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2018 International Conference on Radiation Effects of Electronic Devices (ICREED)最新文献

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Single Event Dielectric Rupture Phenomenon in Amorphous Silicon based MIM Structures 非晶硅基MIM结构中的单事件介电破裂现象
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905078
Suzhen Wu, Haiming Xu, Ruocheng Zheng, G. Hong, Jianwei Wu, Yinquan Wang, Yang Zhou
{"title":"Single Event Dielectric Rupture Phenomenon in Amorphous Silicon based MIM Structures","authors":"Suzhen Wu, Haiming Xu, Ruocheng Zheng, G. Hong, Jianwei Wu, Yinquan Wang, Yang Zhou","doi":"10.1109/ICREED.2018.8905078","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905078","url":null,"abstract":"This paper reports the phenomenon of single event dielectric rupture (SEDR) in amorphous silicon (α-Si) materials. Heavy ion induced failures in α-Si MIM structures were studied for LETs from 37 MeV-cm2/mg to 99 MeV-cm2/mg to assessing the risk of SEGR. The failure voltage threshold for SEDR was found to be inversely proportional to the ion LET and however independent to α-Si thickness to a certain extent. Based on the current transport behavior of the metal-amorphous films contacts, it is presumed that the charges injecting into the heavy ion induced plasma pipe occur under saturated velocity conditions for α-Si MIM structures.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124112401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel Universal Radiation-hardened FFT Chip Design 一种新型通用抗辐射FFT芯片设计
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905107
Chenguang Guo, Jiancheng Xu, Shuang Jiang, Yinlong An, Lipeng Yue
{"title":"A Novel Universal Radiation-hardened FFT Chip Design","authors":"Chenguang Guo, Jiancheng Xu, Shuang Jiang, Yinlong An, Lipeng Yue","doi":"10.1109/ICREED.2018.8905107","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905107","url":null,"abstract":"This paper presents a system-level radiation-hardened method for a universal FFT chip, with which radiation-sensitive elements are hardened precisely, FFT chip’s reliability is further improved by frame independent processing technology, and irradiation experiment is simplified. This chip is realized by 0.18μm CMOS process, with excellent anti-irradiation performance.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128127038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Total Dose Effects on Novel Al/TiO2/n-Ge Metal-Insulator-Semiconductor Contacts under Gamma-ray Irradiation γ射线辐照下新型Al/TiO2/n-Ge金属-绝缘体-半导体接触的总剂量效应
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905077
Yi Zhang, G. Han, Hengsheng Shan, Yan Liu, Jincheng Zhang, Y. Hao
{"title":"Total Dose Effects on Novel Al/TiO2/n-Ge Metal-Insulator-Semiconductor Contacts under Gamma-ray Irradiation","authors":"Yi Zhang, G. Han, Hengsheng Shan, Yan Liu, Jincheng Zhang, Y. Hao","doi":"10.1109/ICREED.2018.8905077","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905077","url":null,"abstract":"This work demonstrates the total dose effects of novel Al/TiO2/n-Ge MIS contacts under gamma-ray irradiation. After gamma-ray irradiation, both the forward and reverse current density for the MIS contacts degraded. Electrical and XPS results indicated that the irradiation induces large amount of oxygen vacancies in TiO2, but this will not degrade the characteristic. Thus, a conclusion may draw that the degradation is attributed to the inter-diffusion of TiO2 and Al, forming high resistance interface between TiO2 and Al.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123806965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Construction Method of Device Model of Proton SEU Analysis Based on Heavy Ion Test Data 基于重离子试验数据的质子SEU分析装置模型构建方法
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905108
Li Yan-cun, Yu Deng-yun, Zhang Qing-xiang, Cai Zhen-bo, Jia Xiao-yu, Wang Ying
{"title":"Construction Method of Device Model of Proton SEU Analysis Based on Heavy Ion Test Data","authors":"Li Yan-cun, Yu Deng-yun, Zhang Qing-xiang, Cai Zhen-bo, Jia Xiao-yu, Wang Ying","doi":"10.1109/ICREED.2018.8905108","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905108","url":null,"abstract":"Some key parameters of model used in proton SEU cross section simulation are not easy to get. By setting sub-volume collecting efficiency and dimension from heavy ion test data, a model totally based on heavy ion test data is established, which is independent of critical charge. The modeling method is verified by heavy ion and proton test data of Xilinx XC2V1000 and XC4VSX55 FPGA. The difference of proton SEU cross section between simulation result with the established model and test data is less than 41% above 40MeV of proton.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125006240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel Highly Reliable and Low-power Radiation Hardened SRAM bitcell design 一种新型高可靠、低功耗抗辐射SRAM位元设计
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905092
D. Lin, Yiran Xu, Xiaonian Liu, Wenyi Zhu, Lihua Dai, Mengying Zhang, Xiaoyun Li, Xin Xie, Jianwei Jiang, Huilong Zhu, Zhengxuan Zhang, S. Zou
{"title":"A Novel Highly Reliable and Low-power Radiation Hardened SRAM bitcell design","authors":"D. Lin, Yiran Xu, Xiaonian Liu, Wenyi Zhu, Lihua Dai, Mengying Zhang, Xiaoyun Li, Xin Xie, Jianwei Jiang, Huilong Zhu, Zhengxuan Zhang, S. Zou","doi":"10.1109/ICREED.2018.8905092","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905092","url":null,"abstract":"In this paper, an improved SEU hardened SRAM bit-cell, based on the SEU physics mechanism and reasonable circuit-design, is proposed. The simulation results show that the SRAM cell can provide full immunity for single node upset and multiple-node upset. Besides, it is suitable for low-power application.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"897 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123259635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A Kind of Resilient Latch Structure Base on Cross-coupled Transistors 一种基于交叉耦合晶体管的弹性锁存结构
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905102
Xin Liu, Lei Xie, L. Zhong, Guoping Xiao
{"title":"A Kind of Resilient Latch Structure Base on Cross-coupled Transistors","authors":"Xin Liu, Lei Xie, L. Zhong, Guoping Xiao","doi":"10.1109/ICREED.2018.8905102","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905102","url":null,"abstract":"In digital circuits, memories, like SRAMs, latches and flip-flops, are extremely susceptible to various radiation effects. This paper proposes a double-node upset (DNU) resilient latch called \"Octahedron\", which is completely composed of cross-coupled transistors. Advantages with respect to area, power delay product and resilient ability are revealed when our design is compared with previously reported latches. Finally, a formula for coarse estimation of DNU resilient latch failure probability is proposed. Octahedron shows lowest failure probability when the probability of single node upset (SNU) is small.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121422929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research of Wideband Radiation-Hardened Frequency Synthesizer for Space Application 空间应用宽带抗辐射频率合成器的研究
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905104
Xiaodong Han, Chong Duan, Yongfeng Li, Jiaxing Sun, Hui Liu, Wu Wen, Xinyu Li
{"title":"Research of Wideband Radiation-Hardened Frequency Synthesizer for Space Application","authors":"Xiaodong Han, Chong Duan, Yongfeng Li, Jiaxing Sun, Hui Liu, Wu Wen, Xinyu Li","doi":"10.1109/ICREED.2018.8905104","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905104","url":null,"abstract":"The paper is focused on features of the frequency synthesizer in space applications. Meanwhile, in combination with a kind of newly researched radiation-hardened C-band wideband frequency synthesizer, radiation-hardened-by-design (RHBD) methods are analyzed, and through the test, data about how the device adapts to radiation environment is garnered. On this basis, it is found that the device is able to tolerate a total ionizing dose (TID) of no less than 100krad (Si), and its single event latch-up (SEL) threshold is no less than 75MeV∙cm2/mg, single event function interrupt (SEFI) threshold is no less than 37 MeV∙cm2/mg, operating frequency coverage ranges from 0.5 to 5.8GHz, and phase noise is lower than -75dBc/Hz@1kHz. These findings can serve as a reference for applying the device to aerospace.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"171 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126989539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single Event Rate Prediction Method for Advanced CMOS Technologies 先进CMOS技术的单事件率预测方法
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905071
A. Sogoyan, A. Chumakov, A. Smolin
{"title":"Single Event Rate Prediction Method for Advanced CMOS Technologies","authors":"A. Sogoyan, A. Chumakov, A. Smolin","doi":"10.1109/ICREED.2018.8905071","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905071","url":null,"abstract":"The paper presents a new method of SER prediction based on a diffusion charge collection model. The proposed method is intended as a replacement for the IRPP method, which validity is impaired by a grooving number of issues when applied to modern CMOS devices.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132749830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the Degradation Rate in DPSA Bipolar Transistor under Gamma Irradiation γ辐照下DPSA双极晶体管降解率的研究
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905053
Mohan Liu, S. Yao, Cheng-fa He, Q. Guo, Wu Lu, Xin Wang, Xiaolong Li, Xing Yu, Jing Sun, Peijian Zhang, Xue Wu, Xinyu Wei
{"title":"Investigation of the Degradation Rate in DPSA Bipolar Transistor under Gamma Irradiation","authors":"Mohan Liu, S. Yao, Cheng-fa He, Q. Guo, Wu Lu, Xin Wang, Xiaolong Li, Xing Yu, Jing Sun, Peijian Zhang, Xue Wu, Xinyu Wei","doi":"10.1109/ICREED.2018.8905053","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905053","url":null,"abstract":"We present the dose-rate effect and emitter size effect of DPSA bipolar transistors under gamma ray irradiation. Results indicated there have an ELDRS effect exist and the effects are discussed from the perspective of degradation rate.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129530216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research of Single-event-hardened High Performance SerDes Circuit 单事件强化高性能伺服电路的研究
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905058
Lei Sun, H. Zhao, Jinchao Li, Zhiqiang Zhu, Changlei Feng, Jian Zhang
{"title":"Research of Single-event-hardened High Performance SerDes Circuit","authors":"Lei Sun, H. Zhao, Jinchao Li, Zhiqiang Zhu, Changlei Feng, Jian Zhang","doi":"10.1109/ICREED.2018.8905058","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905058","url":null,"abstract":"In this paper, a high performance single-event-hardened SerDes circuit (BLK2711MQRH) and its evaluation system are designed. Compared with TLK2711-SP of Texas Instruments (TI), the anti-irradiation performance of BLK2711MQRH is better.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122435333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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