采用0.18μm SiGe BiCMOS技术实现的9位9.6GHz 1.9W直接数字合成器RFIC

Xuefeng Yu, F. Dai, Dayu Yang, V. Kakani, J. Irwin, R. Jaeger
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引用次数: 11

摘要

本文提出了一种具有9位相位分辨率和8位幅度分辨率的低功耗SiGe DDS MMIC。采用9600多个晶体管,DDS的有效面积为2.3 × 0.7 mm2。最大时钟频率为9.6 GHz,奈奎斯特输出为4.8 GHz。DDS MMIC在3.3 V/4.0 V双路供电时功耗为1.9 W。DDS达到了报道的最佳功率效率值5.1 GHz/W。测量到的SFDR为30dbc,最大时钟频率为2.4 GHz输出。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 9-Bit 9.6GHz 1.9W Direct Digital Synthesizer RFIC Implemented In 0.18μm SiGe BiCMOS Technology
This paper presents a low power SiGe DDS MMIC with 9-bit phase and 8-bit amplitude resolution. Using more than 9600 transistors, the active area of the DDS is 2.3 × 0.7 mm2. The maximum clock frequency was measured at 9.6 GHz with 4.8 GHz Nyquist output. The DDS MMIC consumes 1.9 W power consumption under 3.3 V/4.0 V dual power supplies. The DDS achieves the best reported power efficiency figure of merit of 5.1 GHz/W. The measured SFDR is 30 dBc with 2.4 GHz outputs at the maximum clock frequency.
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