基于GaAs pHEMT技术的RoF应用4.4 ~ 5ghz低噪声TIA设计

2013 13th Mediterranean Microwave Symposium (MMS) Pub Date : 2013-09-01 DOI:10.1109/MMS.2013.6663081

C. Kacou, J. Polleux, M. Villegas, G. Chretien, A. Leborgne

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引用次数: 0

摘要

本文提出了一种采用商用光电二极管的GaAs pHEMT技术，在4.4 GHz和5 GHz之间的低噪声跨阻抗放大器(TIA)。利用基于微波方法的光接收机窄带设计技术设计了低噪声放大器，提高了放大器的带宽。该光电接收器在4.6 GHz时提供5.5 pA/VHz的等效输入噪声电流密度。

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Design of a low noise TIA between 4.4 and 5 GHz for RoF applications on a GaAs pHEMT technology

In this paper a low noise trans-impedance amplifier (TIA) is presented between 4.4 GHz and 5 GHz in a GaAs pHEMT technology using a commercial photodiode. Using a narrow-band design's technique of photo-receiver basis on microwave approaches to design a low noise amplifier, we increase the bandwidth. The photo-receiver provides an equivalent input noise current density of 5.5 pA/VHz at 4.6 GHz.

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2013 13th Mediterranean Microwave Symposium (MMS)

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