Development of SPICE Compact Model of Neutron Displacement Effects in Lateral PNP Bipolar Transistor

2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI:10.1109/ICREED.2018.8905085

Chenhui Wang, L. Ding, Wei Chen, Shanchao Yang, Chao Qi, Xiaoqiang Guo

引用次数: 1

Abstract

The Gummel-Poon SPICE model of neutron displacement effects under different neutron fluence in lateral PNP bipolar transistor was developed. The RMS error between SPICE simulation results and experimental results of neutron displacement degradation is less than 9.2%.

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侧边PNP双极晶体管中子位移效应SPICE紧凑模型的建立

建立了横向PNP双极晶体管不同中子通量下中子位移效应的Gummel-Poon SPICE模型。SPICE模拟结果与中子位移退化实验结果的均方根误差小于9.2%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 International Conference on Radiation Effects of Electronic Devices (ICREED)

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