发布求助
文献互助 智能选刊 最新文献

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium最新文献

筛选
英文 中文
3.1-4.7GHz WiMedia UWB RF/Analog Front-End in 130nm CMOS 3.1-4.7GHz WiMedia UWB射频/模拟前端130nm CMOS
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380866
M. Lynch, C. Demirdag, N. Belabbes, S. Carnevali, C. Lacy, M. Yu, A. Burns, W. An, H. Jin, J. Park, D. Malhi
{"title":"3.1-4.7GHz WiMedia UWB RF/Analog Front-End in 130nm CMOS","authors":"M. Lynch, C. Demirdag, N. Belabbes, S. Carnevali, C. Lacy, M. Yu, A. Burns, W. An, H. Jin, J. Park, D. Malhi","doi":"10.1109/RFIC.2007.380866","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380866","url":null,"abstract":"A highly integrated transceiver for WiMedia UWB applications is presented. Implemented in 130 nm CMOS and operating from 1.2 V and 2.5 V supplies, it features direct conversion transmit and receive paths. Three PLLs with ring-oscillator VCOs are used in a fast-hopping (~2 ns) frequency synthesizer. On-chip calibration is used by several blocks for I/Q mismatch, filter tuning, DC offset cancellation and power control. The transceiver achieves a transmit EVM better than -20.6 dB when operated in 480 Mbps mode.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114534657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 10GHz Distributed Voltage Controlled Oscillator for WLAN Application in a VLSI 65nm CMOS Process 用于WLAN的10GHz分布式压控振荡器在VLSI 65nm CMOS工艺中的应用
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380845
N. Seller, Andreia Cathelin, H. Lapuyade, J. Bégueret, E. Chataigner, Didier Belot
{"title":"A 10GHz Distributed Voltage Controlled Oscillator for WLAN Application in a VLSI 65nm CMOS Process","authors":"N. Seller, Andreia Cathelin, H. Lapuyade, J. Bégueret, E. Chataigner, Didier Belot","doi":"10.1109/RFIC.2007.380845","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380845","url":null,"abstract":"This work demonstrates the feasibility of a distributed voltage controlled oscillator (DVCO) designed for WLAN applications in a 65 nm CMOS process with standard VLSI backend. This DVCO achieves a tuning range of 1.1 GHz (from 10.6 GHz to 11.7 GHz) and a measured phase noise of -116 dBc/Hz at 1 MHz offset from the carrier. To achieve such performances, the DVCO consumes a DC current of 36 mA from a 2 V power supply.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125737402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
MOSFET Model Extraction Using 50GHz Four-Port Measurements 使用50GHz四端口测量的MOSFET模型提取
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380966
J. Brinkhoff, S. Rustagi, Jinglin Shi, F. Lin
{"title":"MOSFET Model Extraction Using 50GHz Four-Port Measurements","authors":"J. Brinkhoff, S. Rustagi, Jinglin Shi, F. Lin","doi":"10.1109/RFIC.2007.380966","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380966","url":null,"abstract":"An accurate and efficient method to extract an equivalent circuit model of a MOSFET is presented. Four-port measurements simplify the determination of important elements, such as the substrate networks. These measurements are also used to extract the MOSFET extrinsic parasitic elements. The accuracy of the model extraction is verified by simulation and measurement to 50 GHz.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124682860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
5-GHz Frequency Synthesizer With Auto-Calibration Loop 带有自动校准环路的5ghz频率合成器
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380982
Myeungsu Kim, Kwengmook Lee, Yong-Il Kwon, Joonhyung Lim, T. Park
{"title":"5-GHz Frequency Synthesizer With Auto-Calibration Loop","authors":"Myeungsu Kim, Kwengmook Lee, Yong-Il Kwon, Joonhyung Lim, T. Park","doi":"10.1109/RFIC.2007.380982","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380982","url":null,"abstract":"A 5-GHz frequency synthesizer for ZIGBEE(IEEE 802.15.4) was implemented. It consumes 13.5 mW adopting CMOS Logic divider and robust VCO from process and temperature variation by body voltage control of current source. It incorporates an automatic capacitor-bank tuning loop to extend frequency tuning range. This synthesizer was fabricated in 0.18-um technology; it consumes 7.5 mA at 1.8 V and offers 100 kHz-loop bandwidth and always -103 dBc/Hz at an offset of 1 MHz. the lock time is 30 us. The PLL output tuning range is 14% from 2.258 GHz to 2.614 GHz.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129866536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A 9-Bit 9.6GHz 1.9W Direct Digital Synthesizer RFIC Implemented In 0.18μm SiGe BiCMOS Technology 采用0.18μm SiGe BiCMOS技术实现的9位9.6GHz 1.9W直接数字合成器RFIC
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380874
Xuefeng Yu, F. Dai, Dayu Yang, V. Kakani, J. Irwin, R. Jaeger
{"title":"A 9-Bit 9.6GHz 1.9W Direct Digital Synthesizer RFIC Implemented In 0.18μm SiGe BiCMOS Technology","authors":"Xuefeng Yu, F. Dai, Dayu Yang, V. Kakani, J. Irwin, R. Jaeger","doi":"10.1109/RFIC.2007.380874","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380874","url":null,"abstract":"This paper presents a low power SiGe DDS MMIC with 9-bit phase and 8-bit amplitude resolution. Using more than 9600 transistors, the active area of the DDS is 2.3 × 0.7 mm2. The maximum clock frequency was measured at 9.6 GHz with 4.8 GHz Nyquist output. The DDS MMIC consumes 1.9 W power consumption under 3.3 V/4.0 V dual power supplies. The DDS achieves the best reported power efficiency figure of merit of 5.1 GHz/W. The measured SFDR is 30 dBc with 2.4 GHz outputs at the maximum clock frequency.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129577218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A 5.2 GHz BFSK Receiver with On-Chip Antenna for Self-Powered RFID Tags and Medical Sensors 用于自供电RFID标签和医疗传感器的带片上天线的5.2 GHz BFSK接收器
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380971
P. Popplewell, V. Karam, A. Shamim, J. Rogers, C. Plett
{"title":"A 5.2 GHz BFSK Receiver with On-Chip Antenna for Self-Powered RFID Tags and Medical Sensors","authors":"P. Popplewell, V. Karam, A. Shamim, J. Rogers, C. Plett","doi":"10.1109/RFIC.2007.380971","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380971","url":null,"abstract":"A completely integrated receiver design suitable for short range wireless applications is presented. The circuit represents one half of an SoC solution that makes use of an on-chip antenna, and consumes 5.5 mW while receiving. A thin film ultracapacitor and a solar cell can be stacked on top of the chip to supply power to the radio; yielding a completely integrated solution. The receiver makes use of a PLL to initially lock an RF VCO which is then allowed to be injection-locked to an incoming FM signal. An integrated antenna provides adequate gain given the short range radio's intended applications. The solution has a communication range of 1.75 m which can be increased at the expense of the bit-rate, increased power consumption in the receiver, or by using off-chip antennas.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130766525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The Present State of the Art of Wide-Bandgap Semiconductors and Their Future 宽频带隙半导体技术的现状及其未来
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380855
M. Rosker
{"title":"The Present State of the Art of Wide-Bandgap Semiconductors and Their Future","authors":"M. Rosker","doi":"10.1109/RFIC.2007.380855","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380855","url":null,"abstract":"This paper summarizes recent improvements in the performance and reliability of microwave and millimeter-wave wide-bandgap gallium nitride on silicon carbide devices and their promise for future integrated circuits. Many recent advances have been made as a result of the on-going Phase II wide band gap semiconductor for RF applications (WBGS-RF) program funded by the Defense Advanced Research Projects Agency (DARPA). During Phase II of the program, significant progress has been made toward realizing wide-bandgap devices that provide outstanding performance at reliability levels that will allow their use in a wide variety of high power applications.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132482868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
A dual-band high efficiency CMOS transmitter for wireless CDMA applications 用于无线CDMA应用的双频高效CMOS发射机
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380825
J. Deng, M. Chew, S. Vora, M. Cassia, T. Marra, K. Sahota, V. Aparin
{"title":"A dual-band high efficiency CMOS transmitter for wireless CDMA applications","authors":"J. Deng, M. Chew, S. Vora, M. Cassia, T. Marra, K. Sahota, V. Aparin","doi":"10.1109/RFIC.2007.380825","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380825","url":null,"abstract":"A dual-band transmitter integrated circuit (TxIC), including baseband filter and variable gain amplifier (VGA), upconverter, RF VGA, driver amplifier (DA), is implemented in 0.18 mum CMOS for CDMA applications. The TxIC increases the handset talk time dramatically with the PA-bypass feature. The chip provides more than a total power control range of 80 dB and a fine gain step of 0.25 dB/LSB. The chip achieves 52.3 dBc ACPR at +7 dBm output power with 52.2 mA and 51.7 dBc ACPR at +7 dBm output power with 51.9 mA for low band and high band applications respectively.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127942575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A Bondpad-Size Narrowband LNA for Digital CMOS 一种带键垫大小的数字CMOS窄带LNA
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380973
J. Borremans, P. Wambacq, G. van der Plas, Y. Rolain, M. Kuijk
{"title":"A Bondpad-Size Narrowband LNA for Digital CMOS","authors":"J. Borremans, P. Wambacq, G. van der Plas, Y. Rolain, M. Kuijk","doi":"10.1109/RFIC.2007.380973","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380973","url":null,"abstract":"The need for a high level of integration in wireless and multi-standard radios, as well as the expensive area in downscaled CMOS pushes towards low-area circuit solutions. Feedback-type inductorless LNAs are such an example. This paper demonstrates a bondpad-size feedback type narrowband LNA using only one stacked inductor. The gain is 20.8 dB at 3.4 GHz with a noise figure of 2.2 dB. This solution is many times smaller than a classical LNA configuration with several inductors, while obtaining similar performance. It is thus an appealing solution for low-area radio integration in digital CMOS.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"212 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123286500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Hot Carrier Degradation and Performance of 65nm RF n-MOSFET 65nm RF n-MOSFET的热载流子退化及性能
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380944
M. Fakhruddin, Mao-Chyuan Tang, J. Kuo, J. Karp, D. Chen, C. Yeh, S. Chien
{"title":"Hot Carrier Degradation and Performance of 65nm RF n-MOSFET","authors":"M. Fakhruddin, Mao-Chyuan Tang, J. Kuo, J. Karp, D. Chen, C. Yeh, S. Chien","doi":"10.1109/RFIC.2007.380944","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380944","url":null,"abstract":"Hot carrier stress (HCS) induces significant degradation on the performance of 65 nm RF n-MOSFET with minimum poly length (Lpoly). Although the cutoff frequency (Ft) is very high (~212 GHz) for these devices, the high HCS degradation poses a challenge for RF application. Additional effort will be needed to improve the process and/or device to take full advantage of the record n-MOSFET performance.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116080580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信