IET Nanodielectrics最新文献_第5页

Enhanced High-Temperature Energy Storage Properties of BOPP Capacitor Films by Coating Heterostructural Ceramics Layers 异质结构陶瓷涂层增强BOPP电容器薄膜的高温储能性能

IF 3.8

IET Nanodielectrics Pub Date : 2025-05-22 DOI: 10.1049/nde2.70009

Zhaoliang Xing, Bize Gong, Tianyuan Yin, Shaowei Guo, Bo Yang, Tiandong Zhang, Jianhong Hao

{"title":"Enhanced High-Temperature Energy Storage Properties of BOPP Capacitor Films by Coating Heterostructural Ceramics Layers","authors":"Zhaoliang Xing, Bize Gong, Tianyuan Yin, Shaowei Guo, Bo Yang, Tiandong Zhang, Jianhong Hao","doi":"10.1049/nde2.70009","DOIUrl":"10.1049/nde2.70009","url":null,"abstract":"Biaxially oriented polypropylene (BOPP), the dielectric material of choice for polymer film capacitors, is widely used in advanced electronic devices and power grids, among other applications. However, the nonlinear growth of the conduction loss at high temperatures leads to a rapid deterioration of its energy storage performance, which seriously hinders the development trend of miniaturisation and high integration of power systems. In this study, inorganic nanolayers with heterogeneous structure were grown on the surface of BOPP films by magnetron sputtering using high dielectric constant BaZrTiO3 and wide bandgap Al2O3 ceramic targets. Experimental and theoretical analyses show that the use of wide bandgap Al2O3 as the heterojunction outer layer can effectively impede carrier injection and transport, leading to a significant reduction in the leakage current density of the composite film, effectively enhancing the high temperature energy storage performance of the composite films. The synergistic enhancement of the inorganic heterojunction structure on the dielectric properties and insulating strength of the polymer film is attributed to the ability of the Al2O3/BaZrTiO3/BOPP/BaZrTiO3/Al2O3 (O-B-P-B-O) composite films to exhibit a discharge energy density of 2.49 J/cm3 and a charge/discharge efficiency of 77.6% at 125°C and 500 MV/m.","PeriodicalId":36855,"journal":{"name":"IET Nanodielectrics","volume":"8 1","pages":""},"PeriodicalIF":3.8,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/nde2.70009","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144108962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IF 3.8

IET Nanodielectrics Pub Date : 2025-05-22

引用次数: 0

Improved Insulation Properties of Polypropylene With Highly Orientated Lamellar Induced by NonIsothermal Shear Stress 非等温剪切应力诱导下高取向层状聚丙烯绝缘性能的改善

IF 3.8

IET Nanodielectrics Pub Date : 2025-05-08 DOI: 10.1049/nde2.70007

Lei Huang, Yan-Hui Song, Li-Juan Yin, Shao-Long Zhong, Zhi-Min Dang

引用次数: 0

IF 3.8

IET Nanodielectrics Pub Date : 2025-05-08

引用次数: 0

IF 3.8

IET Nanodielectrics Pub Date : 2025-04-30

引用次数: 0

Early Brain Tumour Cell Detection With High-Sensitivity Terahertz Sensors Based on Photonic Crystal Fibre 基于光子晶体光纤的高灵敏度太赫兹传感器早期脑肿瘤细胞检测

IF 3.8

IET Nanodielectrics Pub Date : 2025-04-30 DOI: 10.1049/nde2.70008

Diponkar Kundu, Md. Sohel Rana, Md. Naimur Rahman Naim, Md. Jobaier Hossain, A. H. M. Iftekharul Ferdous, Md. Safiul Islam, Md. Golam Sadeque

{"title":"Early Brain Tumour Cell Detection With High-Sensitivity Terahertz Sensors Based on Photonic Crystal Fibre","authors":"Diponkar Kundu, Md. Sohel Rana, Md. Naimur Rahman Naim, Md. Jobaier Hossain, A. H. M. Iftekharul Ferdous, Md. Safiul Islam, Md. Golam Sadeque","doi":"10.1049/nde2.70008","DOIUrl":"10.1049/nde2.70008","url":null,"abstract":"Early detection of brain tumours is crucial for timely treatment, improving survival rates, and preventing severe neurological complications. When successful procedures for early identification are applied to brain tumours, it might preserve people. The article illustrates an original biological device for finding the first signs of brain tumour cells based on photonic crystal fibre (PCF) equipment performing within the terahertz (THz) band. The suggested scanner is a helpful instrument in tumour tissue diagnosis due to its extremely sensitive nature along with minimal transmission degradation. The photonic crystal fibre's distinctive arrangement, utilised by the terahertz frequency spectrum, permits accurate classification of healthy and tumour parts according to the differences in electromagnetic features. Typical tissue in the brain contain damage, tumours, as well as cells that are cancerous. When juxtaposed with previous PCF-based biological indicators, the device that is recommended has excellent comparative response with minimal expenses. The sensing device has a relative sensitivity of 99.26%, an effective area of 4.77 × 10−8 m2, a minimal confinement loss of 9.55 × 10−6 cm−1, and a low effective material loss of 0.00219 cm−1. The findings of this investigation indicate a big step forward for biological observing equipment, providing a hopeful approach to prompt identification of brain tumours for possible commercial diagnostic possibilities.","PeriodicalId":36855,"journal":{"name":"IET Nanodielectrics","volume":"8 1","pages":""},"PeriodicalIF":3.8,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/nde2.70008","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evaluation of the Feasibility of Replacing SF6 With C5F10O for Gas-Insulated Switchgear From Insulation Properties 从绝缘性能评价气体绝缘开关用c5f100代替SF6的可行性

IF 3.8

IET Nanodielectrics Pub Date : 2025-04-25 DOI: 10.1049/nde2.70002

Yalong Xia, Fuxiang Li, Hua Mao, Yan Wang, Song Xiao, Yijiang Chen

引用次数: 0

Improvement in Insulation and Corona Resistance of PI by Incorporating SiO2 and AlN 添加SiO2和AlN改善PI绝缘和电晕电阻

IF 3.8

IET Nanodielectrics Pub Date : 2025-04-23 DOI: 10.1049/nde2.70005

Yiwei Zhang, Ziyang Liu, Tiandong Zhang, Yongquan Zhang, Yue Zhang, Qingguo Chi, Changhai Zhang

{"title":"Improvement in Insulation and Corona Resistance of PI by Incorporating SiO2 and AlN","authors":"Yiwei Zhang, Ziyang Liu, Tiandong Zhang, Yongquan Zhang, Yue Zhang, Qingguo Chi, Changhai Zhang","doi":"10.1049/nde2.70005","DOIUrl":"10.1049/nde2.70005","url":null,"abstract":"The rapid advancement of new energy vehicles has exposed critical limitations in conventional enamelled wire insulation materials for drive motors, particularly in meeting escalating operational demands. Polyimide is widely adopted in the motor insulation systems, and its inherent corona resistance remains insufficient under extreme conditions. Herein, we propose a strategy to improve the corona resistance of PI films or PI polymer based on the integration of silicon dioxide (SiO2) and aluminium nitride (AlN) nanoparticles. The results indicate that the excellent insulation of SiO2 and the high thermal conductivity of AlN can lead to a strong effect in improving the corona resistance life of PI. The resultant polymer film (MPI/ASA3) exhibits an excellent corona resistance life of 184.7 min which is 23.38 times higher than that of the MPI/1.0 vol% AOC film. Meanwhile, it still maintains excellent thermal and mechanical properties. Hopefully, our work could promote the advancement of the drive motor for new energy vehicle technology.","PeriodicalId":36855,"journal":{"name":"IET Nanodielectrics","volume":"8 1","pages":""},"PeriodicalIF":3.8,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/nde2.70005","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143861873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IF 3.8

IET Nanodielectrics Pub Date : 2025-04-23

引用次数: 0

Dipolar Polyimides With a Clever Balance in Dielectric Performance by Introducing a Twisted Fluorene Structure for the Development of Electronic Applications 通过引入扭曲芴结构实现介电性能巧妙平衡的偶极聚酰亚胺，用于电子应用的发展

IF 3.8

IET Nanodielectrics Pub Date : 2025-04-19 DOI: 10.1049/nde2.70006

Yu Zhang, Yadong Tang, Chujun Yang, Zheng Liu, Zhenhua Jiang, Yunhe Zhang

{"title":"Dipolar Polyimides With a Clever Balance in Dielectric Performance by Introducing a Twisted Fluorene Structure for the Development of Electronic Applications","authors":"Yu Zhang, Yadong Tang, Chujun Yang, Zheng Liu, Zhenhua Jiang, Yunhe Zhang","doi":"10.1049/nde2.70006","DOIUrl":"10.1049/nde2.70006","url":null,"abstract":"Polyimides with combined high thermal resistance and excellent electrical properties are specifically desired for various electrical and power electronic systems. However, traditional polyimide lacks functional groups with huge dipole moments and hence suffer from intrinsic inferior permittivity. Dipolar polymers, as potential high permittivity materials, have received considerable attention. Here, rigid and twisted fluorene groups are introduced into the polyimide backbone, containing urea groups in the side chain. The twisted fluorene structure provides free volume for dipole rotation, which can effectively improve the dipole mobility and avoid the problem of elevated dielectric loss caused by the dipole-flip lag, whereas the urea groups with high dipole moments contribute to the elevation of the permittivity. Ultimately, a clever balance between high permittivity and low dielectric loss is realised through the molecular structure design; BP-BU0.7 exhibits a high permittivity of 6.37 and a low dielectric loss of 0.0083 at room temperature and 1 kHz. Simultaneously, taking advantage of this characteristic, BP-BU0.7 is used as the gate dielectric for the organic thin-film transistor (OTFT), and the device exhibits outstanding field-effect properties with low threshold voltage (−0.96 V) and high carrier mobility (4.09 cm2 V−1 s−1) under low voltage (−5 V) operation. This polyimide material is considered as a potential dipole glass polymer dielectric for electronic applications.","PeriodicalId":36855,"journal":{"name":"IET Nanodielectrics","volume":"8 1","pages":""},"PeriodicalIF":3.8,"publicationDate":"2025-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/nde2.70006","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143850984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0