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Stress measurement by X-ray diffraction in multicrystalline silicon solar cells 多晶硅太阳能电池x射线衍射应力测量
2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186149
V. Popovich, N. M. van der Pers, M. Janssen, I. Bennett, I. Richardson
{"title":"Stress measurement by X-ray diffraction in multicrystalline silicon solar cells","authors":"V. Popovich, N. M. van der Pers, M. Janssen, I. Bennett, I. Richardson","doi":"10.1109/PVSC.2011.6186149","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186149","url":null,"abstract":"Residual stresses in multicrystalline silicon solar cells has become a problem of growing importance, especially in view of silicon wafer thickness reduction. Without increasing the wafer strength, this leads to a high fracture rate during subsequent handling and processing steps. The most critical processing step during the manufacture of screen-printed solar cells is the firing of metallic contacts. In this work we evaluate the development of mechanical stresses in metallic contacts (Al, Ag and Al/Ag bus bars) with respect to different processing steps. For this purpose we combine X-ray diffraction (XRD) stress measurements, cell bowing measured with a laser scanning device and in-situ bending tests. It was found that the Al back contact layer represents a very porous/loose microstructure, which does not affect the mechanical stability of the solar cell. It was also found that the thickness and uniformity of the eutectic layer are the most important factors influencing the bowing of a complete solar cell. Furthermore, residual stresses and stresses developing during cell bending in Ag, Al/Ag bus are measured and discussed in detail in this work.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133871123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design, fabrication and analysis of high efficiency inkjet printed passivated emitter rear contacted cells 高效喷墨印刷钝化发射极后接触电池的设计、制造与分析
2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186143
M. Lenio, James Howard, Fabian Jentschke, A. Lennon, S. Wenham
{"title":"Design, fabrication and analysis of high efficiency inkjet printed passivated emitter rear contacted cells","authors":"M. Lenio, James Howard, Fabian Jentschke, A. Lennon, S. Wenham","doi":"10.1109/PVSC.2011.6186143","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186143","url":null,"abstract":"Global warming, as well as the energy crisis as the world approaches peak oil production, are driving a need for more sustainable, cost effective, and efficient electricity sources. High efficiency photovoltaic designs, such as the PERL and PERC, use too many high temperature processes, expensive materials and complex manufacturing methods to be commercially viable. Work has been done to replicate the PERC cell structure using commercially viable methods, namely inkjet printing and metal plating. Inkjet printing has necessitated the use of plating as a self-aligning metallization method, and this plating has revealed some areas for concern: 1.) Ni plating on the rear point contacts; 2.) Poor adhesion between Ni and Si for the front finger contacts; and 3.) Non-uniform NiSi formation. Methods for mitigating these issues include different plating methods, improved surface preparation, and altered sintering conditions. Test structures and models validating these proposals are presented.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"271 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134036161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A general light trapping theory for grating structures 光栅结构的一般光捕获理论
2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6185933
Zongfu Yu, A. Raman, S. Fan
{"title":"A general light trapping theory for grating structures","authors":"Zongfu Yu, A. Raman, S. Fan","doi":"10.1109/PVSC.2011.6185933","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6185933","url":null,"abstract":"We use a rigorous electromagnetic approach to analyze the fundamental limit of light-trapping enhancement in grating structures. This limit can exceed the bulk limit of 4n2, but has significant angular dependency. We explicitly show that 2D gratings provide more enhancement than 1D gratings. We also show the effects of the grating profile's symmetry on the absorption enhancement limit. Our findings provide general guidance for the design of grating structures for light-trapping solar.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"252 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134374265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance of multi-junction silicon-based thin film solar cells under concentrated sunlight 多结硅基薄膜太阳能电池在聚光下的性能
2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186033
S. Kasashima, Ryohei Uzawa, Bancha Janthong, S. Inthisang, T. Krajangsang, P. Sichanugrist, M. Konagai
{"title":"Performance of multi-junction silicon-based thin film solar cells under concentrated sunlight","authors":"S. Kasashima, Ryohei Uzawa, Bancha Janthong, S. Inthisang, T. Krajangsang, P. Sichanugrist, M. Konagai","doi":"10.1109/PVSC.2011.6186033","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186033","url":null,"abstract":"Multi-junction silicon-based thin-film concentrator solar cells are promising candidate to achieve both low-cost and high-efficiency. For the application of silicon-based thin film solar cells to concentrator photovoltaics, it is required to be revealed the light intensity dependence of the performance of silicon-based thin film solar cells. From these reasons, in this study both calculation and experimental studies were conducted with several types of single-junction and multi-junction tandem solar cells. From both simulation and measurement results, we observed that double- and triple-junction solar cells achieve high open-circuit voltage and large logarithmic increment in open-circuit voltage with increasing light intensities. On the other hand, it became clear that the drop of fill factor is required to be improved for the realization of the multi-junction silicon-based thin-film solar cells with very high efficiency under low concentration ratios of sunlight.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131511661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analysis of an irradiance adaptative PV based battery floating charger 一种辐照度自适应光伏电池浮充分析
2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186313
N. Karami, N. Moubayed, R. Outbib
{"title":"Analysis of an irradiance adaptative PV based battery floating charger","authors":"N. Karami, N. Moubayed, R. Outbib","doi":"10.1109/PVSC.2011.6186313","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186313","url":null,"abstract":"In a system composed of a PV cell, a converter and a resistive load, the MPPT techniques are done on the output of the PV cell and not on the load level. This study considers a battery as load and considers its state of charge and take into consideration that empty battery need more current than a fully charged one and therefore the MPPT is not useful in this case, but a smart system able to manage the battery current based on different irradiance levels. For a fixed voltage output of the DC/DC converter, the current risks to reach its maximum when the battery is totally empty which is caused by the big difference of potential between the converter and the battery voltages. Whereas in a fully charged battery, the difference of potential between the charger and the battery is zero and therefore no need to search for the MPP in this case. The study treats first the modeling of an open loop DC/DC buck converter and then a modeling of the converter in a closed loop with a PID controller. Also, it proposes the use of a microcontroller with three different circuit designs and algorithms to manage the current and the voltage together depending on the battery state of charge. The final design is called a PV based battery floating charger that increase the lifetime of the battery by controlling the converter output voltage with respect to the consumed current, the available PV current and the converter Mosfet tolerated current.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127584987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Silicon-based multi-junction solar cell with 19.7% efficiency at 1-sun using areal current matching for 2-terminal operation 硅基多结太阳能电池，在1太阳时效率为19.7%，采用面电流匹配进行2端操作
2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186125
Jingfeng Yang, D. Cheong, J. Rideout, S. Tavakoli, R. Kleiman
{"title":"Silicon-based multi-junction solar cell with 19.7% efficiency at 1-sun using areal current matching for 2-terminal operation","authors":"Jingfeng Yang, D. Cheong, J. Rideout, S. Tavakoli, R. Kleiman","doi":"10.1109/PVSC.2011.6186125","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186125","url":null,"abstract":"The areal current matching technique is introduced as a novel method to achieve current matching in multi-junction solar cells for 2-terminal operation. A hybrid-integrated InGaP/(In)GaAs/Si 3-junction tandem cell is demonstrated for the first time, showing 1 sun AM1.5G efficiency of 19.7% in 2-terminal operation, with an area of 0.89 cm2.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"439 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129409778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Surface morphology and light scattering properties of the AZO/ITO bi-layer with native textured capability 具有天然织构能力的AZO/ITO双层材料的表面形貌及光散射特性
2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186037
Jia-Hsiang Liu, Chien-Hung Lin, Chih-Chun Yang, I. Chan
{"title":"Surface morphology and light scattering properties of the AZO/ITO bi-layer with native textured capability","authors":"Jia-Hsiang Liu, Chien-Hung Lin, Chih-Chun Yang, I. Chan","doi":"10.1109/PVSC.2011.6186037","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186037","url":null,"abstract":"Light trapping, i.e. increasing the path length of incoming light, plays a decisive role for photovoltaic device performance for thin film silicon solar cells. This paper discusses way to demonstrate a bi-layer structure with high haze by using all dry process. Al doped ZnO (AZO:Al) film was continuously deposited on ITO precursor by pulse direct current magnetron sputtering. The various deposition temperature of the ITO glass substrate to improve the electrical and optical properties of AZO/ITO bi-layer transparent conductive oxides (TCOs) as transmittance, haze, surface morphology, sheet resistance (Rs), carrier concentration (n) and Hall mobility (μ). The AZO/ITO bi-layer presents excellent average Rs (4ω/sq), transmittance (81%) and haze (33%).","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129374584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A comparison of 3rd generation solar cell efficiencies using thermodynamic transfer functions: Which method is best? 使用热力学传递函数的第三代太阳能电池效率比较:哪种方法是最好的?
2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186352
Z. R. Abrams, A. Niv, M. Gharghi, C. Gladden, Xiang Zhang
{"title":"A comparison of 3rd generation solar cell efficiencies using thermodynamic transfer functions: Which method is best?","authors":"Z. R. Abrams, A. Niv, M. Gharghi, C. Gladden, Xiang Zhang","doi":"10.1109/PVSC.2011.6186352","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186352","url":null,"abstract":"Exceeding the Shockley-Queisser efficiency limit for a single junction solar cell has been theorized using various means. Specifically, up- and down-conversion, carrier multiplication and intermediate band transitions have been posited as methods of improving the efficiency. Here, we compare these methods using a thermodynamic approach with a newly devised pseudo-linear system model. This method allows a schematic interpretation of the internal processes of efficiency enhancement techniques. In particular, we demonstrate that down-conversion is thermodynamically preferable to carrier multiplication, and that splitting the sun's spectrum before impinging upon the solar cell is preferable to attempting to do this within the solar cell itself.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"1 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128920577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Comparison of charge carrier mobility between homeotropic and planar alignments in a perylene-derivative columnar liquid crystal 二苝衍生物柱状液晶中各向同性与平面排列中载流子迁移率的比较
2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186057
Sedigheh Mirzaei, K. Stegmaier, P. Jolinat, G. Ablart, E. Grelet, H. Bock
{"title":"Comparison of charge carrier mobility between homeotropic and planar alignments in a perylene-derivative columnar liquid crystal","authors":"Sedigheh Mirzaei, K. Stegmaier, P. Jolinat, G. Ablart, E. Grelet, H. Bock","doi":"10.1109/PVSC.2011.6186057","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186057","url":null,"abstract":"A new perylene-derivative exhibiting a room temperature columnar liquid crystalline phase has been characterized from the viewpoint of the mobility of charge carriers in the directions parallel and perpendicular to the columns axis, corresponding to homeotropic and planar alignments respectively. The time of flight (TOF) transients for holes were recorded at ambient temperature and over a range of electric fields (8 × 10<sup>3</sup>–1.2 × 10<sup>5</sup> V/cm). The measured hole mobility is in the order of 10<sup>−4</sup> cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> for planar alignment. The mobility value is up to 10 times higher in the case of homeotropic alignment which is an indication of a better electrical conductivity in the direction parallel to columns compared to the perpendicular direction. This one-dimensional semiconducting property makes CLCs interesting for semiconductor devices.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117310202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MOS solar cells with oxides deposited by sol-gel processing 溶胶-凝胶法沉积氧化物的MOS太阳能电池
2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186547
Chia-Hong Huang, Chung-Cheng Chang, J. Tsai
{"title":"MOS solar cells with oxides deposited by sol-gel processing","authors":"Chia-Hong Huang, Chung-Cheng Chang, J. Tsai","doi":"10.1109/PVSC.2011.6186547","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186547","url":null,"abstract":"It is proposed that the metal-oxide-semiconductor (MOS) solar cells with sol-gel oxides deposited by spin coating are produced in this study. This sol-gel-derived SiO2 layer is not very thin and the deviation in the thickness of the sol-gel layer is not slight. In general, the characteristics of MOS solar cells are significantly affected by the thickness of the SiO2 layer. Particularly, the thermal grown oxide thickness required is less than 2nm for MOS solar cell applications. It is useful for large-scale and large-amount manufacturing that the influence of nonuniformity of oxide thickness on the characteristics of MOS solar cells with sol-gel oxides is reduced. It is observed that the short-circuit current density (Jsc) of 15.56 mA/cm2, the open-circuit voltage (Voc) of 0.49V, the fill factor (FF) of 0.723 and the conversion efficiency (η%) of 5.44% are obtained by means of the current-voltage (I-V) measurements under AM 1.5 illumination at 25°C in the MOS solar cell with sol-gel oxides.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131026987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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