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2018 International Conference on Radiation Effects of Electronic Devices (ICREED)最新文献

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Development of SPICE Compact Model of Neutron Displacement Effects in Lateral PNP Bipolar Transistor 侧边PNP双极晶体管中子位移效应SPICE紧凑模型的建立
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905085
Chenhui Wang, L. Ding, Wei Chen, Shanchao Yang, Chao Qi, Xiaoqiang Guo
{"title":"Development of SPICE Compact Model of Neutron Displacement Effects in Lateral PNP Bipolar Transistor","authors":"Chenhui Wang, L. Ding, Wei Chen, Shanchao Yang, Chao Qi, Xiaoqiang Guo","doi":"10.1109/ICREED.2018.8905085","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905085","url":null,"abstract":"The Gummel-Poon SPICE model of neutron displacement effects under different neutron fluence in lateral PNP bipolar transistor was developed. The RMS error between SPICE simulation results and experimental results of neutron displacement degradation is less than 9.2%.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116905488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Method for Strengthening The Total Ionizing Dose of 0.18μm Bulk CMOS process 一种增强0.18μm块体CMOS工艺总电离剂量的方法
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905080
Jianwei Wu, Zongguang Yu, G. Hong, R. Xie
{"title":"A Method for Strengthening The Total Ionizing Dose of 0.18μm Bulk CMOS process","authors":"Jianwei Wu, Zongguang Yu, G. Hong, R. Xie","doi":"10.1109/ICREED.2018.8905080","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905080","url":null,"abstract":"The total dose radiation will cause the STI parasitic device and the field isolation leakage current in the silicon device to increase the power consumption and function loss of the integrated circuit. In this paper, a RHBP(radiation hard by process) hardness method of using ion implanted P type impurity to improve the silicon surface doping concentration of the total dose sensitive device is proposed. The edged NMOS device can tolerate more than 300k Rad (Si) total dose radiation, and the electrical parameters of the device are consistent with the commercial 0.18μm bulk CMOS process.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125823205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Experimental verification of SEU monitor with heavy ions 重离子SEU监测仪的实验验证
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905089
Hua Bai, Zhengyu Zhong, Guoqiang Feng, Xupeng Sun, Tong Di, Dongmei Chen, Hui Yang, Jie Liu, G. Guo
{"title":"Experimental verification of SEU monitor with heavy ions","authors":"Hua Bai, Zhengyu Zhong, Guoqiang Feng, Xupeng Sun, Tong Di, Dongmei Chen, Hui Yang, Jie Liu, G. Guo","doi":"10.1109/ICREED.2018.8905089","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905089","url":null,"abstract":"The SEU monitor has been designed based on SRAM AT68166HT as a detector in our work. Static single event upset characterization of the Atmel AT68166HT SRAM using HI-13 heavy ion accelerator was presented. The SEU cross sections were fitted as a function of effective LETs. The different incident angle tests have been carried out to expand the effective LET range from 0.44 to 131.2MeV.cm2/mg. The fitting curve error in knee region was analyzed. It was shown that the SEU monitor could be used to check the heavy ion beam quality on test sites.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122185077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Failure Probability Analysis of Two Novel Redundant Transistor Structures 两种新型冗余晶体管结构的失效概率分析
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905109
Xin Liu, Lei Xie, L. Zhong, Guoping Xiao
{"title":"Failure Probability Analysis of Two Novel Redundant Transistor Structures","authors":"Xin Liu, Lei Xie, L. Zhong, Guoping Xiao","doi":"10.1109/ICREED.2018.8905109","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905109","url":null,"abstract":"As Moore’s Law scaling down to nanometer era, process variability, transistor defects and space radiation effects have made hard errors much more common than ever before. Unlike soft errors, hard errors can do permanent damage to integrated circuits. This paper analyzes the failure probabilities of several redundant transistor structures in detail. Massive simulations and calculations indicate the proposed structures shows advantages in area, power consumption and reliability compared with former designs, especially when the incidences of two types of transistor faults are unequal. Besides, this paper gives the failure probability of a NAND gate, described by the probability of a defective transistor. The deduced formula reveals a nonlinear relation between failure probability of a NAND gate and that of a transistor.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130103986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Method For Evaluating Three-dimensional Total Dose Effects Based On Structure Surface Cloud Picture 基于结构面云图的三维总剂量效应评价方法
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905049
Z.X. Gao, J. Yi, J. Sun, Y.L. Wang, Y.L. Zhang
{"title":"Method For Evaluating Three-dimensional Total Dose Effects Based On Structure Surface Cloud Picture","authors":"Z.X. Gao, J. Yi, J. Sun, Y.L. Wang, Y.L. Zhang","doi":"10.1109/ICREED.2018.8905049","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905049","url":null,"abstract":"A new method of evaluating Shielding Thicknesses and radiation dose based on structure surface cloud picture is proposed in this paper. The principle, process and analysis character of this method are introduced. An aircraft structure model is analyzed contrasting with one-dimensional pattern. This method can be used for evaluating total dose effects of complicated structure aircraft quickly, and the display effect of this method is direct.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"247 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127691453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An FPGA-based SRAM Single Event Multiple-bit Upset Detection Method 基于fpga的SRAM单事件多比特干扰检测方法
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905086
Wang He, Zhang Liang, Wang Yue, Yu Qingkui
{"title":"An FPGA-based SRAM Single Event Multiple-bit Upset Detection Method","authors":"Wang He, Zhang Liang, Wang Yue, Yu Qingkui","doi":"10.1109/ICREED.2018.8905086","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905086","url":null,"abstract":"This paper analyzes the designing of the existing SRAM single event upset (SEU) detection system and points out that the upset statistical method based on PC software is the system performance bottleneck. The paper aims at the bottleneck and presents a single event multiple-bit upset (MBU) detection system based on FPGA logic circuit, which has high detection speed, high data integrity, etc.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124579919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on the Transient Ionization Radiation Damage Pattern of 0.18μm SRAM 0.18μm SRAM瞬态电离辐射损伤模式研究
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905069
L. Junlin, Chen Wei, Wang Guizhen, Li Ruibin, Yang Shanchao, W. Chenhui, Qi Chao, Liu Yan
{"title":"Study on the Transient Ionization Radiation Damage Pattern of 0.18μm SRAM","authors":"L. Junlin, Chen Wei, Wang Guizhen, Li Ruibin, Yang Shanchao, W. Chenhui, Qi Chao, Liu Yan","doi":"10.1109/ICREED.2018.8905069","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905069","url":null,"abstract":"Transient ionization radiation experiment is carried out with the \"Qiang Guang-I\" accelerator in Northwest Institute of Nuclear Technology to investigate the dose rate damage pattern of 0.18μm SRAM (Static Random Access Memory). The experiment result shows that the transient ionization radiation damage pattern of 0.18μm SRAM (static random access memory) is mainly because of the photocurrent generated in memory cell flowing into the power bus which reduces core voltage of memory cell during transient radiation. Spice is also used to demonstrate the reliability between the transient ionization radiation sensitivity and the reduction of core voltage which can reduce the static noise margin of the SRAM memory cell.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117306472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Study on the Key Influencing Factors of Single-Event-Upset Sensitivity in 65nm CMOS Sequencing Logic Circuit 影响65nm CMOS顺序逻辑电路单事件干扰灵敏度的关键因素研究
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905066
Li Sai, Chen Rui, Han Jianwei, Ma Yingqi, Shangguan Shipeng, Zhu Xiang, Li Yue
{"title":"Study on the Key Influencing Factors of Single-Event-Upset Sensitivity in 65nm CMOS Sequencing Logic Circuit","authors":"Li Sai, Chen Rui, Han Jianwei, Ma Yingqi, Shangguan Shipeng, Zhu Xiang, Li Yue","doi":"10.1109/ICREED.2018.8905066","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905066","url":null,"abstract":"Single-event-upset (SEU) sensitivity of sequencing logic circuits (D flip-flops) fabricated in 65-nm bulk CMOS process is investigated as a function of operating pattern, clock frequency, supply voltage and circuit structure by using pulsed laser.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"205 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124596872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bias Effects on Power MOSFET in Total Dose Irradiation 全剂量辐照下功率MOSFET的偏置效应
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905082
Xiaoping Zhou, Ping Luo, Linyan He, Tianchen Xiao
{"title":"Bias Effects on Power MOSFET in Total Dose Irradiation","authors":"Xiaoping Zhou, Ping Luo, Linyan He, Tianchen Xiao","doi":"10.1109/ICREED.2018.8905082","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905082","url":null,"abstract":"In this paper, relationships between bias and total ionizing dose (TID) effects are studied. 40V NLDMOS and 5V NMOS are designed and fabricated in 0.35μm commercial BCD process. Co-60 gamma irradiation and test are carried out under different configurations to compare the degradation, and find out the worst-case bias.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124701425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research of Radiation Effect on DC/DC Buck Converter under High Dose Rate 高剂量率下DC/DC降压变换器的辐射效应研究
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905055
Zhong Cong, Hao Chen, Hui Wang, Shengyang Xiong, Jianghai Tao, Xiong-Hui Lin, Wei Zhang, Chunhui Jia, Zhanbo Li
{"title":"Research of Radiation Effect on DC/DC Buck Converter under High Dose Rate","authors":"Zhong Cong, Hao Chen, Hui Wang, Shengyang Xiong, Jianghai Tao, Xiong-Hui Lin, Wei Zhang, Chunhui Jia, Zhanbo Li","doi":"10.1109/ICREED.2018.8905055","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905055","url":null,"abstract":"DC/DC Buck Converters were exposed under high dose rate radiation, whose key parameters were recorded and analyzed by a appropriative test system. The results showed that the input current of the DC/DC Buck Converters increased with radiation dose, and there would be a fatal failure when the input current increase sharply. It was found that the VDMOS is the key causation for the abnormal phenomena. It is concluded that when the input voltage was fixed, a heavy load could lead a failure more easily, analogous, when the load was fixed, a high input voltage could lead to a failure more easily.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128592629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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