H. Ayad, A. Khalil, M. Fadlallah, F. Ndagijimana, J. Jomaah
{"title":"Volumetric MSRR-based AMC for low-profile antenna application","authors":"H. Ayad, A. Khalil, M. Fadlallah, F. Ndagijimana, J. Jomaah","doi":"10.1109/MMS.2013.6663092","DOIUrl":"https://doi.org/10.1109/MMS.2013.6663092","url":null,"abstract":"This paper is dedicated to the study of volumetric MSRR-based AMC structure. The characteristics of a single MSRR unit cell are investigated; and a volumetric miniaturized AMC block is then designed. In order to validate the approach used to simulate an infinite periodic structure, a block of nine aligned layers is then simulated. The next step is to add a printed dipole antenna as an application to validate the performance of the AMC block. The results are very excellent and promising if compared with the simple dipole antenna as an enhancement of 5 dB is achieved considering the directivity. The front to back ratio is found to be about 20 dB.","PeriodicalId":361750,"journal":{"name":"2013 13th Mediterranean Microwave Symposium (MMS)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116072410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Study of budget link between on body antennas for WBAN applications","authors":"Z. Katbay, S. Sadek","doi":"10.1109/MMS.2013.6663102","DOIUrl":"https://doi.org/10.1109/MMS.2013.6663102","url":null,"abstract":"In this paper, the on-body performance of Higher Mode Microstrip Patch Antenna (HMMPA) antennas was investigated by measuring path gain S21 between two devices mounted on tissue-equivalent numerical and experimental phantoms, representative of human arm at 2.45 GHz. In particular, the study focused on the performance of a compact slotted (HMMPA). This antenna has a sufficient bandwidth for the operating requirements of the 2.45-GHz industrial, scientific, and medical (ISM) band and both antennas offered higher path gain compared to a fundamental-mode microstrip patch antenna. The overall dimensions of the proposed antenna are 37*37 mm. The influence of patient's arm movements on the radio channel has been simulated and measured.","PeriodicalId":361750,"journal":{"name":"2013 13th Mediterranean Microwave Symposium (MMS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116442496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Malli, B. Habib, G. Zaharia, G. El Zein, Y. Nasser, K. Kabalan
{"title":"New digital block implementation algorithm for MIMO channel hardware simulator","authors":"M. Malli, B. Habib, G. Zaharia, G. El Zein, Y. Nasser, K. Kabalan","doi":"10.1109/MMS.2013.6663142","DOIUrl":"https://doi.org/10.1109/MMS.2013.6663142","url":null,"abstract":"The hardware simulator facilitates the test and validation cycles by replicating channel artifacts in a controllable and repeatable laboratory environment. After a description of the MIMO channel models and the hardware simulator architecture, this paper presents new implementation algorithm of its digital block. The proposed algorithm allows the selection of specific environments and various scenarios, standards (LTE or WLAN 802.11ac) and Doppler speeds to implement the digital block architecture. The digital block architecture is implemented for 2×2 MIMO channel on a Xilinx Virtex-IV FPGA using batch and command line files. The occupation on the FPGA, the accuracy of the output signals and the latencies of the architecture for each configuration are then analyzed.","PeriodicalId":361750,"journal":{"name":"2013 13th Mediterranean Microwave Symposium (MMS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128980321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Calibrated oscilloscopic system for RF time-domain characterization of non-linear devices","authors":"K. El-Akhdar, G. Neveux, D. Barataud, J. Nebus","doi":"10.1109/MMS.2013.6663103","DOIUrl":"https://doi.org/10.1109/MMS.2013.6663103","url":null,"abstract":"This paper proposes a fully calibrated four channel high sampling rate oscilloscopic system based on the use of Track and Hold Amplifiers. The system achieves a high equivalent sampling rate (up to 1THz) using coherent interleaved sampling principle. An accurate calibration procedure allows a 10 kHz resolution over a 3 GHz bandwidth is applied. The capabilities of the system are presented and validated by characterizing a bandpass filter and an S-band 50 W GaN high power broadband amplifier under wideband CW pulsed signal excitation. S-parameters and power characteristics measurements are also presented. The fully calibrated system has the capability to give an accurate visualization of time-domain distortions of input/output voltage and current waveforms within the pulse. It also allows the determination of rising and falling transitions times of the pulse.","PeriodicalId":361750,"journal":{"name":"2013 13th Mediterranean Microwave Symposium (MMS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132510819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Effect of oxygen and water on the lifetime of organic solar cells","authors":"M. Chakaroun, R. Fawaz, B. Ratier","doi":"10.1109/MMS.2013.6663075","DOIUrl":"https://doi.org/10.1109/MMS.2013.6663075","url":null,"abstract":"Ageing of organic solar cells is still a problem to resolve before these devices can reach the market. This question can be addressed using different strategies including encapsulating materials, device design and buffer layers, with the latter being addressed in this paper. The shelf life of un-encapsulated small-molecule organic solar cells, (ITO/PEDOT-PSS/CuPC/C60/buffer layer/Al), have been studied under 100 mW/cm2 continuous illumination in open air with different thin buffer layers of bathocuproine (BCP), tris-8-hydroxy-quiolinato-aluminum (Alq3), 1,3,5-tris(2-N-phenylbenzimidazolyl) benzene (TPBI) and lithium fluoride (LiF). Changes in the main photovoltaic parameters upon ageing (power conversion efficiency, fill factor, open circuit voltage, short circuit current density, series and shunt resistances) have been monitored. In all cases two ageing mechanisms with two different time constants have been demonstrated and attributed to a rapid degradation of cathode contact followed by contamination of the active layer.","PeriodicalId":361750,"journal":{"name":"2013 13th Mediterranean Microwave Symposium (MMS)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124415400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Quarter wave retarders for optical communications","authors":"M. Habli, I. Elsayad","doi":"10.1109/MMS.2013.6663069","DOIUrl":"https://doi.org/10.1109/MMS.2013.6663069","url":null,"abstract":"This paper presents the design of quarter-wave retarders for the C and the L bands using two perpendicular reflective metals coated with a single layer thin film. The overall reflection of 81% is achieved for the quarter-wave retarder.","PeriodicalId":361750,"journal":{"name":"2013 13th Mediterranean Microwave Symposium (MMS)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126089922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Low frequency noise of InGaP/GaAs HBT at high injection: A comprehensive analysis of base-collector, base-emitter junctions and base layer TLM","authors":"A. Al Hajjar, K. Hadi, J. Nallatamby, M. Prigent","doi":"10.1109/MMS.2013.6663109","DOIUrl":"https://doi.org/10.1109/MMS.2013.6663109","url":null,"abstract":"Low frequency (LF) noise and especially trap assisted GR noise in semiconductor devices does not affect only the performances of radio frequency (RF) and microwave transmitters (oscillators) but also that of receivers (local oscillators, mixers). Measurement and simulation characterization tools of semiconductor devices become crucial in order to optimize their characteristics and circuit performances. In this paper, firstly we propose a low noise, wideband LF noise setup which allows to measure noise sources up to 10 MHz. Secondly, by using TCAD simulation tools of semiconductor devices, the origin of LF noise sources in InGaP/GaAs HBT is investigated. Many comparisons between numerical physics-based device noise simulation and LF noise measurement of base TLM, varactor base-collector junction and base-emitter heterojunction allow us to locate precisely the origin of LF noise of InGaP/GaAs HBT.","PeriodicalId":361750,"journal":{"name":"2013 13th Mediterranean Microwave Symposium (MMS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132837229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Input and output matched SiGe RF Mixer with High Dynamic Range","authors":"Zehra Gulru Cam, O. Palamutçuogullari","doi":"10.1109/ELECO.2013.6713915","DOIUrl":"https://doi.org/10.1109/ELECO.2013.6713915","url":null,"abstract":"Based on the Gilbert Mixer topology, an active mixer operating at 2.15 GHz is designed by using the transistors which are realized by using 0.25um SiGe technology. The active balun circuit at the input is realized by using the CB(common base) and CE(common emitter) transistors. The passive capacitive voltage-series feed-forward circuit is applied to CB circuit and an almost perfect broadband matching is obtained at the input. Theoretical calculations are done for noise figure. Current reduction technique is applied to switching transistors for noise decrease. Noise figure is decreased about 3 dB with current reduction. Mixer is simulated with AWR software environment. 5V DC supply voltage is used, OIP3 of 24.7 dBm and the Conversion Gain of 3 dB is obtained for the -2.5 dBm of LO power. The noise figure of the circuit is simulated as 11.75 dB.","PeriodicalId":361750,"journal":{"name":"2013 13th Mediterranean Microwave Symposium (MMS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126038539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design and experiment of RF rectifiers for wireless power transmission","authors":"A. Mabrouki, M. Latrach, Z. Sayegh","doi":"10.1109/MMS.2013.6663079","DOIUrl":"https://doi.org/10.1109/MMS.2013.6663079","url":null,"abstract":"This paper presents the design and experiment of series mounted diode rectifier and single stage voltage doubler rectifier at 2.45GHz for applications involving microwave power transmission. Input matching circuit and harmonics filtering at both the input and output have been optimized for high efficiency operation. The series topology is dedicated to low input power conversion. Measurement results show that 40% and 27% RF-DC conversion efficiency are achieved for 0 dBm and -5 dBm input power respectively at 2.45GHz. A maximum efficiency of 54% is obtained for an input power of 12 dBm and a 3V output DC voltage is measured at a 1KΩ DC load when the rectifier is matched to 50Ω. The voltage doubler structure is aimed for high input power conversion and exhibits more than 4V at 2.4GHz for input power above 15 dBm.","PeriodicalId":361750,"journal":{"name":"2013 13th Mediterranean Microwave Symposium (MMS)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126345601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Kacou, J. Polleux, M. Villegas, G. Chretien, A. Leborgne
{"title":"Design of a low noise TIA between 4.4 and 5 GHz for RoF applications on a GaAs pHEMT technology","authors":"C. Kacou, J. Polleux, M. Villegas, G. Chretien, A. Leborgne","doi":"10.1109/MMS.2013.6663081","DOIUrl":"https://doi.org/10.1109/MMS.2013.6663081","url":null,"abstract":"In this paper a low noise trans-impedance amplifier (TIA) is presented between 4.4 GHz and 5 GHz in a GaAs pHEMT technology using a commercial photodiode. Using a narrow-band design's technique of photo-receiver basis on microwave approaches to design a low noise amplifier, we increase the bandwidth. The photo-receiver provides an equivalent input noise current density of 5.5 pA/VHz at 4.6 GHz.","PeriodicalId":361750,"journal":{"name":"2013 13th Mediterranean Microwave Symposium (MMS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127203929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}