2011 37th IEEE Photovoltaic Specialists Conference最新文献_第10页

Comparison of metastabilities in CIGS solar cells with In2S3 and CdS buffer layers 具有In2S3和CdS缓冲层的CIGS太阳能电池亚稳态的比较

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186519

K. Macielak, M. Igalson, S. Spiering

引用次数: 1

Optimum design of InGaP/GaAs/Ge triple-junction solar cells with sub-wavelength surface texture structure 具有亚波长表面纹理结构的InGaP/GaAs/Ge三结太阳能电池的优化设计

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186360

Pei-Hsuan Huang, Hsun-Wen Wang, M. Tsai, F. Lai, S. Kuo, H. Kuo, S. Chi

引用次数: 5

Performance improvement of microcrystalline thin film silicon solar cells by back reflector with high resistivity and low absorption 利用高阻低吸收背反射器改善微晶硅薄膜太阳能电池的性能

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186034

S. Kim, H. C. Lee, W. Y. Kim, J. W. Park, J. Chung, S. Ahn, H. Lee

{"title":"Performance improvement of microcrystalline thin film silicon solar cells by back reflector with high resistivity and low absorption","authors":"S. Kim, H. C. Lee, W. Y. Kim, J. W. Park, J. Chung, S. Ahn, H. Lee","doi":"10.1109/PVSC.2011.6186034","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186034","url":null,"abstract":"In this paper, a series of microcrystalline silicon (μc-Si:H) solar cells were fabricated on different back reflectors by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). The results indicated that the performance of μc-Si:H solar cells strongly depended on their back reflector structures. First of all, the various Al:ZnO films with different optical and electrical properties were fabricated, and the effects on the performance of μc-Si:H solar cells as the back reflector materials were investigated. Unlike the previous studies for a-Si:H solar cells, all the μc-Si:H cells with various Al:ZnO back reflectors are showing similar I-V characteristics. However, it was interesting result that the back reflector with highest resistivity, fabricated by oxygen reactive sputtering, showed the best fill factor. As the next step, the n-μc-SiO layer with high resistivity was introduced as the new back reflector materials substituting for the conventional Al:ZnO. The optimal deposition condition for the n-μc-SiO layer was selected considering the low refractive index under 1.85, the reasonable electrical resistivity around 1E+3 Ω·cm and low absorption spectra near IR region. For the new back reflector structures, all the cell parameters were increased drastically at n-μc-SiO thicker than 300 nm, and a conversion efficiency of as high as 9.3 % (Voc: 0.501 V, Jsc: 27.4 mA/cm2, F.F: 0.68) was obtained. The performance gain for Voc and F.F was more obvious in the thicker back reflectors, suggesting that the high-resistivity n-μc-SiO layer could reduce the shunt current at the back contacts of μc-Si:H cells.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115578689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Improved energy conversion efficiency in wide bandgap Cu(In, Ga)Se2 solar cells 提高了Cu(in, Ga)Se2太阳能电池的能量转换效率

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6185837

M. Contreras, L. Mansfield, B. Egaas, Jian V. Li, M. Romero, R. Noufi, Eveline Rudiger-Voigt, W. Mannstadt

引用次数: 40

Rapid metallization paste firing of crystalline silicon solar cells 晶硅太阳能电池的快速金属化浆料烧制

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186393

P. J. Richter, F. Bottari, D. C. Wong

引用次数: 3

Progress in the development of high-conversion-efficiency a-Si/μc-Si tandem solar module using μc-Si thin film with high deposition rate on Gen. 5.5 large-area glass substrate 采用高速率μc-Si薄膜在Gen. 5.5大面积玻璃衬底上制备高转换效率a-Si/μc-Si串联太阳能组件的研究进展

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6185919

Y. Aya, H. Katayama, M. Matsumoto, M. Hishida, W. Shinohara, I. Yoshida, A. Kitahara, H. Yoneda, A. Terakawa, M. Iseki

{"title":"Progress in the development of high-conversion-efficiency a-Si/μc-Si tandem solar module using μc-Si thin film with high deposition rate on Gen. 5.5 large-area glass substrate","authors":"Y. Aya, H. Katayama, M. Matsumoto, M. Hishida, W. Shinohara, I. Yoshida, A. Kitahara, H. Yoneda, A. Terakawa, M. Iseki","doi":"10.1109/PVSC.2011.6185919","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6185919","url":null,"abstract":"The technology to make high-quality, high-reliability solar modules with a high deposition rate for μc-Si thin-film is a problem for the industrialization of low-cost, high-conversion-efficiency a-Si/μc-Si tandem structure solar modules. Sanyo has solved this problem by developing an original CVD technique called Localized Plasma Confinement CVD and a new evaluation method for μc-Si thin film. A stabilized conversion efficiency of 10.0% was achieved for an a-Si/μc-Si tandem structure solar module, and a deposition rate of 2.4 nm/s for μc-Si thin-film was attained on a Gen. 5.5 full-size glass substrate. To obtain a higher conversion-efficiency a-Si/μc-Si tandem structure solar module, fundamental studies of μc-Si thin-film have been performed, and a stabilized conversion efficiency of 10.5% (Initial solar module conversion efficiency: 12.0%) has been achieved on a large-area glass substrate. Furthermore, in the study of this development, the highest stabilized conversion efficiency of 12.0% (Initial conversion-efficiency: 13.5%) was attained. Module reliability tests confirmed by IEC 61646 Ed. 2 revealed that the performance of the module is adapted. These high-performance a-Si/μc-Si tandem structure solar modules were prepared by using the knowledge of our thin-film and module technologies.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"209 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115926378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Changing incentive structures and photovoltaic demand 不断变化的激励结构与光伏需求

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186634

P. Mints

引用次数: 1

Innovative passivation for reducing degradation of a-Si/uc-Si tandem photovaltaic module 减少a-Si/uc-Si串联光伏组件降解的创新钝化方法

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186573

Chih-Wei Chang, Ching-In Wu, Kai-Hsiang Chuang, Chih-Hsiung Chang, K. Lin, Chin-Yao Tsai

引用次数: 0

High-mobility copper (I) oxide thin films prepared by reactive dc magnetron sputtering for photovoltaic applications 反应性直流磁控溅射制备高迁移率氧化铜薄膜

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6185892

Y. Lee, M. Winkler, S. Siah, R. Brandt, T. Buonassisi

引用次数: 2

Damage-free top-down processes for fabricating two-dimensional array of sub-10-nanometer GaAs nanodiscs using bio-template and neutral beam etching for intermediate band solar cell applications 采用生物模板和中性光束刻蚀技术制备亚10纳米GaAs纳米片二维阵列的自顶向下工艺，用于中波段太阳能电池

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186499

M. F. Budiman, Xuan-Yu Wang, Chi-Hsien Huang, R. Tsukamoto, T. Kaizu, M. Igarashi, P. Mortemousque, Y. Okada, A. Murayama, K. Itoh, Y. Ohno, S. Samukawa

{"title":"Damage-free top-down processes for fabricating two-dimensional array of sub-10-nanometer GaAs nanodiscs using bio-template and neutral beam etching for intermediate band solar cell applications","authors":"M. F. Budiman, Xuan-Yu Wang, Chi-Hsien Huang, R. Tsukamoto, T. Kaizu, M. Igarashi, P. Mortemousque, Y. Okada, A. Murayama, K. Itoh, Y. Ohno, S. Samukawa","doi":"10.1109/PVSC.2011.6186499","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186499","url":null,"abstract":"A series of damage-free fabrication processes for a two-dimensional array of sub-10-nm GaAs nanodiscs was developed by using bio-templates and neutral beam etching. The photoluminescence of GaAs etched with a neutral beam clearly revealed that the processes could accomplish defect-free etching for GaAs. In the bio-template process, a hydrogen-radical treatment was used to remove the native oxide on the GaAs surface, and then neutral beam oxidation (NBO) was used to form a hydrophilic 1-nm-thick GaAs oxide (GaAs-NBO) film. The two-dimensional array of ferritins (protein including a 7-nm-diameter iron core) can be arranged well on hydrophilic GaAs-NBO film. The ferritin protein shell was removed using an oxygen-radical treatment at a low temperature of 280°C without thermal damage to the GaAs. Then, the neutral beam etched the the GaAs to form defect-free nanodisc structure of using the iron core as an etching mask. Finally, the iron oxide core was removed by wet etching with diluted hydrogen chloride and the fabrication process was completed without inflicting any damage to the GaAs. As a result, a two-dimensional array of GaAs quantum dots with a diameter of ∼7 nm, a height of ∼10 nm, a high taper angle of 88°, and a quantum dot density of more than 7×1011 cm−2 was successfully fabricated without causing any damage to the GaAs.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"389 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114504720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0