{"title":"Rapid metallization paste firing of crystalline silicon solar cells","authors":"P. J. Richter, F. Bottari, D. C. Wong","doi":"10.1109/PVSC.2011.6186393","DOIUrl":null,"url":null,"abstract":"Co-firing of crystalline silicon solar cell metal contacts in infrared conveyor furnaces is the standard of the industry today. Typical ramp rates of 60–80°C./s. and total firing times of approximately 16 to 20 seconds are used due to limitations inherent in currently available production equipment. We report on a novel industrial-scale process utilizing ramp rates as high as 400°C./s. and high cooling rates which result in total firing times of 1.09 to 1.72 seconds. Cells have been produced with this process with measured fill factors in excess of 80% and high shunt resistance. At the lower firing times in this experimental series, high fill factors were maintained but open circuit voltage (Voc) reduced indicating non-optimal back surface field (BSF) formation. This study addresses the requirements for aluminum BSF formation in very rapid co-firing.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"358 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 37th IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2011.6186393","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Co-firing of crystalline silicon solar cell metal contacts in infrared conveyor furnaces is the standard of the industry today. Typical ramp rates of 60–80°C./s. and total firing times of approximately 16 to 20 seconds are used due to limitations inherent in currently available production equipment. We report on a novel industrial-scale process utilizing ramp rates as high as 400°C./s. and high cooling rates which result in total firing times of 1.09 to 1.72 seconds. Cells have been produced with this process with measured fill factors in excess of 80% and high shunt resistance. At the lower firing times in this experimental series, high fill factors were maintained but open circuit voltage (Voc) reduced indicating non-optimal back surface field (BSF) formation. This study addresses the requirements for aluminum BSF formation in very rapid co-firing.