溅射功率对 Si (111) 上 c 轴取向氮化铝的强烈依赖性:结构和电学研究

IF 3.8 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Sandeep Sanjeeva, Jyothilakshmi Rudresh, K. B. Vinayakumar, K. K. Nagaraja
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引用次数: 0

摘要

利用反应磁控溅射技术在未加热的硅(111)基板上生长和控制氮化铝(AlN)薄膜的 c 轴取向是一项挑战。我们对氮浓度和溅射功率等溅射参数进行了有效调整,以生长出 c 轴取向的氮化铝薄膜。结果表明,低浓度(25%)的氮气足以在较低的流速下形成氮化铝,而较高的流速则需要较高浓度的氮气。要在低温和低功率条件下生长氮化铝,最好采用低浓度和低流速。X 射线衍射结果证实了生长的 AlN 薄膜结晶度的提高,并表明优先 c 轴取向与溅射功率密切相关。此外,还分析了溅射功率对微应变和应力的影响。通过场发射扫描电子显微镜进行的表面形貌研究和原子力显微镜测量的形貌显示了对溅射功率的依赖性。在表面粗糙度低、漏电流密度低(2 × 10-9 A/cm2)和介电常数低(6.8)的情况下,175 W 时观察到高 c 轴取向。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

A strong dependence of sputtering power on c-axis oriented aluminium nitride on Si (111): A structural and electrical study

A strong dependence of sputtering power on c-axis oriented aluminium nitride on Si (111): A structural and electrical study

Growing and controlling the c-axis orientation of the aluminium nitride (AlN) thin film on unheated Si (111) substrates using reactive magnetron sputtering are challenging. Sputtering parameters such as nitrogen concentration and sputtering power were effectively tuned to grow the c-axis oriented AlN thin film. The results show that a low concentration of (25%) N2 is enough for forming AlN at a reduced flow rate, whereas a higher flow rate requires a higher concentration of N2. Low concentration with a low flow rate is preferred to grow AlN at low temperature and power. The poor crystallinity of AlN with (100) orientation was improved by varying the power from 75 to 175 W. The X-ray diffraction results confirmed the improvisation of crystallinity of grown AlN films and indicated the strong dependence of preferred c-axis orientation on sputtering power. Also, the dependence of sputtering power on microstrain and stress was analysed. The surface morphology study by field emission scanning electron microscopy and topography measured by an atomic force microscope shows a dependence on sputtering power. The high c-axis orientation was observed at 175 W with low surface roughness, low leakage current density (2 × 10−9 A/cm2) and low dielectric constant (6.8).

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来源期刊
IET Nanodielectrics
IET Nanodielectrics Materials Science-Materials Chemistry
CiteScore
5.60
自引率
3.70%
发文量
7
审稿时长
21 weeks
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