieved by a combination of a barrier at the window/buffer interface with the p+ layer model.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133504420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Polymer formation in conductive Mg-doped C60 films 导电掺镁C60薄膜中聚合物的形成

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186056

N. Kojima, S. Nishi, C. Morales, M. Yamaguchi

引用次数: 0

Photonic crystal resonant cavity for thermophotovoltaic applications 热光伏应用的光子晶体谐振腔

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186015

C. Shemelya, T. Vandervelde

引用次数: 3