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2018 International Conference on Radiation Effects of Electronic Devices (ICREED)最新文献

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Experimental Finding for Single Event Dielectric Rupture of MOS Capacitor in GaN-based Power Device gan基功率器件中MOS电容单事件介电破裂的实验研究
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905062
Yu Qingkui, Wen Ping, Sun Yi, Wang Zheli, Mei Bo, Li Xiaoliang, Lv He, Li Pengwei, Luo Lei, Tang Min
{"title":"Experimental Finding for Single Event Dielectric Rupture of MOS Capacitor in GaN-based Power Device","authors":"Yu Qingkui, Wen Ping, Sun Yi, Wang Zheli, Mei Bo, Li Xiaoliang, Lv He, Li Pengwei, Luo Lei, Tang Min","doi":"10.1109/ICREED.2018.8905062","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905062","url":null,"abstract":"Heavy ion test was conducted on gallium nitride (GaN) based power device to assess the Single Event Effect (SEE) sensitivity. Catastrophic failure was found on GaN-based power device irradiated by 205-MeV germanium (Ge) ion. It was due to Single Event Dielectric Rupture (SEDR) of metal oxide semiconductor (MOS) capacitor. The SEDR of MOS capacitor was function of bias voltage and the Linear Energy Transfer (LET) of incident heavy ion. It is recommended that the heavy ion test should be performed for SEDR for power device made of MOS capacitor","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114517006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling of total dose radiation effect on impact ionization rate in sub-threshold region for partially-depleted SOI NMOSFET 部分耗尽SOI NMOSFET亚阈值区冲击电离率的总剂量辐射效应模拟
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905091
Kuang Qianwei, Qin Shanshan, Ning Yong-cheng, Zhang Dayu, Cong Shan, Chang Mingchao
{"title":"Modeling of total dose radiation effect on impact ionization rate in sub-threshold region for partially-depleted SOI NMOSFET","authors":"Kuang Qianwei, Qin Shanshan, Ning Yong-cheng, Zhang Dayu, Cong Shan, Chang Mingchao","doi":"10.1109/ICREED.2018.8905091","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905091","url":null,"abstract":"Based on the analysis of total dose effect and hot-carrier effect, two analytical models of channel electric field are developed for partially-depleted SOI NMOSFET biased in \"on\" and \"off\" operations respectively. The maximum electric fields derived from these models account for the different extents of impact ionization rate reduction along sub-threshold region for both cases by introducing specific distribution of radiation-induced charges inside the gate oxide layer. An approximate calculation method is also presented to quantify this effect instead of complicated integral operation.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115299052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SEE Assessment Software Design of Processor Device 处理器器件SEE评估软件设计
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/icreed.2018.8905106
Hongwei Liu, Qun Zhang
{"title":"SEE Assessment Software Design of Processor Device","authors":"Hongwei Liu, Qun Zhang","doi":"10.1109/icreed.2018.8905106","DOIUrl":"https://doi.org/10.1109/icreed.2018.8905106","url":null,"abstract":"According to the characteristics of the processor devices, the structure design of the processor device SEE assessment is introduced. The composition, design process and the matters of attention of the processor device SEE assessment software are explained in detail.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123616048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of TID Effects on Subthreshold Bandgap Reference Circuits Fabricated in a SOI Process TID对SOI制程下阈值带隙参考电路影响的研究
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905099
Zhuojun Chen, D. Ding, Y. Shan, Yemin Dong
{"title":"Investigation of TID Effects on Subthreshold Bandgap Reference Circuits Fabricated in a SOI Process","authors":"Zhuojun Chen, D. Ding, Y. Shan, Yemin Dong","doi":"10.1109/ICREED.2018.8905099","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905099","url":null,"abstract":"This work presents subthreshold bandgap voltage reference circuits in a 130 nm SOI process, and investigates their total ionizing dose (TID) effects. The design with thick gate oxide suffers more serious than that with thin gate oxide, but its voltage variation is still much smaller than that of BJT bandgap. During irradiation, reference voltage firstly increases and then decreases, due to the competing effects of leakage current increase and threshold voltage shift.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121035195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis of single event effects in multifunctional CMOS APSs 多功能CMOS aps单事件效应分析
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905051
Liu Liyan, Zhu Qingwei, Dong Shan, Wang Liang, Zhao Yuan-fu
{"title":"Analysis of single event effects in multifunctional CMOS APSs","authors":"Liu Liyan, Zhu Qingwei, Dong Shan, Wang Liang, Zhao Yuan-fu","doi":"10.1109/ICREED.2018.8905051","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905051","url":null,"abstract":"According to the circuit structure and working principle of CMOS APSs, the single event effect and its producing mechanism are discussed in detail. Through a set of detailed experimental data and chart analysis, introduces a set of effective single event test methods for CMOS APSs. The experimental data and analysis results are not only helpful to improve the design of RHBD of CMOS APSs but also effectively carry out some research on ray monitoring and detection.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133347572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulations of radiation damage in spacecraft camera for ESA JUICE mission 欧空局JUICE航天器相机辐射损伤模拟
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905096
Hualin Xiao, W. Hajdas, S. Beauvivre, D. Kraehenbuehl, R. Ziethe, N. Banerji
{"title":"Simulations of radiation damage in spacecraft camera for ESA JUICE mission","authors":"Hualin Xiao, W. Hajdas, S. Beauvivre, D. Kraehenbuehl, R. Ziethe, N. Banerji","doi":"10.1109/ICREED.2018.8905096","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905096","url":null,"abstract":"The JUpiter ICy moons Explorer (JUICE) is an ESA interplanetary spacecraft being developed to perform detailed investigations of the Jupiter system and three of its icy moons: Europa, Callisto and Ganymede. The emphasis will be given on Ganymede as a small planetary body to be studied as a potential habitat. The spacecraft is set for launch in 2022 and would reach Jupiter in 2030. Two identical optical cameras are proposed for the mission to monitor the spacecraft and its surroundings. The sensors of the cameras need to be protected from hazardous radiation levels caused by extremely high fluxes of very energetic electrons. A precise model of the camera was developed to be used for intense Monte Carlo simulations performed to optimize the shielding and to determine the radiation damage during the mission. Simulations included determination of the total ionizing and non-ionizing doses in the sensors and crucial electronic components. This paper presents both simulation methods and results.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114737211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An Upper Bounder Evaluation Method of Error Probability for SRAM FPGA 一种基于SRAM FPGA的误差概率上界评估方法
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905094
Jia Xiaoyu, Yu Dengyun, Zhang Qingxiang, Cai Zhengbo, Li Yancun, Wang Ying, Qin Shanshan
{"title":"An Upper Bounder Evaluation Method of Error Probability for SRAM FPGA","authors":"Jia Xiaoyu, Yu Dengyun, Zhang Qingxiang, Cai Zhengbo, Li Yancun, Wang Ying, Qin Shanshan","doi":"10.1109/ICREED.2018.8905094","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905094","url":null,"abstract":"Because of the high integration, low cost and high performance, SRAM FPGAs are becoming increasingly attractive in space missions. However SRAM FPGAs are vulnerable to SEU , so SEU protective measures must be taken and the fault-tolerant capability of FPGA application should be evaluated before it was deployed on obit. In this paper, the relationship between the number of SEU and error probability of SRAM FPGAs was studied by a model, and this relationship was validated by both fault injection and heavy ion irradiation experiment. Then on the base of it, a quick method to evaluate the upper bounder of the error probability for the FPGA application was proposed, and by this method, the error probability of the FPGA’s application can be achieve by fewer fault injection campaigns.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"21 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134128150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of FPGA Mitigation Improvement to Energetic Protons FPGA对高能质子抑制性能的改进分析
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905057
Wang Ying, Yu Deng-yun, Li Yan-cun, Zhang Qing-xiang, Jia Xiao-yu, Sheng Li-yan, Zheng Yu-zhan, Qin Shan-shan, Cai Zhen-bo
{"title":"Analysis of FPGA Mitigation Improvement to Energetic Protons","authors":"Wang Ying, Yu Deng-yun, Li Yan-cun, Zhang Qing-xiang, Jia Xiao-yu, Sheng Li-yan, Zheng Yu-zhan, Qin Shan-shan, Cai Zhen-bo","doi":"10.1109/ICREED.2018.8905057","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905057","url":null,"abstract":"we present a model for analyzing the mitigation improvement of single event upset (SEU) for triple modular redundant (TMR)-Field Programmable Gate Arrays (FPGAs) to energetic protons. Based on the cross section versus proton energy curve by Weibull fit, system failure rates of Non-TMR and TMR designs for Xilinx Virtex-4 FPGA were calculated as an example to explain this model. Energetic proton test data was shown to fit the model. Analysis result showed that TMR and scrubbing mitigation could decrease the system failure rate to 18.5 times compared with Non-TMR, and the test result was 14.8 times. The deviation between the analysis and test was about 20%.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128044848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Charge Collection of twin well PN junction in 65 nm CMOS Inverter 65纳米CMOS逆变器双阱PN结的电荷收集
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905103
Sui Chenglong, Wang Liang, Liu Jia-Qi, LI Tong-De, Shu Lei, Wang Bi, LI Yuan, Cao Wei-Yi, Zhao Yuan-Fu
{"title":"Charge Collection of twin well PN junction in 65 nm CMOS Inverter","authors":"Sui Chenglong, Wang Liang, Liu Jia-Qi, LI Tong-De, Shu Lei, Wang Bi, LI Yuan, Cao Wei-Yi, Zhao Yuan-Fu","doi":"10.1109/ICREED.2018.8905103","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905103","url":null,"abstract":"The charge collection of PN junction between wells will obviously extend the SET (single event transient) pulse width due to the accumulation of excess carrier via drift and diffuse process. The results of the heavy Ion irradiation experiments show that different n-well structures influence the SET pulse width. Further TCAD simulations were carried out to verify the PN junction between wells cause parasitic PNP bipolar transistor open for longer time. Results show that junction formed by p-well and n-well lead to worse recovery feature of 65nm CMOS inverter.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126453841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Progress of SEB and SEGR Irradiation Hardening Technology for Power MOSFET 功率MOSFET的SEB和SEGR辐照硬化技术进展
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905059
Zhaohuan Tang, Xingji Li, K. Tan, Chaoming Liu, Xian Chen, Xing-hua Fu
{"title":"The Progress of SEB and SEGR Irradiation Hardening Technology for Power MOSFET","authors":"Zhaohuan Tang, Xingji Li, K. Tan, Chaoming Liu, Xian Chen, Xing-hua Fu","doi":"10.1109/ICREED.2018.8905059","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905059","url":null,"abstract":"This paper analyses the failure mechanism and striking process of heavy ions irradiated vertical double diffusion power metal-oxide-semiconductor field effect transistor(VDMOS), concludes three irradiation hardening technologies, shielding technology, recombination technology and enhancement technology, summarizes the development of single-event irradiation hardening technologies for power VDMOS in domestic and international.These technologies could provide reference for the researchers who are engaging in the single-event irradiation hardening technology of semiconductor device.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"176 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120958901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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