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2018 International Conference on Radiation Effects of Electronic Devices (ICREED)最新文献

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Study on the Tracking & Pointing Accuracy Degeneration of Optical Communication System for CMOS Sensor Irradiation Damage CMOS传感器辐照损伤下光通信系统跟踪指向精度退化的研究
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905073
Xiaoliang Li, Pengwei Li, Qingkui Yu, Lei Luo, B. Mei
{"title":"Study on the Tracking & Pointing Accuracy Degeneration of Optical Communication System for CMOS Sensor Irradiation Damage","authors":"Xiaoliang Li, Pengwei Li, Qingkui Yu, Lei Luo, B. Mei","doi":"10.1109/ICREED.2018.8905073","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905073","url":null,"abstract":"The CMOS sensor in space optical communication system may generate irradiation-induced noise, leading to deviation of image centroid. Based on test data, simulated defect spots have been used for calculating the value by grey-level centroid algorithm. It shows that both the amount and position of defect pixels contribute to deviation of image centroid and the accuracy decreasing.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125996254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Threshold Voltage Degradation of MOSFET in Heavy-ion Single Event Effect Test 重离子单事件效应试验中MOSFET的阈值电压退化
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905067
Zeming Zhang, Yingqi Ma, Dan Li, Chao Tong, Xiaoxiao Guo, Jianwei Han, W. Dang
{"title":"The Threshold Voltage Degradation of MOSFET in Heavy-ion Single Event Effect Test","authors":"Zeming Zhang, Yingqi Ma, Dan Li, Chao Tong, Xiaoxiao Guo, Jianwei Han, W. Dang","doi":"10.1109/ICREED.2018.8905067","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905067","url":null,"abstract":"A degradation is studied that the gate-source threshold voltage of BSS138BK N-channel MOSFET decreased dramatically in heavy-ion single event effect test. The comparative study is performed by laser test, total ionizing dose test and no-irradiation room temperature test. This case study illustrate the parameter degradation process, comparative test results and the analysis.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114032202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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